Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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SI9424BDY-T1-GE3MOSFET P-CH 20V 5.6A 8SO |
2921 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.6A (Ta) | 2.5V, 4.5V | 25mOhm @ 7.1A, 4.5V | 850mV @ 250µA | 40 nC @ 4.5 V | ±9V | - | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI9434BDY-T1-GE3MOSFET P-CH 20V 4.5A 8SO |
3628 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.5A (Ta) | 2.5V, 4.5V | 40mOhm @ 6.3A, 4.5V | 1.5V @ 250µA | 18 nC @ 4.5 V | ±8V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIA438EDJ-T1-GE3MOSFET N-CH 20V 6A PPAK SC70-6 |
3377 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Tc) | 2.5V, 4.5V | 46mOhm @ 3.9A, 4.5V | 1.4V @ 250µA | 12 nC @ 10 V | ±12V | 350 pF @ 10 V | - | 2.4W (Ta), 11.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIB411DK-T1-GE3MOSFET P-CH 20V 9A PPAK SC75-6 |
2003 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 9A (Tc) | 1.8V, 4.5V | 66mOhm @ 3.3A, 4.5V | 1V @ 250µA | 15 nC @ 8 V | ±8V | 470 pF @ 10 V | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIE726DF-T1-E3MOSFET N-CH 30V 60A 10POLARPAK |
3881 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | SkyFET®, TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 2.4mOhm @ 25A, 10V | 3V @ 250µA | 160 nC @ 10 V | ±20V | 7400 pF @ 15 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIE800DF-T1-GE3MOSFET N-CH 30V 50A 10POLARPAK |
3398 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 7.2mOhm @ 11A, 10V | 3V @ 250µA | 35 nC @ 10 V | ±20V | 1600 pF @ 15 V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIE804DF-T1-GE3MOSFET N-CH 150V 37A 10POLARPAK |
3347 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 37A (Tc) | 6V, 10V | 38mOhm @ 7.6A, 10V | 3V @ 250µA | 105 nC @ 10 V | ±20V | 3000 pF @ 50 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIE806DF-T1-GE3MOSFET N-CH 30V 60A 10POLARPAK |
2539 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 1.7mOhm @ 25A, 10V | 2V @ 250µA | 250 nC @ 10 V | ±12V | 13000 pF @ 15 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIE816DF-T1-E3MOSFET N-CH 60V 60A 10POLARPAK |
2655 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 7.4mOhm @ 19.8A, 10V | 4.4V @ 250µA | 77 nC @ 10 V | ±20V | 3100 pF @ 30 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIE816DF-T1-GE3MOSFET N-CH 60V 60A 10POLARPAK |
3659 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 7.4mOhm @ 19.8A, 10V | 4.4V @ 250µA | 77 nC @ 10 V | ±20V | 3100 pF @ 30 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIE830DF-T1-GE3MOSFET N-CH 30V 50A 10POLARPAK |
2328 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | WFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 4.2mOhm @ 16A, 10V | 2V @ 250µA | 115 nC @ 10 V | ±12V | 5500 pF @ 15 V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIE836DF-T1-E3MOSFET N-CH 200V 18.3A 10POLARPK |
2666 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 18.3A (Tc) | 10V | 130mOhm @ 4.1A, 10V | 4.5V @ 250µA | 41 nC @ 10 V | ±30V | 1200 pF @ 100 V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIE844DF-T1-E3MOSFET N-CH 30V 44.5A 10POLARPAK |
2343 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 44.5A (Tc) | 4.5V, 10V | 7mOhm @ 12.1A, 10V | 3V @ 250µA | 44 nC @ 10 V | ±20V | 2150 pF @ 15 V | - | 5.2W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIE844DF-T1-GE3MOSFET N-CH 30V 44.5A 10POLARPAK |
3716 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 44.5A (Tc) | 4.5V, 10V | 7mOhm @ 12.1A, 10V | 3V @ 250µA | 44 nC @ 10 V | ±20V | 2150 pF @ 15 V | - | 5.2W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIE848DF-T1-E3MOSFET N-CH 30V 60A 10POLARPAK |
3554 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 1.6mOhm @ 25A, 10V | 2.5V @ 250µA | 138 nC @ 10 V | ±20V | 6100 pF @ 15 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIE854DF-T1-E3MOSFET N-CH 100V 60A 10POLARPAK |
2620 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 14.2mOhm @ 13.2A, 10V | 4.4V @ 250µA | 75 nC @ 10 V | ±20V | 3100 pF @ 50 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIE860DF-T1-E3MOSFET N-CH 30V 60A 10POLARPAK |
2440 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 2.1mOhm @ 21.7A, 10V | 2.5V @ 250µA | 105 nC @ 10 V | ±20V | 4500 pF @ 15 V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIE862DF-T1-GE3MOSFET N-CH 30V 50A 10POLARPAK |
2339 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 10V | 3.2mOhm @ 20A, 10V | 2.2V @ 250µA | 75 nC @ 10 V | ±20V | 3100 pF @ 15 V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHF8N50L-E3MOSFET N-CH 500V 8A TO220 |
2376 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 1Ohm @ 4A, 10V | 5V @ 250µA | 34 nC @ 0 V | ±30V | 873 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIJ400DP-T1-GE3MOSFET N-CH 30V 32A PPAK SO-8 |
2864 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.5V @ 250µA | 150 nC @ 10 V | ±20V | 7765 pF @ 15 V | - | 5W (Ta), 69.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
Запрос котировок
