Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
|
IPD530N15N3GATMA1MOSFET N-CH 150V 21A TO252-3 |
3643 | 1.87 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 8V, 10V | 53mOhm @ 18A, 10V | 4V @ 35µA | 12 nC @ 10 V | ±20V | 887 pF @ 75 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
BSZ070N08LS5ATMA1MOSFET N-CH 80V 40A TSDSON |
2223 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 40A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.3V @ 36µA | 5 nC @ 4.5 V | ±20V | 2340 pF @ 40 V | Standard | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
FQU11P06TUMOSFET P-CH 60V 9.4A IPAK |
2185 | 0.93 |
ДобавитьРасследования |
Tube | QFET® | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 60 V | 9.4A (Tc) | 10V | 185mOhm @ 4.7A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±30V | 550 pF @ 25 V | - | 2.5W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
FDD6685MOSFET P-CH 30V 11A/40A TO252 |
10000 | 1.33 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 40A (Tc) | 4.5V, 10V | 20mOhm @ 11A, 10V | 3V @ 250µA | 24 nC @ 5 V | ±25V | 1715 pF @ 15 V | - | 52W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
SI7469ADP-T1-RE3MOSFET P-CH 80V 7.4A/46A PPAK |
2257 | 1.84 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 7.4A (Ta), 46A (Tc) | - | 19.3mOhm @ 10A, 10V | 2.6V @ 250µA | 65 nC @ 10 V | ±20V | 3420 pF @ 40 V | - | 5W (Ta), 73.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
SI4850EY-T1-E3MOSFET N-CH 60V 6A 8SO |
2732 | 1.85 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4.5V, 10V | 22mOhm @ 6A, 10V | 3V @ 250µA | 27 nC @ 10 V | ±20V | - | - | 1.7W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
SIRA02DP-T1-GE3MOSFET N-CH 30V 50A PPAK SO-8 |
2887 | 1.85 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 2mOhm @ 15A, 10V | 2.2V @ 250µA | 117 nC @ 10 V | +20V, -16V | 6150 pF @ 15 V | - | 5W (Ta), 71.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
.jpg)
|
CSD25404Q3TMOSFET P-CH 20V 104A 8VSON |
2239 | 1.44 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | NexFET™ | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 104A (Tc) | 1.8V, 4.5V | 6.5mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1 nC @ 4.5 V | ±12V | 2120 pF @ 10 V | - | 2.8W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
NP90N055VUK-E1-AYMOSFET N-CH 55V 90A TO252-3 |
2536 | 1.83 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 90A (Tc) | 10V | 3.85mOhm @ 45A, 5V | 4V @ 250µA | 102 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 1.2W (Ta), 147W (Tc) | 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
CSD17303Q5MOSFET N-CH 30V 32A/100A 8VSON |
3961 | 1.92 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 100A (Tc) | 3V, 8V | 2.4mOhm @ 25A, 8V | 1.6V @ 250µA | 23 nC @ 4.5 V | +10V, -8V | 3420 pF @ 15 V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
;;2.jpg)
|
STD80N4F6MOSFET N-CH 40V 80A DPAK |
2199 | 1.76 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 6mOhm @ 40A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±20V | 2150 pF @ 25 V | - | 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
BSZ0501NSIATMA1MOSFET N-CH 30V 25A/40A TSDSON |
3946 | 1.92 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 20A, 10V | 2V @ 250µA | 33 nC @ 10 V | ±20V | 2000 pF @ 15 V | - | 2.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
ZVP2106AMOSFET P-CH 60V 280MA TO92-3 |
3110 | 0.95 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 280mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 100 pF @ 18 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
BS250PMOSFET P-CH 45V 230MA E-LINE |
2955 | 0.95 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 45 V | 230mA (Ta) | 10V | 14Ohm @ 200mA, 10V | 3.5V @ 1mA | - | ±20V | 60 pF @ 10 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
CSD16327Q3TMOSFET N-CH 25V 60A 8VSON |
3444 | 1.46 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 60A (Tc) | 3V, 8V | 4mOhm @ 24A, 8V | 1.4V @ 250µA | 8.4 nC @ 4.5 V | +10V, -8V | 1300 pF @ 12.5 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
CSD16407Q5MOSFET N-CH 25V 31A/100A 8VSON |
2357 | 1.93 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 31A (Ta), 100A (Tc) | 4.5V, 10V | 2.4mOhm @ 25A, 10V | 1.9V @ 250µA | 18 nC @ 4.5 V | +16V, -12V | 2660 pF @ 12.5 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IPD60R360P7ATMA1MOSFET N-CH 600V 9A TO252-3 |
3451 | 1.93 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13 nC @ 10 V | ±20V | 555 pF @ 400 V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRLZ44NSTRLPBFMOSFET N-CH 55V 47A D2PAK |
1590 | 1.66 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 47A (Tc) | 4V, 10V | 22mOhm @ 25A, 10V | 2V @ 250µA | 48 nC @ 5 V | ±16V | 1700 pF @ 25 V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
SIR626LDP-T1-RE3MOSFET N-CH 60V 45.6A/186A PPAK |
2183 | 1.88 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45.6A (Ta), 186A (Tc) | 4.5V, 10V | 1.5mOhm @ 20A, 10V | 2.5V @ 250µA | 135 nC @ 10 V | ±20V | 5900 pF @ 30 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
SIR180DP-T1-RE3MOSFET N-CH 60V 32.4A/60A PPAK |
2563 | 1.88 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 32.4A (Ta), 60A (Tc) | 7.5V, 10V | 2.05mOhm @ 10A, 10V | 3.6V @ 250µA | 87 nC @ 10 V | ±20V | 4030 pF @ 30 V | - | 5.4W (Ta), 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
Запрос котировок
