Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK20S06K3L(T6L1,NQ

Таблицы данных

TK20S06K3L(T6L1,NQ

TK20S06K3L(T6L1,NQ

MOSFET N-CH 60V 20A DPAK

Toshiba Semiconductor and Storage

3148 0.00
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Tape & Reel (TR) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) 6V, 10V 29mOhm @ 10A, 10V 3V @ 1mA 18 nC @ 10 V ±20V 780 pF @ 10 V - 38W (Tc) 175°C (TJ) Surface Mount
TK25E06K3,S1X(S

Таблицы данных

TK25E06K3,S1X(S

TK25E06K3,S1X(S

MOSFET N-CH 60V 25A TO220-3

Toshiba Semiconductor and Storage

2239 0.00
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Tube U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 60 V 25A (Ta) - 18mOhm @ 12.5A, 10V - 29 nC @ 10 V - - - 60W (Tc) 150°C (TJ) Through Hole
TK2P60D(TE16L1,NQ)

Таблицы данных

TK2P60D(TE16L1,NQ)

TK2P60D(TE16L1,NQ)

MOSFET N-CH 600V 2A PW-MOLD

Toshiba Semiconductor and Storage

3748 0.00
- +

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Tape & Reel (TR) π-MOSVII Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Ta) 10V 4.3Ohm @ 1A, 10V 4.4V @ 1mA 7 nC @ 10 V ±30V 280 pF @ 25 V - 60W (Tc) 150°C (TJ) Surface Mount
TK30S06K3L(T6L1,NQ

Таблицы данных

TK30S06K3L(T6L1,NQ

TK30S06K3L(T6L1,NQ

MOSFET N-CH 60V 30A DPAK

Toshiba Semiconductor and Storage

2026 0.00
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Tape & Reel (TR) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Ta) 6V, 10V 18Ohm @ 15A, 10V 3V @ 1mA 28 nC @ 10 V ±20V 1350 pF @ 10 V - 58W (Tc) 175°C (TJ) Surface Mount
TK35E10K3(S1SS-Q) TK35E10K3(S1SS-Q)

TK35E10K3(S1SS-Q)

MOSFET N-CH 100V 35A TO-220AB

Toshiba Semiconductor and Storage

2883 0.00
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Tube - Obsolete - - - - - - - - - - - - - Through Hole
TK40E10K3,S1X(S

Таблицы данных

TK40E10K3,S1X(S

TK40E10K3,S1X(S

MOSFET N-CH 100V 40A TO220-3

Toshiba Semiconductor and Storage

2339 0.00
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Tube U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 100 V 40A (Ta) - 15mOhm @ 20A, 10V 4V @ 1mA 84 nC @ 10 V - 4000 pF @ 10 V - - - Through Hole
TK40P03M1(T6RDS-Q)

Таблицы данных

TK40P03M1(T6RDS-Q)

TK40P03M1(T6RDS-Q)

MOSFET N-CH 30V 40A DPAK

Toshiba Semiconductor and Storage

3046 0.00
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Tape & Reel (TR) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 10.8mOhm @ 20A, 10V 2.3V @ 100µA 17.5 nC @ 10 V ±20V 1150 pF @ 10 V - - - Surface Mount
TK40S10K3Z(T6L1,NQ

Таблицы данных

TK40S10K3Z(T6L1,NQ

TK40S10K3Z(T6L1,NQ

MOSFET N-CH 100V 40A DPAK

Toshiba Semiconductor and Storage

2213 0.00
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Tape & Reel (TR) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 100 V 40A (Ta) 10V 18mOhm @ 20A, 10V 4V @ 1mA 61 nC @ 10 V ±20V 3110 pF @ 10 V - 93W (Tc) 175°C (TJ) Surface Mount
TK4A65DA(STA4,Q,M)

Таблицы данных

TK4A65DA(STA4,Q,M)

TK4A65DA(STA4,Q,M)

MOSFET N-CH 650V 3.5A TO220SIS

Toshiba Semiconductor and Storage

3927 0.00
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Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 3.5A (Ta) 10V 1.9Ohm @ 1.8A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK4P50D(T6RSS-Q)

Таблицы данных

TK4P50D(T6RSS-Q)

TK4P50D(T6RSS-Q)

