Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDS3692

Таблицы данных

FDS3692

FDS3692

MOSFET N-CH 100V 4.5A 8SOIC

onsemi

2127 1.07
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Ta) 6V, 10V 60mOhm @ 4.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 746 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQD17P06TM

Таблицы данных

FQD17P06TM

FQD17P06TM

MOSFET P-CH 60V 12A DPAK

onsemi

3404 1.08
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 135mOhm @ 6A, 10V 4V @ 250µA 27 nC @ 10 V ±25V 900 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK9Y53-100B,115

Таблицы данных

BUK9Y53-100B,115

BUK9Y53-100B,115

MOSFET N-CH 100V 23A LFPAK56

Nexperia USA Inc.

2353 1.01
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 4.5V, 10V 49mOhm @ 10A, 10V 2V @ 1mA 18 nC @ 5 V ±15V 2130 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP318SH6327XTSA1

Таблицы данных

BSP318SH6327XTSA1

BSP318SH6327XTSA1

MOSFET N-CH 60V 2.6A SOT223-4

Infineon Technologies

3385 1.01
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SIPMOS® Active N-Channel MOSFET (Metal Oxide) 60 V 2.6A (Tj) 4.5V, 10V 90mOhm @ 2.6A, 10V 2V @ 20µA 20 nC @ 10 V ±20V 380 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PSMN014-80YLX

Таблицы данных

PSMN014-80YLX

PSMN014-80YLX

MOSFET N-CH 80V 62A LFPAK56

Nexperia USA Inc.

3865 1.01
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 80 V 62A (Tc) 5V, 10V 14mOhm @ 15A, 10V 2.1V @ 1mA 28.9 nC @ 5 V ±20V 4640 pF @ 25 V - 147W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP297H6327XTSA1

Таблицы данных

BSP297H6327XTSA1

BSP297H6327XTSA1

MOSFET N-CH 200V 660MA SOT223-4

Infineon Technologies

3169 1.02
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SIPMOS® Active N-Channel MOSFET (Metal Oxide) 200 V 660mA (Ta) 4.5V, 10V 1.8Ohm @ 660mA, 10V 1.8V @ 400µA 16.1 nC @ 10 V ±20V 357 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIS434DN-T1-GE3

Таблицы данных

SIS434DN-T1-GE3

SIS434DN-T1-GE3

MOSFET N-CH 40V 35A PPAK 1212-8

Vishay Siliconix

2253 1.02
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Tc) 4.5V, 10V 7.6mOhm @ 16.2A, 10V 2.2V @ 250µA 40 nC @ 10 V ±20V 1530 pF @ 20 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR401DP-T1-GE3

Таблицы данных

SIR401DP-T1-GE3

SIR401DP-T1-GE3

MOSFET P-CH 20V 50A PPAK SO-8

Vishay Siliconix

3758 1.02
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 2.5V, 10V 3.2mOhm @ 15A, 10V 1.5V @ 250µA 310 nC @ 10 V ±12V 9080 pF @ 10 V - 5W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM260P02CX RFG

Таблицы данных

TSM260P02CX RFG

TSM260P02CX RFG

-20V, -6.5A, SINGLE P-CHANNEL PO

Taiwan Semiconductor Corporation

2028 1.21
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 20 V 6.5A (Tc) 1.8V, 2.5V, 4.5V 26mOhm @ 5A, 4.5V 1V @ 250µA 19.5 nC @ 4.5 V ±10V 1670 pF @ 15 V Standard 1.56W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RQ3E180AJTB

Таблицы данных

RQ3E180AJTB

RQ3E180AJTB

MOSFET N-CH 30V 18A/30A 8HSMT

Rohm Semiconductor

2869 1.21
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 30A (Tc) 2.5V, 4.5V 4.5mOhm @ 18A, 4.5V 1.5V @ 11mA 39 nC @ 4.5 V ±12V 4290 pF @ 15 V - 2W (Ta), 30W (Tc) 150°C (TJ) Surface Mount
RD3L01BATTL1

