Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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BUK953R5-60E,127MOSFET N-CH 60V 120A TO220AB |
3455 | 0.00 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 5V, 10V | 3.4mOhm @ 25A, 10V | 2.1V @ 1mA | 95 nC @ 5 V | ±10V | 13490 pF @ 25 V | - | 293W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BUK762R9-40E,118MOSFET N-CH 40V 100A D2PAK |
3972 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 2.9mOhm @ 25A, 10V | 4V @ 1mA | 79 nC @ 10 V | ±20V | 6200 pF @ 25 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK965R4-40E,118MOSFET N-CH 40V 75A D2PAK |
7196 | 0.63 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 5V | 4.4mOhm @ 25A, 10V | 2.1V @ 1mA | 33.9 nC @ 5 V | ±10V | 4483 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BUK968R3-40E,118MOSFET N-CH 40V 75A D2PAK |
4809 | 0.37 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 5V, 10V | 6.4mOhm @ 20A, 10V | 2.1V @ 1mA | 20.9 nC @ 5 V | ±10V | 2600 pF @ 25 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN1R6-40YLC,115MOSFET N-CH 40V 100A LFPAK56 |
3495 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 1.55mOhm @ 25A, 10V | 1.95V @ 1mA | 126 nC @ 10 V | ±20V | 7790 pF @ 20 V | - | 288W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMP1080UCB4-7MOSFET P-CH 12V 3.3A U-WLB1010-4 |
3561 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 3.3A (Ta) | 1.5V, 4.5V | 80mOhm @ 500mA, 4.5V | 1V @ 250µA | 5 nC @ 4.5 V | -6V | 350 pF @ 6 V | - | 820mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMP21D5UFD-7MOSFET P-CH 20V 600MA 3DFN |
3321 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 600mA (Ta) | 1.2V, 4.5V | 1Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.8 nC @ 8 V | ±8V | 46.1 pF @ 10 V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK7E1R9-40E,127MOSFET N-CH 40V 120A I2PAK |
24572 | 1.07 |
ДобавитьРасследования |
Bulk,Tube | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 1.9mOhm @ 25A, 10V | 4V @ 1mA | 118 nC @ 10 V | ±20V | 9700 pF @ 25 V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BUK954R8-60E,127MOSFET N-CH 60V 100A TO220AB |
3919 | 0.00 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 5V, 10V | 4.5mOhm @ 25A, 10V | 2.1V @ 1mA | 65 nC @ 5 V | ±10V | 9710 pF @ 25 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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GA04JT17-247TRANS SJT 1700V 4A TO247AB |
3634 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 4A (Tc) (95°C) | - | 480mOhm @ 4A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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GA16JT17-247TRANS SJT 1700V 16A TO247AB |
2413 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 16A (Tc) (90°C) | - | 110mOhm @ 16A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | Through Hole |
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2N7635-GATRANS SJT 650V 4A TO257 |
3165 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324 pF @ 35 V | - | 47W (Tc) | -55°C ~ 225°C (TJ) | Through Hole |
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2N7636-GATRANS SJT 650V 4A TO276 |
2583 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324 pF @ 35 V | - | 125W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount |
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2N7637-GATRANS SJT 650V 7A TO257 |
3422 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 7A (Tc) (165°C) | - | 170mOhm @ 7A | - | - | - | 720 pF @ 35 V | - | 80W (Tc) | -55°C ~ 225°C (TJ) | Through Hole |
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Таблицы данных |
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2N7638-GATRANS SJT 650V 8A TO276 |
3359 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 8A (Tc) (158°C) | - | 170mOhm @ 8A | - | - | - | 720 pF @ 35 V | - | 200W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount |
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Таблицы данных |
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2N7639-GATRANS SJT 650V 15A TO257 |
2531 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 15A (Tc) (155°C) | - | 105mOhm @ 15A | - | - | - | 1534 pF @ 35 V | - | 172W (Tc) | -55°C ~ 225°C (TJ) | Through Hole |
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2N7640-GATRANS SJT 650V 16A TO276 |
2578 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 16A (Tc) (155°C) | - | 105mOhm @ 16A | - | - | - | 1534 pF @ 35 V | - | 330W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount |
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Таблицы данных |
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SISA18DN-T1-GE3MOSFET N-CH 30V 38.3A PPAK1212-8 |
3297 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 30 V | 38.3A (Tc) | 4.5V, 10V | 7.5mOhm @ 10A, 10V | 2.4V @ 250µA | 21.5 nC @ 10 V | +20V, -16V | 1000 pF @ 15 V | - | 3.2W (Ta), 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIR642DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 |
2752 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2.4mOhm @ 15A, 10V | 2.3V @ 250µA | 84 nC @ 10 V | ±20V | 4155 pF @ 20 V | - | 4.8W (Ta), 41.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STL70N10F3MOSFET N CH 100V 82A PWRFLAT 5X6 |
3868 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | STripFET™ III | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 82A (Tc) | 10V | 8.4mOhm @ 8A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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