MOSFET N-CH 500V 4A DPAK

Toshiba Semiconductor and Storage

2995 0.00
- +

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Расследования

Tape & Reel (TR) π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 4A (Ta) 10V 2Ohm @ 2A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 80W (Tc) 150°C (TJ) Surface Mount
TK4P55DA(T6RSS-Q)

Таблицы данных

TK4P55DA(T6RSS-Q)

TK4P55DA(T6RSS-Q)

MOSFET N-CH 550V 3.5A DPAK

Toshiba Semiconductor and Storage

3196 0.00
- +

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Расследования

Tape & Reel (TR) π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 3.5A (Ta) 10V 2.45Ohm @ 1.8A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 80W (Tc) 150°C (TJ) Surface Mount
TK4P55D(T6RSS-Q)

Таблицы данных

TK4P55D(T6RSS-Q)

TK4P55D(T6RSS-Q)

MOSFET N-CH 550V 4A DPAK

Toshiba Semiconductor and Storage

2994 0.00
- +

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Расследования

Tape & Reel (TR) π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 4A (Ta) 10V 1.88Ohm @ 2A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 80W (Tc) 150°C (TJ) Surface Mount
TK4P60DA(T6RSS-Q)

Таблицы данных

TK4P60DA(T6RSS-Q)

TK4P60DA(T6RSS-Q)

MOSFET N-CH 600V 3.5A DPAK

Toshiba Semiconductor and Storage

3382 0.00
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Расследования

Tape & Reel (TR) π-MOSVII Active N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Ta) 10V 2.2Ohm @ 1.8A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 80W (Tc) 150°C (TJ) Surface Mount
TK4P60DB(T6RSS-Q)

Таблицы данных

TK4P60DB(T6RSS-Q)

TK4P60DB(T6RSS-Q)

MOSFET N-CH 600V 3.7A DPAK

Toshiba Semiconductor and Storage

3929 0.00
- +

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Расследования

Tape & Reel (TR) π-MOSVII Active N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Ta) 10V 2Ohm @ 1.9A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 80W (Tc) 150°C (TJ) Surface Mount
TK50E06K3A,S1X(S

Таблицы данных

TK50E06K3A,S1X(S

TK50E06K3A,S1X(S

MOSFET N-CH 60V 50A TO220-3

Toshiba Semiconductor and Storage

3497 0.00
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Расследования

Tube U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 8.5mOhm @ 25A, 10V - 54 nC @ 10 V - - - - - Through Hole
TK50E06K3(S1SS-Q) TK50E06K3(S1SS-Q)

TK50E06K3(S1SS-Q)

MOSFET N-CH 60V 50A TO220-3

Toshiba Semiconductor and Storage

3697 0.00
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Расследования

Tube U-MOSIV Obsolete - - - - - - - - - - - - - Through Hole
TK50E08K3,S1X(S

Таблицы данных

TK50E08K3,S1X(S

TK50E08K3,S1X(S

MOSFET N-CH 75V 50A TO220-3

Toshiba Semiconductor and Storage

3994 0.00
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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 75 V 50A (Tc) - 12mOhm @ 25A, 10V - 55 nC @ 10 V - - - - - Through Hole
TK50E10K3(S1SS-Q) TK50E10K3(S1SS-Q)

TK50E10K3(S1SS-Q)

MOSFET N-CH 100V 50A TO-220AB

Toshiba Semiconductor and Storage

2882 0.00
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Расследования

Tube - Obsolete - - - - - - - - - - - - - Through Hole
TK60E08K3,S1X(S TK60E08K3,S1X(S

TK60E08K3,S1X(S

MOSFET N-CH 75V 60A TO220-3

Toshiba Semiconductor and Storage

2426 0.00
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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 75 V 60A - 9mOhm @ 30A, 10V - 75 nC @ 10 V - - - 128W - Through Hole
TK60P03M1,RQ(S

Таблицы данных

TK60P03M1,RQ(S

TK60P03M1,RQ(S

MOSFET N-CH 30V 60A DPAK

Toshiba Semiconductor and Storage

3486 0.00
- +

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Расследования

Tape & Reel (TR) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Ta) 4.5V, 10V 6.4mOhm @ 30A, 10V 2.3V @ 500µA 40 nC @ 10 V ±20V 2700 pF @ 10 V - 63W (Tc) 150°C (TJ) Surface Mount
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