Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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3N163-2MOSFET P-CH 40V 50MA TO72 |
3181 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 50mA (Ta) | 20V | 250Ohm @ 100µA, 20V | 5V @ 10µA | - | ±30V | 3.5 pF @ 15 V | - | 375mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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3N163-E3MOSFET P-CH 40V 50MA TO72 |
3293 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 50mA (Ta) | 20V | 250Ohm @ 100µA, 20V | 5V @ 10µA | - | ±30V | 3.5 pF @ 15 V | - | 375mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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3N164MOSFET P-CH 30V 50MA TO72 |
2925 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 50mA (Ta) | 20V | 300Ohm @ 100µA, 20V | 5V @ 10µA | - | ±30V | 3.5 pF @ 15 V | - | 375mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFD113MOSFET N-CH 60V 800MA 4DIP |
2746 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 800mA (Tc) | 10V | 800mOhm @ 800mA, 10V | 4V @ 250µA | 7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
| |
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IRFD213MOSFET N-CH 250V 450MA 4DIP |
2953 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 450mA (Ta) | - | 2Ohm @ 270mA, 10V | 4V @ 250µA | 8.2 nC @ 10 V | - | 140 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | Through Hole |
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IRFD9123MOSFET P-CH 100V 1A 4DIP |
2529 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | - | 600mOhm @ 600mA, 10V | 4V @ 250µA | 18 nC @ 10 V | - | 390 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IRFP21N60LMOSFET N-CH 600V 21A TO247-3 |
3783 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 320mOhm @ 13A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±30V | 4000 pF @ 25 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFP22N60KMOSFET N-CH 600V 22A TO247-3 |
3331 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 280mOhm @ 13A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±30V | 3570 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFP26N60LMOSFET N-CH 600V 26A TO247-3 |
3303 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V | 250mOhm @ 16A, 10V | 5V @ 250µA | 180 nC @ 10 V | ±30V | 5020 pF @ 25 V | - | 470W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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IRFP27N60KMOSFET N-CH 600V 27A TO247-3 |
2525 | 0.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 27A (Tc) | 10V | 220mOhm @ 16A, 10V | 5V @ 250µA | 180 nC @ 10 V | ±30V | 4660 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
| |
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IRFPS38N60LMOSFET N-CH 600V 38A SUPER247 |
2713 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 150mOhm @ 23A, 10V | 5V @ 250µA | 320 nC @ 10 V | ±30V | 7990 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
| |
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IRFPS40N60KMOSFET N-CH 600V 40A SUPER247 |
3992 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 130mOhm @ 24A, 10V | 5V @ 250µA | 330 nC @ 10 V | ±30V | 7970 pF @ 25 V | - | 570W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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SI4196DY-T1-GE3MOSFET N-CH 20V 8A 8SO |
3821 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 8A (Tc) | 1.8V, 4.5V | 27mOhm @ 8A, 4.5V | 1V @ 250µA | 22 nC @ 8 V | ±8V | 830 pF @ 10 V | - | 2W (Ta), 4.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI4752DY-T1-GE3MOSFET N-CH 30V 25A 8SO |
3128 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | SkyFET®, TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Tc) | 4.5V, 10V | 5.5mOhm @ 10A, 10V | 2.2V @ 1mA | 43 nC @ 10 V | ±20V | 1700 pF @ 15 V | Schottky Diode (Body) | 3W (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI8809EDB-T2-E1MOSFET P-CH 20V 1.9A MICROFOOT |
2179 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.94 (Ta) | 1.8V, 4.5V | 90mOhm @ 1.5A, 4.5V | 900mV @ 250µA | 15 nC @ 8 V | ±8V | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHB30N60E-E3MOSFET N-CH 600V 29A D2PAK |
3511 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHW23N60E-GE3MOSFET N-CH 600V 23A TO247AD |
3016 | 0.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 158mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 2418 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHW47N65E-GE3MOSFET N-CH 650V 47A TO247AD |
2547 | 0.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 72mOhm @ 24A, 10V | 4V @ 250µA | 273 nC @ 10 V | ±20V | 5682 pF @ 100 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIR482DP-T1-GE3MOSFET N-CH 30V 35A PPAK SO-8 |
3687 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 2.3V @ 250µA | 38 nC @ 10 V | ±20V | 1575 pF @ 15 V | - | 5W (Ta), 27.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIR814DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 |
2795 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2.1mOhm @ 20A, 10V | 2.3V @ 250µA | 86 nC @ 10 V | ±20V | 3800 pF @ 20 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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