Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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STP120NF10MOSFET N-CH 100V 110A TO220AB |
7580 | 5.05 |
ДобавитьРасследования |
Tube | STripFET™ II | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 10.5mOhm @ 60A, 10V | 4V @ 250µA | 233 nC @ 10 V | ±20V | 5200 pF @ 25 V | - | 312W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STW45N65M5MOSFET N-CH 650V 35A TO247 |
2412 | 9.87 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 78mOhm @ 19.5A, 10V | 5V @ 250µA | 91 nC @ 10 V | ±20V | 3375 pF @ 100 V | - | 210W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFA6N120PMOSFET N-CH 1200V 6A TO263 |
267 | 10.31 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 6A (Tc) | 10V | 2.4Ohm @ 500mA, 10V | 5V @ 1mA | 92 nC @ 10 V | ±30V | 2830 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT20M38SVRGMOSFET N-CH 200V 67A D3PAK |
2226 | 14.89 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 67A (Tc) | 10V | 38mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | ±30V | 6120 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTK180N15PMOSFET N-CH 150V 180A TO264 |
2877 | 16.10 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 180A (Tc) | 10V | 10mOhm @ 90A, 10V | 5V @ 500µA | 240 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 800W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTT140P10TMOSFET P-CH 100V 140A TO268 |
3644 | 20.25 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 10V | 12mOhm @ 70A, 10V | 4V @ 250µA | 400 nC @ 10 V | ±15V | 31400 pF @ 25 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SCT3060ARC14SICFET N-CH 650V 39A TO247-4L |
133 | 25.42 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 39A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58 nC @ 18 V | +22V, -4V | 852 pF @ 500 V | - | 165W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTN660N04T4MOSFET N-CH 40V 660A SOT227B |
2459 | 31.20 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 660A (Tc) | 10V | 0.85mOhm @ 100A, 10V | 4V @ 250µA | 860 nC @ 10 V | ±15V | 44000 pF @ 25 V | Current Sensing | 1040W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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TK100L60W,VQMOSFET N-CH 600V 100A TO3P |
3315 | 33.12 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 100A (Ta) | 10V | 18mOhm @ 50A, 10V | 3.7V @ 5mA | 360 nC @ 10 V | ±30V | 15000 pF @ 30 V | Super Junction | 797W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN60N80PMOSFET N-CH 800V 53A SOT-227B |
3149 | 40.00 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 53A (Tc) | 10V | 140mOhm @ 30A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 18000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN150N65X2MOSFET N-CH 650V 145A SOT227B |
3115 | 47.07 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 145A (Tc) | 10V | 17mOhm @ 75A, 10V | 5V @ 8mA | 355 nC @ 10 V | ±30V | 21000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTN210P10TMOSFET P-CH 100V 210A SOT227B |
3482 | 51.15 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 210A (Tc) | 10V | 7.5mOhm @ 105A, 10V | 4.5V @ 250µA | 740 nC @ 10 V | ±15V | 69500 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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SCT3030ALHRC11SICFET N-CH 650V 70A TO247N |
222 | 55.86 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 70A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | +22V, -4V | 1526 pF @ 500 V | - | 262W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTX4N300P3HVMOSFET N-CH 3000V 4A TO247PLUSHV |
2699 | 74.94 |
ДобавитьРасследования |
Tube | Polar P3™ | Active | N-Channel | MOSFET (Metal Oxide) | 3000 V | 4A (Tc) | 10V | 12.5Ohm @ 2A, 10V | 5V @ 250µA | 139 nC @ 10 V | ±20V | 3680 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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VMO580-02FMOSFET N-CH 200V 580A Y3-LI |
2129 | 169.40 |
ДобавитьРасследования |
Bulk | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 580A (Tc) | 10V | 3.8mOhm @ 430A, 10V | 4V @ 50mA | 2750 nC @ 10 V | ±20V | - | - | - | -40°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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BSM400C12P3G202SICFET N-CH 1200V 400A MODULE |
3261 | 1098.00 |
ДобавитьРасследования |
Tray | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 400A (Tc) | - | - | 5.6V @ 106.8mA | - | +22V, -4V | 17000 pF @ 10 V | - | 1570W (Tc) | 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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RJP020N06T100MOSFET N-CH 60V 2A MPT3 |
17000 | 0.95 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 2.5V, 4.5V | 240mOhm @ 2A, 4.5V | 1.5V @ 1mA | 10 nC @ 4 V | ±12V | 160 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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LND150N3-GMOSFET N-CH 500V 30MA TO92-3 |
3351 | 0.63 |
ДобавитьРасследования |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10 pF @ 25 V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AOT1N60MOSFET N-CH 600V 1.3A TO220 |
296 | 0.77 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.3A (Tc) | 10V | 9Ohm @ 650mA, 10V | 4.5V @ 250µA | 8 nC @ 10 V | ±30V | 160 pF @ 25 V | - | 41.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TN5325N3-GMOSFET N-CH 250V 215MA TO92-3 |
745 | 0.78 |
ДобавитьРасследования |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 215mA (Ta) | 4.5V, 10V | 7Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 110 pF @ 25 V | - | 740mW (Ta) | - | Through Hole |
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