Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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AUIRLS8409-7PMOSFET N-CH 40V 240A D2PAK |
3944 | 0.00 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 4.5V, 10V | 0.75mOhm @ 100A, 10V | 2.4V @ 250µA | 266 nC @ 4.5 V | ±16V | 16488 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRLU3114ZMOSFET N-CH 40V 130A TO251-3 |
3154 | 0.00 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56 nC @ 4.5 V | ±16V | 3810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDMS86381-F085MOSFET N-CH 80V 30A POWER56 |
3935 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 30A (Tc) | 10V | 22mOhm @ 30A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±20V | 866 pF @ 40 V | - | 50W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS9411L-F085MOSFET N-CH 40V 30A POWER56 |
2214 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 30A (Tc) | 10V | 7mOhm @ 30A, 10V | 3V @ 250µA | 28 nC @ 10 V | ±20V | 1210 pF @ 20 V | - | 50W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDC021N30MOSFET N-CH 30V 6.1A SUPERSOT6 |
3265 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.1A (Ta) | 4.5V, 10V | 26mOhm @ 6.1A, 10V | 3V @ 250µA | 10.8 nC @ 10 V | ±20V | 710 pF @ 15 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS86580-F085MOSFET N-CH 60V 50A POWER56 |
33000 | 4.80 |
ДобавитьРасследования |
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 9.6mOhm @ 50A, 10V | 4.2V @ 250µA | 30 nC @ 10 V | ±20V | 1430 pF @ 30 V | - | 75W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDWS5360L-F085MOSFET N-CH 60V 60A POWER56 |
3685 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 4.5V, 10V | 8.5mOhm @ 60A, 10V | 3V @ 250µA | 72 nC @ 10 V | ±20V | 3695 pF @ 30 V | - | 150W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
| |
|
APT25SM120BSICFET N-CH 1200V 25A TO247 |
2629 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 25A (Tc) | 20V | 175mOhm @ 10A, 20V | 2.5V @ 1mA | 72 nC @ 20 V | +25V, -10V | - | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
| |
|
APT25SM120SSICFET N-CH 1200V 25A D3 |
2090 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 25A (Tc) | - | 175mOhm @ 10A, 20V | 2.5V @ 1mA | 72 nC @ 20 V | - | - | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT70SM70BSICFET N-CH 700V 65A TO247 |
2564 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 700 V | 65A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125 nC @ 20 V | +25V, -10V | - | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
| |
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APT70SM70JSICFET N-CH 700V 49A SOT227 |
2548 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 700 V | 49A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125 nC @ 20 V | +25V, -10V | - | - | 165W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT70SM70SSICFET N-CH 700V 65A D3PAK |
3049 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 700 V | 65A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125 nC @ 20 V | +25V, -10V | - | - | 220W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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APT80SM120BSICFET N-CH 1200V 80A TO247 |
3603 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 80A (Tc) | 20V | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235 nC @ 20 V | +25V, -10V | - | - | 555W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
| |
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APT80SM120JSICFET N-CH 1200V 51A SOT227 |
2867 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 51A (Tc) | 20V | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235 nC @ 20 V | +25V, -10V | - | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT80SM120SSICFET N-CH 1200V 80A D3PAK |
3524 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 80A (Tc) | 20V | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235 nC @ 20 V | +25V, -10V | - | - | 625W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
| |
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JAN2N6898MOSFET P-CHANNEL 100V 25A TO3 |
3019 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 25A (Tc) | 10V | 200mOhm @ 15.8A, 10V | 4V @ 250µA | - | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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JANTX2N6898MOSFET P-CHANNEL 100V 25A TO3 |
2525 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 25A (Tc) | 10V | 200mOhm @ 15.8A, 10V | 4V @ 250µA | - | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
| |
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JANTXV2N6898MOSFET P-CHANNEL 100V 25A TO3 |
3567 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 25A (Tc) | 10V | 200mOhm @ 15.8A, 10V | 4V @ 250µA | - | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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62-0095PBFMOSFET N-CH 20V 10A/12A 8SOIC |
2260 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 10A (Ta), 12A (Tc) | 10V | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11 nC @ 4.5 V | - | 900 pF @ 10 V | - | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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62-0136PBFMOSFET N-CH 30V 19A 8-SOIC |
2599 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta) | 10V | 4.5mOhm @ 19A, 10V | 2.25V @ 250µA | 44 nC @ 4.5 V | ±20V | 3710 pF @ 15 V | - | 2.5W | -55°C ~ 150°C (TA) | Surface Mount |
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