Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IMZA65R030M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
200 | 24.03 |
ДобавитьРасследования |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 53A (Tc) | 18V | 42mOhm @ 29.5A, 18V | 5.7V @ 8.8mA | 48 nC @ 18 V | +20V, -2V | 1643 pF @ 400 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK32N100PMOSFET N-CH 1000V 32A TO264AA |
289 | 24.37 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 320mOhm @ 16A, 10V | 6.5V @ 1mA | 225 nC @ 10 V | ±30V | 14200 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TW045N120C,S1FG3 1200V SIC-MOSFET TO-247 45MO |
150 | 24.84 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 40A (Tc) | 18V | 59mOhm @ 20A, 18V | 5V @ 6.7mA | 57 nC @ 18 V | +25V, -10V | 1969 pF @ 800 V | - | 182W (Tc) | 175°C | Through Hole |
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Таблицы данных |
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RJK60S5DPN-00#T2N-CHANNEL POWER MOSFET |
138686 | 14.80 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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RJK60S5DPK-M0#T0MOSFET N-CH 600V 20A TO3PSG |
73063 | 14.80 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | - | 178mOhm @ 10A, 10V | - | 27 nC @ 10 V | - | 1600 pF @ 25 V | Super Junction | - | - | Through Hole |
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Таблицы данных |
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RJK60S5DPE-00#J3MOSFET N-CH 600V 20A 4LDPAK |
40000 | 14.80 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | - | 178mOhm @ 10A, 10V | - | 27 nC @ 10 V | - | 1600 pF @ 25 V | Super Junction | 125W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXKR47N60C5MOSFET N-CH 600V 47A ISOPLUS247 |
107 | 25.05 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190 nC @ 10 V | ±20V | 6800 pF @ 100 V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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UF4SC120030K4S1200V/30MOHM SIC STACKED FAST CA |
584 | 26.10 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 53A (Tc) | 12V | 39mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 800 V | ±20V | 1450 pF @ 15 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
| |
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FS50KMJ-06F#B00DISCRETE / POWER MOSFET |
18835 | 15.50 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
|
4AM17-91POWER N AND P CHANNEL MOSFETS |
38792 | 15.89 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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H5N2513PL-EN-CHANNEL POWER MOSFET |
1189 | 16.03 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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IXFK40N90PMOSFET N-CH 900V 40A TO264AA |
270 | 29.25 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 40A (Tc) | 10V | 230mOhm @ 20A, 10V | 6.5V @ 1mA | 230 nC @ 10 V | ±30V | 14000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
| |
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H5N5011PL-EN-CHANNEL POWER MOSFET |
1435 | 17.07 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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UF4SC120023K4S1200V/23MOHM SIC STACKED FAST CA |
574 | 31.45 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 53A (Tc) | 12V | 29mOhm @ 40A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1430 pF @ 800 V | - | 385W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTE2392MOSFET N-CHANNEL 100V 40A TO3 |
936 | 32.76 |
ДобавитьРасследования |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 10V | 55mOhm @ 20A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TW030N120C,S1FG3 1200V SIC-MOSFET TO-247 30MO |
175 | 36.09 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 60A (Tc) | 18V | 40mOhm @ 30A, 18V | 5V @ 13mA | 82 nC @ 18 V | +25V, -10V | 2925 pF @ 800 V | - | 249W (Tc) | 175°C | Through Hole |
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Таблицы данных |
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IXTX240N075L2MOSFET N-CH 75V 240A PLUS247-3 |
280 | 36.42 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 240A (Tc) | 10V | 7mOhm @ 120A, 10V | 4.5V @ 3mA | 546 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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4AK17-91N-CHANNEL POWER MOSFET |
29649 | 20.53 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
|
MRF9030GMR130W RF PWR FET TO270GULL |
500 | 20.86 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
|
HF9969-91AUTOMOTIVE POWER MOSFET |
2400 | 21.89 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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