Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PHM10030DLSX PHM10030DLSX

PHM10030DLSX

MOSFET N-CH LFPAK33

Nexperia USA Inc.

2429 0.00
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Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - Surface Mount
APT40SM120B

Таблицы данных

APT40SM120B

APT40SM120B

SICFET N-CH 1200V 41A TO247

Microsemi Corporation

2072 0.00
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Bulk - Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 20V 100mOhm @ 20A, 20V 3V @ 1mA (Typ) 130 nC @ 20 V +25V, -10V 2560 pF @ 1000 V - 273W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT40SM120S

Таблицы данных

APT40SM120S

APT40SM120S

SICFET N-CH 1200V 41A D3PAK

Microsemi Corporation

3076 0.00
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Bulk - Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 20V 100mOhm @ 20A, 20V 3V @ 1mA (Typ) 130 nC @ 20 V +25V, -10V 2560 pF @ 1000 V - 273W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT40SM120J

Таблицы данных

APT40SM120J

APT40SM120J

MOSFET N-CH 1200V 32A SOT227

Microsemi Corporation

3163 0.00
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Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 32A (Tc) 20V 100mOhm @ 20A, 20V 3V @ 1mA (Typ) 130 nC @ 20 V +25V, -10V 2560 pF @ 1000 V - 165W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
R5011ANX

Таблицы данных

R5011ANX

R5011ANX

MOSFET N-CH 500V 11A TO220FM

Rohm Semiconductor

2588 0.00
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Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Ta) 10V 500mOhm @ 5.5A, 10V 4.5V @ 1mA 30 nC @ 10 V ±30V 1000 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
RDD023N50TL

Таблицы данных

RDD023N50TL

RDD023N50TL

MOSFET N-CH 500V 2A CPT3

Rohm Semiconductor

3450 0.00
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 2A (Tc) 4V, 10V 5.4Ohm @ 1A, 10V 2V @ 1mA 11 nC @ 10 V ±20V 151 pF @ 25 V - 20W (Tc) 150°C (TJ) Surface Mount
RSD160P05TL

Таблицы данных

RSD160P05TL

RSD160P05TL

MOSFET P-CH 45V 16A CPT3

Rohm Semiconductor

3484 0.00
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 45 V 16A (Ta) 4V, 10V 50mOhm @ 16A, 10V 3V @ 1mA 16 nC @ 5 V ±20V 2000 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
RSD201N10TL

Таблицы данных

RSD201N10TL

RSD201N10TL

MOSFET N-CH 100V 20A CPT3

Rohm Semiconductor

3073 0.00
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 4V, 10V 46mOhm @ 20A, 10V 2.5V @ 1mA 55 nC @ 10 V ±20V 2100 pF @ 25 V - 850mW (Ta), 20W (Tc) 150°C (TJ) Surface Mount
RYE002N05TCL

Таблицы данных

RYE002N05TCL

RYE002N05TCL

MOSFET N-CH 50V 200MA EMT3

Rohm Semiconductor

2911 0.00
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Not For New Designs N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 0.9V, 4.5V 2.2Ohm @ 200mA, 4.5V 800mV @ 1mA - ±8V 26 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
R6015ANZC8

Таблицы данных

R6015ANZC8

R6015ANZC8

MOSFET N-CH 600V 15A TO3PF

Rohm Semiconductor

3335 0.00
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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 300mOhm @ 7.5A, 10V 4.15V @ 1mA 50 nC @ 10 V ±30V 1700 pF @ 25 V - 110W (Tc) 150°C (TJ) Through Hole
R6020ANZC8

Таблицы данных

R6020ANZC8

R6020ANZC8

MOSFET N-CH 600V 20A TO3PF

Rohm Semiconductor

3944 0.00
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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 220mOhm @ 10A, 10V 4.15V @ 1mA 65 nC @ 10 V ±30V 2040 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
R6020ENZ1C9

Таблицы данных

R6020ENZ1C9

R6020ENZ1C9

MOSFET N-CH 600V 20A TO247

Rohm Semiconductor

3715 0.00
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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 4V @ 1mA 60 nC @ 10 V ±20V 1400 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
R6020ENZC8

Таблицы данных

R6020ENZC8

R6020ENZC8

MOSFET N-CH 600V 20A TO3PF

Rohm Semiconductor

2742 0.00
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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 4V @ 1mA 60 nC @ 10 V ±20V 1400 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
R6024ENZ1C9

Таблицы данных

R6024ENZ1C9

R6024ENZ1C9

MOSFET N-CH 600V 24A TO247

Rohm Semiconductor

2563 0.00
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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 4V @ 1mA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
R6024ENZC8

Таблицы данных

R6024ENZC8

R6024ENZC8

MOSFET N-CH 600V 24A TO3PF

Rohm Semiconductor

2592 0.00
- +

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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 4V @ 1mA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
R6025ANZC8

Таблицы данных

R6025ANZC8

R6025ANZC8

MOSFET N-CH 600V 25A TO3PF

Rohm Semiconductor

3270 0.00
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Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 150mOhm @ 12.5A, 10V 4.5V @ 1mA 88 nC @ 10 V ±20V 3250 pF @ 10 V - 150W (Tc) 150°C (TJ) Through Hole
R6025FNZ1C9

Таблицы данных

R6025FNZ1C9

R6025FNZ1C9

MOSFET N-CH 600V 25A TO247

Rohm Semiconductor

2575 0.00
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Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 180mOhm @ 12.5A, 10V 5V @ 1mA 85 nC @ 10 V ±30V 3500 pF @ 25 V - 150W (Tc) 150°C (TJ) Through Hole
R6030ENZ1C9

Таблицы данных

R6030ENZ1C9

R6030ENZ1C9

MOSFET N-CH 600V 30A TO247

Rohm Semiconductor

3063 0.00
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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 4V @ 1mA 85 nC @ 10 V ±20V 2100 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
R6030ENZC8

Таблицы данных

R6030ENZC8

R6030ENZC8

MOSFET N-CH 600V 30A TO3PF

Rohm Semiconductor

3592 0.00
- +

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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 4V @ 1mA 85 nC @ 10 V ±20V 2100 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
R6035ENZ1C9

Таблицы данных

R6035ENZ1C9

R6035ENZ1C9

MOSFET N-CH 600V 35A TO247

Rohm Semiconductor

2769 0.00
- +

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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 102mOhm @ 18.1A, 10V 4V @ 1mA 110 nC @ 10 V ±20V 2720 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
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