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Регистрация| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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FQPF2N50MOSFET N-CH 500V 1.3A TO220F |
1628 | 0.34 |
ДобавитьРасследования |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 1.3A (Tc) | 10V | 5.3Ohm @ 650mA, 10V | 5V @ 250µA | 8 nC @ 10 V | ±30V | 230 pF @ 25 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFD112SMALL SIGNAL N-CHANNEL MOSFET |
1371 | 0.34 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 800mA (Tc) | 10V | 800mOhm @ 800mA, 10V | 4V @ 250µA | 7 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FQD2N50TFMOSFET N-CH 500V 1.6A DPAK |
1015 | 0.34 |
ДобавитьРасследования |
Bulk | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 1.6A (Tc) | 10V | 5.3Ohm @ 800mA, 10V | 5V @ 250µA | 8 nC @ 10 V | ±30V | 230 pF @ 25 V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP065N04NGN-CHANNEL POWER MOSFET |
5952 | 0.35 |
ДобавитьРасследования |
Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 6.5mOhm @ 50A, 10V | 4V @ 200µA | 34 nC @ 10 V | ±20V | 2800 pF @ 20 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SPD50N03S2LN-CHANNEL POWER MOSFET |
1600 | 0.35 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 6.4mOhm @ 50A, 10V | 2V @ 85µA | 68 nC @ 10 V | ±20V | 2530 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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2SJ196-T-AZP-CHANNEL SMALL SIGNAL MOSFET |
9500 | 0.36 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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HUF75307T3STMOSFET N-CH 55V 2.6A SOT223-4 |
5276 | 0.36 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 2.6A (Ta) | 10V | 90mOhm @ 2.6A, 10V | 4V @ 250µA | 17 nC @ 20 V | ±20V | 250 pF @ 25 V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BSO203SPP-CHANNEL POWER MOSFET |
5216 | 0.36 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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UPA2350BT1P-E4-AN-CHANNEL POWER MOSFET |
5000 | 0.36 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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SSR2N60BN-CHANNEL POWER MOSFET |
5000 | 0.36 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.8A (Tc) | 10V | 5Ohm @ 900mA, 10V | 4V @ 250µA | 17 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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HUFA76629D3SMOSFET N-CH 100V 20A TO252AA |
4600 | 0.36 |
ДобавитьРасследования |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 4.5V, 10V | 52mOhm @ 20A, 10V | 3V @ 250µA | 46 nC @ 10 V | ±16V | 1285 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SFS9Z24P-CHANNEL POWER MOSFET |
3485 | 0.36 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 7.5A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 29W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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ISL9N310AP3N-CHANNEL POWER MOSFET |
3211 | 0.36 |
ДобавитьРасследования |
Bulk | UltraFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 62A (Tc) | 4.5V, 10V | 10Ohm @ 62A, 10A | 3V @ 250µA | 48 nC @ 10 V | ±20V | 1800 pF @ 15 V | - | 70W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFR1219AN-CHANNEL POWER MOSFET |
2500 | 0.36 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRFR91109AP-CHANNEL POWER MOSFET |
2500 | 0.36 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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IRFR321N-CHANNEL POWER MOSFET |
1802 | 0.36 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 3.1A (Ta) | 10V | 1.8Ohm @ 1.7A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RF1K49211N-CHANNEL POWER MOSFET |
1588 | 0.36 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 7A | - | - | - | - | - | - | - | - | - | Surface Mount |
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Таблицы данных |
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IRFHM4234TRPBFHEXFET POWER MOSFET |
1122 | 0.36 |
ДобавитьРасследования |
Bulk | FASTIRFET™, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 20A (Ta) | 4.5V, 10V | 4.4mOhm @ 30A, 10V | 2.1V @ 25µA | 17 nC @ 10 V | ±20V | 1011 pF @ 13 V | - | 2.8W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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2SJ278MY90TRP-CHANNEL POWER MOSFET |
1000 | 0.36 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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SSI7N60BTUN-CHANNEL POWER MOSFET |
964 | 0.36 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 1.2Ohm @ 3.5A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 3.13W (Ta), 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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