Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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DN3545N8-GMOSFET N-CH 450V 200MA TO243AA |
3020 | 1.03 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 200mA (Ta) | 0V | 20Ohm @ 150mA, 0V | - | - | ±20V | 360 pF @ 25 V | Depletion Mode | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BSC12DN20NS3GATMA1MOSFET N-CH 200V 11.3A 8TDSON |
3465 | 1.78 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 11.3A (Tc) | 10V | 125mOhm @ 5.7A, 10V | 4V @ 25µA | 8.7 nC @ 10 V | ±20V | 680 pF @ 100 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BSP135H6327XTSA1MOSFET N-CH 600V 120MA SOT223-4 |
2269 | 1.74 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SIPMOS® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9 nC @ 5 V | ±20V | 146 pF @ 25 V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI7113DN-T1-GE3MOSFET P-CH 100V 13.2A PPAK |
2948 | 1.74 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 13.2A (Tc) | 4.5V, 10V | 134mOhm @ 4A, 10V | 3V @ 250µA | 55 nC @ 10 V | ±20V | 1480 pF @ 50 V | - | 3.7W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI4840BDY-T1-GE3MOSFET N-CH 40V 19A 8SO |
3931 | 1.74 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 19A (Tc) | 4.5V, 10V | 9mOhm @ 12.4A, 10V | 3V @ 250µA | 50 nC @ 10 V | ±20V | 2000 pF @ 20 V | - | 2.5W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR9310TRPBFMOSFET P-CH 400V 1.8A DPAK |
2814 | 1.76 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 400 V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7425TRPBFMOSFET P-CH 20V 15A 8SO |
2277 | 1.81 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 15A (Ta) | 2.5V, 4.5V | 8.2mOhm @ 15A, 4.5V | 1.2V @ 250µA | 130 nC @ 4.5 V | ±12V | 7980 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SISS26DN-T1-GE3MOSFET N-CH 60V 60A PPAK1212-8S |
2944 | 1.76 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 6V, 10V | 4.5mOhm @ 15A, 10V | 3.6V @ 250µA | 37 nC @ 10 V | ±20V | 1710 pF @ 30 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDD8453LZMOSFET N-CH 40V 16.4A/50A DPAK |
3888 | 1.78 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 16.4A (Ta), 50A (Tc) | 4.5V, 10V | 6.7mOhm @ 15A, 10V | 3V @ 250µA | 64 nC @ 10 V | ±20V | 3515 pF @ 20 V | - | 3.1W (Ta), 65W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BSZ084N08NS5ATMA1MOSFET N-CH 80V 40A TSDSON |
2610 | 1.85 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 40A (Tc) | 6V, 10V | 8.4mOhm @ 20A, 10V | 3.8V @ 31µA | 25 nC @ 10 V | ±20V | 1820 pF @ 40 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI7322DN-T1-GE3MOSFET N-CH 100V 18A PPAK1212-8 |
3383 | 1.80 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Tc) | 10V | 58mOhm @ 5.5A, 10V | 4.4V @ 250µA | 20 nC @ 10 V | ±20V | 750 pF @ 50 V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN1R2-25YLC,115MOSFET N-CH 25V 100A LFPAK56 |
3084 | 1.67 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 100A (Tc) | 4.5V, 10V | 1.3mOhm @ 25A, 10V | 1.95V @ 1mA | 66 nC @ 10 V | ±20V | 4173 pF @ 12 V | - | 179W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPD80R900P7ATMA1MOSFET N-CH 800V 6A TO252-3 |
3272 | 1.86 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 900mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15 nC @ 10 V | ±20V | 350 pF @ 500 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFH7440TRPBFMOSFET N-CH 40V 85A 8PQFN |
3109 | 1.86 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 85A (Tc) | 6V, 10V | 2.4mOhm @ 50A, 10V | 3.9V @ 100µA | 138 nC @ 10 V | ±20V | 4574 pF @ 25 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI7414DN-T1-E3MOSFET N-CH 60V 5.6A PPAK1212-8 |
1968 | 1.62 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 5.6A (Ta) | 4.5V, 10V | 25mOhm @ 8.7A, 10V | 3V @ 250µA | 25 nC @ 10 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI7414DN-T1-GE3MOSFET N-CH 60V 5.6A PPAK1212-8 |
3729 | 1.62 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 5.6A (Ta) | 4.5V, 10V | 25mOhm @ 8.7A, 10V | 3V @ 250µA | 25 nC @ 10 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI7820DN-T1-GE3MOSFET N-CH 200V 1.7A PPAK1212-8 |
3319 | 1.62 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 1.7A (Ta) | 6V, 10V | 240mOhm @ 2.6A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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SISS32ADN-T1-GE3MOSFET N-CH 80V 17.4A/63A PPAK |
3406 | 1.63 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 17.4A (Ta), 63A (Tc) | 7.5V, 10V | 7.3mOhm @ 10A, 10V | 3.6V @ 250µA | 36 nC @ 10 V | ±20V | 1520 pF @ 40 V | - | 5W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AON6500MOSFET N CH 30V 71A DFN5X6 |
3072 | 1.80 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 71A (Ta), 200A (Tc) | 4.5V, 10V | 0.95mOhm @ 20A, 10V | 2V @ 250µA | 145 nC @ 10 V | ±20V | 7036 pF @ 15 V | - | 7.3W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDD86102MOSFET N-CH 100V 8A/36A DPAK |
52160 | 1.82 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8A (Ta), 36A (Tc) | 6V, 10V | 24mOhm @ 8A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 1035 pF @ 50 V | - | 3.1W (Ta), 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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