Грузовой вагон ( 
Регистрация| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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IXFX24N100FMOSFET N-CH 1000V 24A PLUS247-3 |
2007 | 0.00 |
ДобавитьРасследования |
Tube | HiPerRF™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 24A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 195 nC @ 10 V | ±20V | 6600 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT1001R1BNMOSFET N-CH 1000V 10.5A TO247AD |
2090 | 0.00 |
ДобавитьРасследования |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10.5A (Tc) | 10V | 1.1Ohm @ 5.25A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT1001RBNMOSFET N-CH 1000V 11A TO247AD |
2429 | 0.00 |
ДобавитьРасследования |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 11A (Tc) | 10V | 1Ohm @ 5.5A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT1002RBNGMOSFET N-CH 1000V 8A TO247AD |
3874 | 0.00 |
ДобавитьРасследования |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 8A (Tc) | 10V | 1.6Ohm @ 4A, 10V | 4V @ 1mA | 105 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT4065BNGMOSFET N-CH 400V 11A TO247AD |
2084 | 0.00 |
ДобавитьРасследования |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 11A (Tc) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1mA | 55 nC @ 10 V | ±30V | 950 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT40M42JNMOSFET N-CH 400V 86A ISOTOP |
2796 | 0.00 |
ДобавитьРасследования |
Tray | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 86A (Tc) | 10V | 42mOhm @ 43A, 10V | 4V @ 5mA | 760 nC @ 10 V | ±30V | 14000 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT40M75JNMOSFET N-CH 400V 56A ISOTOP |
3727 | 0.00 |
ДобавитьРасследования |
Tray | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 56A (Tc) | 10V | 75mOhm @ 28A, 10V | 4V @ 2.5mA | 370 nC @ 10 V | ±30V | 6800 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT5012JNMOSFET N-CH 500V 43A ISOTOP |
2250 | 0.00 |
ДобавитьРасследования |
Tray | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 43A (Tc) | 10V | 120mOhm @ 21.5A, 10V | 4V @ 2.5mA | 370 nC @ 10 V | ±30V | 6500 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT5020BNMOSFET N-CH 500V 28A TO247AD |
2066 | 0.00 |
ДобавитьРасследования |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT5020BNFRMOSFET N-CH 500V 28A TO247AD |
3582 | 0.00 |
ДобавитьРасследования |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT5022BNGMOSFET N-CH 500V 27A TO247AD |
3711 | 0.00 |
ДобавитьРасследования |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | 10V | 220mOhm @ 13.5A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT5025BNMOSFET N-CH 500V 23A TO247AD |
3810 | 0.00 |
ДобавитьРасследования |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 23A (Tc) | 10V | 250mOhm @ 11.5A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT6030BNMOSFET N-CH 600V 23A TO247AD |
3917 | 0.00 |
ДобавитьРасследования |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 300mOhm @ 11.5A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT6040BNMOSFET N-CH 600V 18A TO247AD |
2153 | 0.00 |
ДобавитьРасследования |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 400mOhm @ 9A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT6040BNGMOSFET N-CH 600V 18A TO247AD |
3017 | 0.00 |
ДобавитьРасследования |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 400mOhm @ 9A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT8018JNMOSFET N-CH 800V 40A ISOTOP |
2625 | 0.00 |
ДобавитьРасследования |
Tray | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 40A (Tc) | 10V | 180mOhm @ 20A, 10V | 4V @ 5mA | 700 nC @ 10 V | ±30V | 14000 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT8075BNMOSFET N-CH 800V 13A TO247AD |
2076 | 0.00 |
ДобавитьРасследования |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 750mOhm @ 6.5A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT58MJ50JMOSFET N-CH 500V 58A ISOTOP |
2502 | 0.00 |
ДобавитьРасследования |
Bulk | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT10M07JVRMOSFET N-CH 100V 225A ISOTOP |
2283 | 0.00 |
ДобавитьРасследования |
Bulk | POWER MOS V® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 225A (Tc) | 10V | - | 4V @ 5mA | 1050 nC @ 10 V | ±30V | 21600 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT10M11JVRMOSFET N-CH 100V 144A ISOTOP |
3907 | 0.00 |
ДобавитьРасследования |
Bulk | POWER MOS V® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 144A (Tc) | 10V | - | 4V @ 2.5mA | 450 nC @ 10 V | ±30V | 10300 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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