Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSP89H6327XTSA1

Таблицы данных

BSP89H6327XTSA1

BSP89H6327XTSA1

MOSFET N-CH 240V 350MA SOT223-4

Infineon Technologies

1773 0.75
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SIPMOS® Active N-Channel MOSFET (Metal Oxide) 240 V 350mA (Ta) 4.5V, 10V 6Ohm @ 350mA, 10V 1.8V @ 108µA 6.4 nC @ 10 V ±20V 140 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJW7N06A-AU_R2_000A1 PJW7N06A-AU_R2_000A1

PJW7N06A-AU_R2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

1175 0.75
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 6.6A (Ta) 4.5V, 10V 34mOhm @ 6A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 1173 pF @ 25 V - 3.7W (Ta) -55°C ~ 175°C (TJ) Surface Mount
GT52N10D5

Таблицы данных

GT52N10D5

GT52N10D5

N100V,RD(MAX)<7.5M@10V,RD(MAX)<1

Goford Semiconductor

12635 1.64
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 71A (Tc) 4.5V, 10V 7.5mOhm @ 50A, 10V 2.5V @ 250µA 44.5 nC @ 10 V ±20V 2626 pF @ 50 V - 79W (Tc) -55°C ~ 150°C (TJ) Surface Mount
GT100N12D5

Таблицы данных

GT100N12D5

GT100N12D5

N120V,RD(MAX)<10M@10V,VTH2.5V~3.

Goford Semiconductor

10000 1.64
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 120 V 70A - 10mOhm @ 35A, 10V 3.5V @ 250µA 50 nC @ 10 V ±20V 3050 pF @ 60 V - 120W -55°C ~ 150°C (TJ) Surface Mount
PJD80N04_L2_00001 PJD80N04_L2_00001

PJD80N04_L2_00001

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2960 0.76
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta), 80A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.5V @ 250µA 25 nC @ 4.5 V ±20V 1258 pF @ 25 V - 2W (Ta), 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJQ4401P-AU_R2_000A1

Таблицы данных

PJQ4401P-AU_R2_000A1

PJQ4401P-AU_R2_000A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

4984 0.78
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 50A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.5V @ 250µA 27 nC @ 4.5 V ±20V 3228 pF @ 15 V - 2W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJQ5442_R2_00001 PJQ5442_R2_00001

PJQ5442_R2_00001

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2798 0.78
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta), 90A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.5V @ 250µA 25 nC @ 4.5 V ±20V 1258 pF @ 25 V - 2W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G08P06D3

Таблицы данных

G08P06D3

G08P06D3

P60V,RD(MAX)<52M@-10V,VTH-2V~-3.

Goford Semiconductor

2158 0.78
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 10V 52mOhm @ 6A, 10V 3.5V @ 250µA 25 nC @ 10 V ±20V 2972 pF @ 30 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G60N04K

Таблицы данных

G60N04K

G60N04K

N40V,RD(MAX)<7M@10V,RD(MAX)<12M@

Goford Semiconductor

2490 0.78
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 40 V 60A - 7mOhm @ 30A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1800 pF @ 20 V - 65W -55°C ~ 150°C (TJ) Surface Mount
18N10

Таблицы данных

18N10

18N10

N100V,RD(MAX)<53M@10V,RD(MAX)<63

Goford Semiconductor

2460 0.78
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 25A - 53mOhm @ 10A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 1318 pF @ 50 V - 62.5W -55°C ~ 150°C (TJ) Surface Mount
60N06

Таблицы данных

60N06

60N06

N60V,RD(MAX)<17M@10V,RD(MAX)<21M

Goford Semiconductor

1832 0.78
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 50A - 17mOhm @ 5A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 2050 pF @ 30 V - 85W -55°C ~ 150°C (TJ) Surface Mount
IRF7606TR

Таблицы данных

IRF7606TR

IRF7606TR

MOSFET P-CH 30V 3.6A MICRO8

Infineon Technologies

1111 0.79
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 90mOhm @ 2.4A, 10V 1V @ 250µA 30 nC @ 10 V ±20V 520 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQPF2N70

Таблицы данных

FQPF2N70

FQPF2N70

MOSFET N-CH 700V 2A TO220F

Fairchild Semiconductor

42241 0.63
- +

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Bulk - Active N-Channel MOSFET (Metal Oxide) 700 V 2A (Tc) 10V 6.3Ohm @ 1A, 10V 5V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC0906NSATMA1

Таблицы данных

BSC0906NSATMA1

BSC0906NSATMA1

MOSFET N-CH 30V 18A/63A TDSON

Infineon Technologies

4900 0.80
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 63A (Tc) 4.5V, 10V 4.5mOhm @ 30A, 10V 2V @ 250µA 13 nC @ 10 V ±20V 870 pF @ 15 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJD25N10A_L2_00001 PJD25N10A_L2_00001

PJD25N10A_L2_00001

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

2995 0.81
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 4.4A (Ta), 25A (Tc) 4.5V, 10V 50mOhm @ 15A, 10V 2.5V @ 250µA 61 nC @ 10 V ±20V 3601 pF @ 15 V - 2W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJD40N04-AU_L2_000A1 PJD40N04-AU_L2_000A1

PJD40N04-AU_L2_000A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2986 0.83
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta), 40A (Tc) 4.5V, 10V 12mOhm @ 20A, 10V 2.5V @ 250µA 10 nC @ 4.5 V ±20V 1040 pF @ 20 V - 2.4W (Ta), 43.2W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJQ5466A-AU_R2_000A1

Таблицы данных

PJQ5466A-AU_R2_000A1

PJQ5466A-AU_R2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2992 0.83
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 6.5A (Ta), 40A (Tc) 4.5V, 10V 21mOhm @ 15A, 10V 2.5V @ 250µA 28 nC @ 10 V ±20V 1680 pF @ 20 V - 2.4W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJQ4464AP-AU_R2_000A1 PJQ4464AP-AU_R2_000A1

PJQ4464AP-AU_R2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3400 0.84
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 7.3A (Ta), 33A (Tc) 4.5V, 10V 17mOhm @ 16A, 10V 2.5V @ 250µA 13.5 nC @ 4.5 V ±20V 1574 pF @ 25 V - 2.4W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMC7680

Таблицы данных

FDMC7680

FDMC7680

MOSFET N-CH 30V 14.8A 8MLP

Fairchild Semiconductor

11422 0.64
- +

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Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 14.8A (Ta) 4.5V, 10V 7.2mOhm @ 14.8A, 10V 3V @ 250µA 42 nC @ 10 V ±20V 2855 pF @ 15 V - 2.3W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJD25N06A-AU_L2_000A1 PJD25N06A-AU_L2_000A1

PJD25N06A-AU_L2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2940 0.84
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 5.5A (Ta), 25A (Tc) 4.5V, 10V 34mOhm @ 15A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 1173 pF @ 25 V - 2.4W (Ta), 48.4W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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