Таблицы данных

RD3L01BATTL1

RD3L01BATTL1

PCH -60V -10A POWER MOSFET - RD3

Rohm Semiconductor

2261 1.21
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 60 V 10A (Ta) 4.5V, 10V 84mOhm @ 10A, 10V 2.5V @ 1mA 15.2 nC @ 10 V ±20V 1200 pF @ 30 V - 26W (Ta) 150°C (TJ) Surface Mount
PSMN2R4-30YLDX

Таблицы данных

PSMN2R4-30YLDX

PSMN2R4-30YLDX

MOSFET N-CH 30V 100A LFPAK56

Nexperia USA Inc.

2697 1.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 2.4mOhm @ 25A, 10V 2.2V @ 1mA 31.3 nC @ 10 V ±20V 2256 pF @ 15 V - 106W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK6R9P08QM,RQ

Таблицы данных

TK6R9P08QM,RQ

TK6R9P08QM,RQ

UMOS10 DPAK 80V 6.9MOHM

Toshiba Semiconductor and Storage

2701 1.09
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 62A (Tc) 6V, 10V 6.9mOhm @ 31A, 10V 3.5V @ 500µA 39 nC @ 10 V ±20V 2700 pF @ 40 V - 89W (Tc) 175°C Surface Mount
CSD17310Q5A

Таблицы данных

CSD17310Q5A

CSD17310Q5A

MOSFET N-CH 30V 21A/100A 8VSON

Texas Instruments

211326 1.05
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk NexFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 100A (Tc) 3V, 8V 5.1mOhm @ 20A, 8V 1.8V @ 250µA 11.6 nC @ 4.5 V +10V, -8V 1560 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQJ416EP-T1_GE3

Таблицы данных

SQJ416EP-T1_GE3

SQJ416EP-T1_GE3

MOSFET N-CH 100V 27A PPAK SO-8

Vishay Siliconix

3415 1.03
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 27A (Tc) 10V 30mOhm @ 10A, 10V 3.5V @ 250µA 20 nC @ 10 V ±20V 800 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJA00EP-T1_GE3

Таблицы данных

SQJA00EP-T1_GE3

SQJA00EP-T1_GE3

MOSFET N-CH 60V 30A PPAK SO-8

Vishay Siliconix

2974 1.03
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 13mOhm @ 10A, 10V 3.5V @ 250µA 35 nC @ 10 V ±20V 1700 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ZVN4206GTA

Таблицы данных

ZVN4206GTA

ZVN4206GTA

MOSFET N-CH 60V 1A SOT223

Diodes Incorporated

2622 1.03
- +

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 1A (Ta) 5V, 10V 1Ohm @ 1.5A, 10V 3V @ 1mA - ±20V 100 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP317PH6327XTSA1

Таблицы данных

BSP317PH6327XTSA1

BSP317PH6327XTSA1

MOSFET P-CH 250V 430MA SOT223-4

Infineon Technologies

2187 1.10
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, SIPMOS® Active P-Channel MOSFET (Metal Oxide) 250 V 430mA (Ta) 4.5V, 10V 4Ohm @ 430mA, 10V 2V @ 370µA 15.1 nC @ 10 V ±20V 262 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP315PH6327XTSA1

Таблицы данных

BSP315PH6327XTSA1

BSP315PH6327XTSA1

MOSFET P-CH 60V 1.17A SOT223-4

Infineon Technologies

3072 1.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 1.17A (Ta) 4.5V, 10V 800mOhm @ 1.17A, 10V 2V @ 160µA 7.8 nC @ 10 V ±20V 160 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD70R600P7SAUMA1

Таблицы данных

IPD70R600P7SAUMA1

IPD70R600P7SAUMA1

MOSFET N-CH 700V 8.5A TO252-3

Infineon Technologies

2797 1.06
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tc) 10V 600mOhm @ 1.8A, 10V 3.5V @ 90µA 10.5 nC @ 10 V ±16V 364 pF @ 400 V - 43W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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