Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLB8721PBF

Таблицы данных

IRLB8721PBF

IRLB8721PBF

MOSFET N-CH 30V 62A TO220AB

Infineon Technologies

2570 1.24
- +

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Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 8.7mOhm @ 31A, 10V 2.35V @ 25µA 13 nC @ 4.5 V ±20V 1077 pF @ 15 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z34STRLPBF

Таблицы данных

IRF9Z34STRLPBF

IRF9Z34STRLPBF

MOSFET P-CH 60V 18A D2PAK

Vishay Siliconix

2884 2.09
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR680ADP-T1-RE3

Таблицы данных

SIR680ADP-T1-RE3

SIR680ADP-T1-RE3

MOSFET N-CH 80V 30.7A/125A PPAK

Vishay Siliconix

2713 2.45
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 30.7A (Ta), 125A (Tc) 7.5V, 10V 2.88mOhm @ 20A, 10V 3.5V @ 250µA 83 nC @ 10 V ±20V 4415 pF @ 40 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN008-75B,118

Таблицы данных

PSMN008-75B,118

PSMN008-75B,118

MOSFET N-CH 75V 75A D2PAK

Nexperia USA Inc.

3502 2.11
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 8.5mOhm @ 25A, 10V 4V @ 1mA 122.8 nC @ 10 V ±20V 5260 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STD80N10F7

Таблицы данных

STD80N10F7

STD80N10F7

MOSFET N-CH 100V 70A DPAK

STMicroelectronics

2911 2.34
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® DeepGATE™, STripFET™ VII Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 10V 10mOhm @ 40A, 10V 4.5V @ 250µA 45 nC @ 10 V ±20V 3100 pF @ 50 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ZVP4424A

Таблицы данных

ZVP4424A

ZVP4424A

MOSFET P-CH 240V 200MA TO92-3

Diodes Incorporated

2418 1.27
- +

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Bulk - Active P-Channel MOSFET (Metal Oxide) 240 V 200mA (Ta) 3.5V, 10V 9Ohm @ 200mA, 10V 2V @ 1mA - ±40V 200 pF @ 25 V - 750mW (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFR9120TRLPBF-BE3 IRFR9120TRLPBF-BE3

IRFR9120TRLPBF-BE3

MOSFET P-CH 100V 5.6A DPAK

Vishay Siliconix

2229 1.72
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 600mOhm @ 3.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STD120N4LF6

Таблицы данных

STD120N4LF6

STD120N4LF6

MOSFET N-CH 40V 80A DPAK

STMicroelectronics

3358 2.36
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, DeepGATE™, STripFET™ VI Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 5V, 10V 4mOhm @ 40A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 4300 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ4182EY-T1_GE3

Таблицы данных

SQ4182EY-T1_GE3

SQ4182EY-T1_GE3

MOSFET N-CHANNEL 30V 32A 8SOIC

Vishay Siliconix

3534 1.72
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 32A (Tc) 4.5V, 10V 3.8mOhm @ 14A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 5400 pF @ 15 V - 7.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD100N04S402ATMA1

Таблицы данных

IPD100N04S402ATMA1

IPD100N04S402ATMA1

MOSFET N-CH 40V 100A TO252-3

Infineon Technologies

3595 2.60
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2mOhm @ 100A, 10V 4V @ 95µA 118 nC @ 10 V ±20V 9430 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD65R380E6ATMA1

Таблицы данных

IPD65R380E6ATMA1

IPD65R380E6ATMA1

MOSFET N-CH 650V 10.6A TO252-3

Infineon Technologies

2493 2.61
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ E6 Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN4R6-60BS,118

Таблицы данных

PSMN4R6-60BS,118

PSMN4R6-60BS,118

MOSFET N-CH 60V 100A D2PAK

Nexperia USA Inc.

3373 2.18
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 4.4mOhm @ 25A, 10V 4V @ 1mA 70.8 nC @ 10 V ±20V 4426 pF @ 30 V - 211W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50P03P4L11ATMA1

Таблицы данных

IPD50P03P4L11ATMA1

IPD50P03P4L11ATMA1

MOSFET P-CH 30V 50A TO252-3

Infineon Technologies

2500 1.79
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 10.5mOhm @ 50A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90N06S404ATMA2

Таблицы данных

IPD90N06S404ATMA2

IPD90N06S404ATMA2

MOSFET N-CH 60V 90A TO252-31

Infineon Technologies

2079 1.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 3.8mOhm @ 90A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK55S10N1,LQ

Таблицы данных

TK55S10N1,LQ

TK55S10N1,LQ

MOSFET N-CH 100V 55A DPAK

Toshiba Semiconductor and Storage

2277 2.83
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Ta) 10V 6.5mOhm @ 27.5A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3280 pF @ 10 V - 157W (Tc) 175°C (TJ) Surface Mount
TN0110N3-G

Таблицы данных

TN0110N3-G

TN0110N3-G

MOSFET N-CH 100V 350MA TO92-3

Microchip Technology

364 1.31
- +

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Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 350mA (Tj) 4.5V, 10V 3Ohm @ 500mA, 10V 2V @ 500µA - ±20V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7458TRPBF

Таблицы данных

IRF7458TRPBF

IRF7458TRPBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies

3148 1.81
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 10V, 16V 8mOhm @ 14A, 16V 4V @ 250µA 59 nC @ 10 V ±30V 2410 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU7546PBF

Таблицы данных

IRFU7546PBF

IRFU7546PBF

MOSFET N-CH 60V 56A IPAK

Infineon Technologies

2884 1.32
- +

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Tube HEXFET®, StrongIRFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 6V, 10V 7.9mOhm @ 43A, 10V 3.7V @ 100µA 87 nC @ 10 V ±20V 3020 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
TN2540N8-G

Таблицы данных

TN2540N8-G

TN2540N8-G

MOSFET N-CH 400V 260MA TO243AA

Microchip Technology

2911 1.74
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 400 V 260mA (Tj) 4.5V, 10V 12Ohm @ 500mA, 10V 2V @ 1mA - ±20V 125 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIDR680ADP-T1-RE3 SIDR680ADP-T1-RE3

SIDR680ADP-T1-RE3

MOSFET N-CH 80V 30.7A/137A PPAK

Vishay Siliconix

3111 2.61
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 30.7A (Ta), 137A (Tc) 7.5V, 10V 2.88mOhm @ 20A, 10V 3.5V @ 250µA 83 nC @ 10 V ±20V 4415 pF @ 40 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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