Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTH450P2

Таблицы данных

IXTH450P2

IXTH450P2

MOSFET N-CH 500V 16A TO247

IXYS

122 6.25
- +

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Tube PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 330mOhm @ 8A, 10V 4.5V @ 250µA 43 nC @ 10 V ±30V 2530 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP16N60N

Таблицы данных

FCP16N60N

FCP16N60N

MOSFET N-CH 600V 16A TO220-3

onsemi

557 6.26
- +

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Tube SupreMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 199mOhm @ 8A, 10V 4V @ 250µA 52.3 nC @ 10 V ±30V 2170 pF @ 100 V - 134.4W (Tc) -55°C ~ 150°C (TJ) Through Hole
STB21NM60ND

Таблицы данных

STB21NM60ND

STB21NM60ND

MOSFET N-CH 600V 17A D2PAK

STMicroelectronics

440 6.26
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® FDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 220mOhm @ 8.5A, 10V 5V @ 250µA 60 nC @ 10 V ±25V 1800 pF @ 50 V - 140W (Tc) 150°C (TJ) Surface Mount
NTMT150N65S3HF

Таблицы данных

NTMT150N65S3HF

NTMT150N65S3HF

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

2985 6.27
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 150mOhm @ 12A, 10V 5V @ 540µA 43 nC @ 10 V ±30V 1985 pF @ 400 V - 192W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB24N65EFT1-GE3

Таблицы данных

SIHB24N65EFT1-GE3

SIHB24N65EFT1-GE3

N-CHANNEL 650V

Vishay Siliconix

493 6.30
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® E Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 156mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2774 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB30N60ET1-GE3

Таблицы данных

SIHB30N60ET1-GE3

SIHB30N60ET1-GE3

N-CHANNEL 600V

Vishay Siliconix

684 6.35
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STI30N65M5

Таблицы данных

STI30N65M5

STI30N65M5

MOSFET N-CH 650V 22A I2PAK

STMicroelectronics

993 6.44
- +

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Tube MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 139mOhm @ 11A, 10V 5V @ 250µA 64 nC @ 10 V ±25V 2880 pF @ 100 V - 140W (Tc) 150°C (TJ) Through Hole
STI32N65M5

Таблицы данных

STI32N65M5

STI32N65M5

MOSFET N-CH 650V 24A I2PAK

STMicroelectronics

1005 6.54
- +

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Tube MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 119mOhm @ 12A, 10V 5V @ 250µA 72 nC @ 10 V ±25V 3320 pF @ 100 V - 150W (Tc) 150°C (TJ) Through Hole
STP32N65M5

Таблицы данных

STP32N65M5

STP32N65M5

MOSFET N-CH 650V 24A TO220AB

STMicroelectronics

370 6.55
- +

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Tube MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 119mOhm @ 12A, 10V 5V @ 250µA 72 nC @ 10 V ±25V 3320 pF @ 100 V - 150W (Tc) 150°C (TJ) Through Hole
STW15NM60ND

Таблицы данных

STW15NM60ND

STW15NM60ND

MOSFET N-CH 600V 14A TO247-3

STMicroelectronics

372 6.57
- +

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Tube FDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 299mOhm @ 7A, 10V 5V @ 250µA 40 nC @ 10 V ±25V 1250 pF @ 50 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB0630N1507L

Таблицы данных

FDB0630N1507L

FDB0630N1507L

MOSFET N-CH 150V 130A TO263-7

onsemi

684 6.60
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 6.4mOhm @ 18A, 10V 4V @ 250µA 135 nC @ 10 V ±20V 9895 pF @ 75 V - 3.8W (Ta), 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STO36N60M6

Таблицы данных

STO36N60M6

STO36N60M6

MOSFET N-CH 600V 30A TOLL

STMicroelectronics

964 6.62
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 99mOhm @ 15A, 10V 4.75V @ 250µA 44.3 nC @ 10 V ±25V 1960 pF @ 100 V - 230W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RSJ650N10TL

Таблицы данных

RSJ650N10TL

RSJ650N10TL

MOSFET N-CH 100V 65A LPTS

Rohm Semiconductor

665 6.62
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 65A (Ta) 4V, 10V 9.1mOhm @ 32.5A, 10V 2.5V @ 1mA 260 nC @ 10 V ±20V 10780 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
STFI6N65K3

Таблицы данных

STFI6N65K3

STFI6N65K3

MOSFET N-CH 650V 5.4A I2PAKFP

STMicroelectronics

500 6.64
- +

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Tube SuperMESH3™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 5.4A (Tc) 10V 1.3Ohm @ 2.7A, 10V 4.5V @ 50µA 33 nC @ 10 V ±30V 880 pF @ 50 V - 30W (Tc) 150°C (TJ) Through Hole
SIHW30N60E-GE3

Таблицы данных

SIHW30N60E-GE3

SIHW30N60E-GE3

MOSFET N-CH 600V 29A TO247AD

Vishay Siliconix

159 6.70
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB16N50C-E3

Таблицы данных

SIHB16N50C-E3

SIHB16N50C-E3

MOSFET N-CH 500V 16A D2PAK

Vishay Siliconix

990 6.76
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 68 nC @ 10 V ±30V 1900 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP34N65M5

Таблицы данных

STP34N65M5

STP34N65M5

MOSFET N-CH 650V 28A TO220

STMicroelectronics

335 6.77
- +

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Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 110mOhm @ 14A, 10V 5V @ 250µA 62.5 nC @ 10 V ±25V 2700 pF @ 100 V - 190W (Tc) 150°C (TJ) Through Hole
R6020PNJFRATL

Таблицы данных

R6020PNJFRATL

R6020PNJFRATL

MOSFET N-CH 600V 20A LPTS

Rohm Semiconductor

922 6.79
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 250mOhm @ 10A, 10V 4.5V @ 1mA 65 nC @ 10 V ±30V 2040 pF @ 25 V - 304W (Tc) 150°C (TJ) Surface Mount
IXFP7N100P

Таблицы данных

IXFP7N100P

IXFP7N100P

MOSFET N-CH 1000V 7A TO220AB

IXYS

3547 6.81
- +

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Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 7A (Tc) 10V 1.9Ohm @ 3.5A, 10V 6V @ 1mA 47 nC @ 10 V ±30V 2590 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R120C7XKSA1

Таблицы данных

IPW60R120C7XKSA1

IPW60R120C7XKSA1

MOSFET N-CH 600V 19A TO247-3

Infineon Technologies

240 6.87
- +

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Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 120mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1500 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
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