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Регистрация| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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SI4838BDY-T1-GE3MOSFET N-CH 12V 34A 8SO |
2011 | 1.71 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 34A (Tc) | 1.8V, 4.5V | 2.7mOhm @ 15A, 4.5V | 1V @ 250µA | 84 nC @ 4.5 V | ±8V | 5760 pF @ 6 V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI4136DY-T1-GE3MOSFET N-CH 20V 46A 8SO |
3356 | 1.71 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 46A (Tc) | 4.5V, 10V | 2mOhm @ 15A, 10V | 2.2V @ 250µA | 110 nC @ 10 V | ±20V | 4560 pF @ 10 V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPN95R1K2P7ATMA1MOSFET N-CH 950V 6A SOT223 |
2748 | 1.76 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 6A (Tc) | 10V | 1.2Ohm @ 2.7A, 10V | 3.5V @ 140µA | 15 nC @ 10 V | ±20V | 478 pF @ 400 V | - | 7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7820TRPBFMOSFET N CH 200V 3.7A 8-SO |
3671 | 1.76 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.7A (Ta) | 10V | 78mOhm @ 2.2A, 10V | 5V @ 100µA | 44 nC @ 10 V | ±20V | 1750 pF @ 100 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN1R5-30YLC,115MOSFET N-CH 30V 100A LFPAK56 |
2950 | 1.71 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 1.55mOhm @ 25A, 10V | 1.95V @ 1mA | 65 nC @ 10 V | ±20V | 4044 pF @ 15 V | - | 179W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NVMYS7D3N04CLTWGMOSFET N-CH 40V 17A/52A 4LFPAK |
2114 | 1.70 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 17A (Ta), 52A (Tc) | 4.5V, 10V | 7.3mOhm @ 10A, 10V | 2V @ 30µA | 1.8 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 3.8W (Ta), 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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ZVN2110AMOSFET N-CH 100V 320MA TO92-3 |
3554 | 0.78 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 320mA (Ta) | 10V | 4Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 75 pF @ 25 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPN80R2K4P7ATMA1MOSFET N-CH 800V 2.5A SOT223 |
3428 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.5A (Tc) | 10V | 2.4Ohm @ 800mA, 10V | 3.5V @ 40µA | 7.5 nC @ 10 V | ±20V | 150 pF @ 500 V | - | 6.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TSM680P06CP ROGMOSFET P-CHANNEL 60V 18A TO252 |
2477 | 1.69 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 68mOhm @ 6A, 10V | 2.2V @ 250µA | 16.4 nC @ 10 V | ±20V | 870 pF @ 30 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIJ478DP-T1-GE3MOSFET N-CH 80V 60A PPAK SO-8 |
2103 | 1.72 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 60A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.6V @ 250µA | 54 nC @ 10 V | ±20V | 1855 pF @ 40 V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SQJ138EP-T1_GE3MOSFET N-CH 40V 330A PPAK SO-8 |
3081 | 1.72 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 330A (Tc) | 10V | 1.8mOhm @ 15A, 10V | 3.5V @ 250µA | 81 nC @ 10 V | ±20V | 4715 pF @ 25 V | - | 312W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BSC065N06LS5ATMA1MOSFET N-CHANNEL 60V 64A 8TDSON |
3099 | 1.77 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 64A (Tc) | 4.5V, 10V | 6.5mOhm @ 32A, 10V | 2.3V @ 20µA | 13 nC @ 4.5 V | ±20V | 1800 pF @ 30 V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI4455DY-T1-GE3MOSFET P-CH 150V 2A 8SO |
2354 | 1.72 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 2A (Ta) | 6V, 10V | 295mOhm @ 4A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±20V | 1190 pF @ 50 V | - | 5.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SQD40031EL_GE3MOSFET P-CH 30V 100A TO252AA |
2251 | 1.72 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 30A, 10V | 2.5V @ 250µA | 280 nC @ 10 V | ±20V | 15000 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SQD40061EL_GE3MOSFET P-CH 40V 100A TO252AA |
3958 | 1.72 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 5.1mOhm @ 30A, 10V | 2.5V @ 250µA | 280 nC @ 10 V | ±20V | 14500 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SQD10N30-330H_GE3MOSFET N-CH 300V 10A TO252AA |
3036 | 1.72 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 10A (Tc) | 10V | 330mOhm @ 14A, 10V | 4.4V @ 250µA | 47 nC @ 10 V | ±30V | 2190 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SQ4153EY-T1_BE3MOSFET P-CHANNEL 12V 25A 8SOIC |
3306 | 1.72 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 25A (Tc) | 1.8V, 4.5V | 8.32mOhm @ 14A, 4.5V | 900mV @ 250µA | 151 nC @ 4.5 V | ±8V | 11000 pF @ 6 V | - | 7.1W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SI4427BDY-T1-E3MOSFET P-CH 30V 9.7A 8SO |
3424 | 1.73 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 9.7A (Ta) | 2.5V, 10V | 10.5mOhm @ 12.6A, 10V | 1.4V @ 250µA | 70 nC @ 4.5 V | ±12V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NVMYS025N06CLTWGMOSFET N-CH 60V 8.5A/21A 4LFPAK |
3203 | 1.73 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8.5A (Ta), 21A (Tc) | 4.5V, 10V | 27.5mOhm @ 7.5A, 10V | 2V @ 13µA | 5.8 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 3.8W (Ta), 24W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BSZ12DN20NS3GATMA1MOSFET N-CH 200V 11.3A 8TSDSON |
3741 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 11.3A (Tc) | 10V | 125mOhm @ 5.7A, 10V | 4V @ 25µA | 8.7 nC @ 10 V | ±20V | 680 pF @ 100 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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