Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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IPS60R210PFD7SAKMA1MOSFET N-CH 650V 16A TO251-3 |
308 | 2.39 |
ДобавитьРасследования |
Tube | CoolMOS™PFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 16A (Tc) | 10V | 210mOhm @ 4.9A, 10V | 4.5V @ 240µA | 23 nC @ 10 V | ±20V | 1015 pF @ 400 V | - | 64W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRL630PBFMOSFET N-CH 200V 9A TO220AB |
990 | 2.46 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 4V, 5V | 400mOhm @ 5.4A, 5V | 2V @ 250µA | 40 nC @ 10 V | ±10V | 1100 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHF7N60E-E3MOSFET N-CH 600V 7A TO220 |
812 | 2.51 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±30V | 680 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPI029N06NAKSA1MOSFET N-CH 60V 24A/100A TO262-3 |
246 | 2.66 |
ДобавитьРасследования |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 24A (Ta), 100A (Tc) | 6V, 10V | 2.9mOhm @ 100A, 10V | 2.8V @ 75µA | 56 nC @ 10 V | ±20V | 4100 pF @ 30 V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPAN60R210PFD7SXKSA1MOSFET N-CH 650V 16A TO220 |
840 | 2.67 |
ДобавитьРасследования |
Tube | CoolMOS™PFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 16A (Tc) | 10V | 210mOhm @ 4.9A, 10V | 4.5V @ 240µA | 23 nC @ 10 V | ±20V | 1015 pF @ 400 V | - | 25W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FQPF27N25MOSFET N-CH 250V 14A TO220F |
1000 | 2.75 |
ДобавитьРасследования |
Tube | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 110mOhm @ 7A, 10V | 5V @ 250µA | 65 nC @ 10 V | ±30V | 2450 pF @ 25 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP9NM60NMOSFET N-CH 600V 6.5A TO220AB |
680 | 2.83 |
ДобавитьРасследования |
Tube | MDmesh™ II | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.5A (Tc) | 10V | 745mOhm @ 3.25A, 10V | 4V @ 250µA | 17.4 nC @ 10 V | ±25V | 452 pF @ 50 V | - | 70W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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STF18N65M2MOSFET N-CH 650V 12A TO220FP |
765 | 2.85 |
ДобавитьРасследования |
Tube | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 330mOhm @ 6A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±25V | 770 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK65A10N1,S4XMOSFET N-CH 100V 65A TO220SIS |
3274 | 2.93 |
ДобавитьРасследования |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 65A (Tc) | 10V | 4.8mOhm @ 32.5A, 10V | 4V @ 1mA | 81 nC @ 10 V | ±20V | 5400 pF @ 50 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |
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SIHP17N80AE-GE3MOSFET N-CH 800V 15A TO220AB |
980 | 2.95 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±30V | 1260 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCPF9N60NTMOSFET N-CH 600V 9A TO220F |
812 | 2.97 |
ДобавитьРасследования |
Tube | SuperMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 385mOhm @ 4.5A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±30V | 1240 pF @ 100 V | - | 29.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP18N50C-E3MOSFET N-CH 500V 18A TO220AB |
998 | 2.99 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 18A (Tc) | 10V | 270mOhm @ 10A, 10V | 5V @ 250µA | 76 nC @ 10 V | ±30V | 2942 pF @ 25 V | - | 223W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STP24N60M6MOSFET N-CH 600V TO220 |
732 | 3.04 |
ДобавитьРасследования |
Tube | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tj) | - | - | - | - | - | - | - | - | - | Through Hole |
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Таблицы данных |
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STP18N65M2MOSFET N-CH 650V 12A TO220 |
2088 | 3.04 |
ДобавитьРасследования |
Tube | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 330mOhm @ 6A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±25V | 770 pF @ 100 V | - | 110W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFIBE20GPBFMOSFET N-CH 800V 1.4A TO220-3 |
2713 | 3.09 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.4A (Tc) | 10V | 6.5Ohm @ 840mA, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP240N60E-GE3MOSFET N-CH 600V 12A TO220AB |
461 | 3.11 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 240mOhm @ 5.5A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 795 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STF12N65M5MOSFET N-CH 650V 8.5A TO220FP |
153 | 3.24 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.5A (Tc) | 10V | 430mOhm @ 4.3A, 10V | 5V @ 250µA | 22 nC @ 10 V | ±25V | 900 pF @ 100 V | - | 25W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP80R360P7XKSA1MOSFET N-CH 800V 13A TO220-3 |
2241 | 3.25 |
ДобавитьРасследования |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30 nC @ 10 V | ±20V | 930 pF @ 500 V | - | 84W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP12N50PMOSFET N-CH 500V 12A TO220AB |
195 | 3.81 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 500mOhm @ 6A, 10V | 5.5V @ 250µA | 29 nC @ 10 V | ±30V | 1830 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK28A65W,S5XMOSFET N-CH 650V 27.6A TO220SIS |
2582 | 5.25 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |
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