Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
|
DMG6968UQ-7MOSFET N-CH 20V 6.5A SOT23-3 |
3073 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | 1.8V, 4.5V | 25mOhm @ 6.5A, 4.5V | 900mV @ 250µA | 8.5 nC @ 4.5 V | ±12V | 151 pF @ 10 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
DMG2302UQ-7MOSFET N-CH 20V 4.2A SOT23-3 |
3646 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.2A (Ta) | 2.5V, 4.5V | 90mOhm @ 3.6A, 4.5V | 1V @ 50µA | 7 nC @ 4.5 V | ±8V | 594.3 pF @ 10 V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
| |
|
IMT65R260M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
3011 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
|
IMT65R030M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2119 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
|
IMT65R072M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
3561 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
|
IMT65R057M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
3447 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
|
IMT65R163M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2551 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
|
IMT65R107M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2415 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
|
IMT65R022M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2422 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
IMT65R039M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2866 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
BSC0303LSATMA1TRENCH >=100V PG-TDSON-8 |
3063 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 68A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 2.4V @ 72µA | 51 nC @ 10 V | ±20V | 4900 pF @ 60 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
| |
|
IMT65R083M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2717 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
|
IMT65R048M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2396 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
|
IPA65R190DEXKSA1MOSFET |
3830 | 0.00 |
ДобавитьРасследования |
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
|
IPA60R650CEE8210XKSA1MOSFET |
3963 | 0.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.9A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
CTLM7110-M832D BKTRANSISTOR |
2323 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 1A (Ta) | 1.5V, 4.5V | 250mOhm @ 100mA, 1.5V | 1.2V @ 1mA | 2.4 nC @ 4.5 V | 8V | 220 pF @ 10 V | Schottky Diode (Isolated) | 1.65W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
CTLM7110-M832D TRTRANSISTOR |
3728 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 1A (Ta) | 1.5V, 4.5V | 250mOhm @ 100mA, 1.5V | 1.2V @ 1mA | 2.4 nC @ 4.5 V | 8V | 220 pF @ 10 V | Schottky Diode (Isolated) | 1.65W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
CTLM8110-M832D TRTRANSISTOR |
3672 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 860mA (Ta) | 1.8V, 4.5V | 240mOhm @ 200mA, 1.8V | 1V @ 250µA | 3.56 nC @ 4.5 V | 8V | 200 pF @ 16 V | Schottky Diode (Isolated) | 1.65W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
CTLM8110-M832D BKTRANSISTOR |
3173 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 860mA (Ta) | 1.8V, 4.5V | 240mOhm @ 200mA, 1.8V | 1V @ 250µA | 3.56 nC @ 4.5 V | 8V | 200 pF @ 16 V | Schottky Diode (Isolated) | 1.65W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount |
| |
|
MSC180SMA120SAMOSFET SIC 1200 V 180 MOHM TO-26 |
2852 | 0.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 21A (Tc) | 20V | 225mOhm @ 8A, 20V | 3.26V @ 500µA | 34 nC @ 20 V | +23V, -10V | 510 pF @ 1000 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - |
Запрос котировок
