Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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TK100E08N1,S1XMOSFET N-CH 80V 100A TO220 |
2998 | 3.79 |
ДобавитьРасследования |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Ta) | 10V | 3.2mOhm @ 50A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±20V | 9000 pF @ 40 V | - | 255W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG25N40D-E3MOSFET N-CH 400V 25A TO247AC |
2877 | 3.88 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 25A (Tc) | 10V | 170mOhm @ 13A, 10V | 5V @ 250µA | 88 nC @ 10 V | ±30V | 1707 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDP023N08B-F102MOSFET N-CH 75V 120A TO220-3 |
2769 | 3.94 |
ДобавитьРасследования |
Tube,Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 2.35mOhm @ 75A, 10V | 3.8V @ 250µA | 195 nC @ 10 V | ±20V | 13765 pF @ 37.5 V | - | 245W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPP65R190C7FKSA1MOSFET N-CH 650V 13A TO220-3 |
3918 | 3.98 |
ДобавитьРасследования |
Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23 nC @ 10 V | ±20V | 1150 pF @ 400 V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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R6030KNXMOSFET N-CH 600V 30A TO220FM |
144 | 4.06 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 5V @ 1mA | 56 nC @ 10 V | ±20V | 2350 pF @ 25 V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP28N60DM2MOSFET N-CH 600V 21A TO220 |
2990 | 4.08 |
ДобавитьРасследования |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 160mOhm @ 10.5A, 10V | 5V @ 250µA | 34 nC @ 10 V | ±25V | 1500 pF @ 100 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AOTF190A60LMOSFET N-CH 600V 20A TO220F |
101 | 4.24 |
ДобавитьРасследования |
Tube | aMOS5™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 190mOhm @ 7.6A, 10V | 4.6V @ 250µA | 34 nC @ 10 V | ±20V | 1935 pF @ 100 V | Standard | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPAN80R280P7XKSA1MOSFET N-CH 800V 17A TO220 |
2562 | 4.25 |
ДобавитьРасследования |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 280mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36 nC @ 10 V | ±20V | 1200 pF @ 500 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW28N65M2MOSFET N-CH 650V 20A TO247 |
2308 | 4.48 |
ДобавитьРасследования |
Tube | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 180mOhm @ 10A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±25V | 1440 pF @ 100 V | - | 170W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP62N15PMOSFET N-CH 150V 62A TO220AB |
3440 | 4.87 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 62A (Tc) | 10V | 40mOhm @ 31A, 10V | 5.5V @ 250µA | 70 nC @ 10 V | ±20V | 2250 pF @ 25 V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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TK16J60W5,S1VQX35 PB-F POWER MOSFET TRANSISTOR |
2758 | 4.96 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 230mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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FCP13N60NMOSFET N-CH 600V 13A TO220-3 |
3828 | 4.98 |
ДобавитьРасследования |
Tube | SupreMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 258mOhm @ 6.5A, 10V | 4V @ 250µA | 39.5 nC @ 10 V | ±30V | 1765 pF @ 100 V | - | 116W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK20J60W,S1VEX35 PB-F POWER MOSFET TRANSISTOR |
2289 | 5.10 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 165W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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FQAF11N90CMOSFET N-CH 900V 7A TO3PF |
2533 | 5.31 |
ДобавитьРасследования |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 900 V | 7A (Tc) | 10V | 1.1Ohm @ 3.5A, 10V | 5V @ 250µA | 80 nC @ 10 V | ±30V | 3290 pF @ 25 V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT30F50BMOSFET N-CH 500V 30A TO247 |
2177 | 5.57 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 190mOhm @ 14A, 10V | 5V @ 1mA | 115 nC @ 10 V | ±30V | 4525 pF @ 25 V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPA60R125CFD7XKSA1MOSFET N-CH 600V 11A TO220 |
2513 | 5.77 |
ДобавитьРасследования |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36 nC @ 10 V | ±20V | 1503 pF @ 400 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH10N80PMOSFET N-CH 800V 10A TO247AD |
2104 | 5.88 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 10A (Tc) | 10V | 1.1Ohm @ 5A, 10V | 5.5V @ 2.5mA | 40 nC @ 10 V | ±30V | 2050 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP40N65M2MOSFET N-CH 650V 32A TO220 |
2458 | 6.17 |
ДобавитьРасследования |
Tube | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 99mOhm @ 16A, 10V | 4V @ 250µA | 56.5 nC @ 10 V | ±25V | 2355 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFB17N50LPBFMOSFET N-CH 500V 16A TO220AB |
2618 | 6.30 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 320mOhm @ 9.9A, 10V | 5V @ 250µA | 130 nC @ 10 V | ±30V | 2760 pF @ 25 V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK28N65W5,S1FX35 PB-F POWER MOSFET TRANSISTOR |
2719 | 6.35 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 130mOhm @ 13.8A, 10V | 4.5V @ 1.6mA | 90 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C | Through Hole |
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