Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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SI5401DC-T1-GE3MOSFET P-CH 20V 5.2A 1206-8 |
2681 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.2A (Ta) | 1.8V, 4.5V | 32mOhm @ 5.2A, 4.5V | 1V @ 250µA | 25 nC @ 4.5 V | ±8V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
|
SI5402DC-T1-E3MOSFET N-CH 30V 4.9A 1206-8 |
3803 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.9A (Ta) | 4.5V, 10V | 35mOhm @ 4.9A, 10V | 1V @ 250µA (Min) | 20 nC @ 10 V | ±20V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI5402DC-T1-GE3MOSFET N-CH 30V 4.9A 1206-8 |
2973 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.9A (Ta) | 4.5V, 10V | 35mOhm @ 4.9A, 10V | 1V @ 250µA (Min) | 20 nC @ 10 V | ±20V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI5404BDC-T1-GE3MOSFET N-CH 20V 5.4A 1206-8 |
3456 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 5.4A (Ta) | 2.5V, 4.5V | 28mOhm @ 5.4A, 4.5V | 1.5V @ 250µA | 11 nC @ 4.5 V | ±12V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI5406DC-T1-GE3MOSFET N-CH 12V 6.9A 1206-8 |
2359 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 6.9A (Ta) | 2.5V, 4.5V | 20mOhm @ 6.9A, 4.5V | 600mV @ 1.2mA (Min) | 20 nC @ 4.5 V | ±8V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI5414DC-T1-GE3MOSFET N-CH 20V 6A 1206-8 |
3429 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Tc) | 2.5V, 4.5V | 17mOhm @ 9.9A, 4.5V | 1.5V @ 250µA | 41 nC @ 10 V | ±12V | 1500 pF @ 10 V | - | 2.5W (Ta), 6.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI5441DC-T1-E3MOSFET P-CH 20V 3.9A 1206-8 |
2067 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.9A (Ta) | 2.5V, 4.5V | 55mOhm @ 3.9A, 4.5V | 1.4V @ 250µA | 22 nC @ 4.5 V | ±12V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI5441DC-T1-GE3MOSFET P-CH 20V 3.9A 1206-8 |
2049 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.9A (Ta) | 2.5V, 4.5V | 55mOhm @ 3.9A, 4.5V | 1.4V @ 250µA | 22 nC @ 4.5 V | ±12V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI5443DC-T1-E3MOSFET P-CH 20V 3.6A 1206-8 |
2045 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.6A (Ta) | 2.5V, 4.5V | 65mOhm @ 3.6A, 4.5V | 600mV @ 250µA (Min) | 14 nC @ 4.5 V | ±12V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI5443DC-T1-GE3MOSFET P-CH 20V 3.6A 1206-8 |
2075 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.6A (Ta) | 2.5V, 4.5V | 65mOhm @ 3.6A, 4.5V | 600mV @ 250µA (Min) | 14 nC @ 4.5 V | ±12V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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SI5445BDC-T1-GE3MOSFET P-CH 8V 5.2A 1206-8 |
2243 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8 V | 5.2A (Ta) | 1.8V, 4.5V | 33mOhm @ 5.2A, 4.5V | 1V @ 250µA | 21 nC @ 4.5 V | ±8V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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SI5449DC-T1-E3MOSFET P-CH 30V 3.1A 1206-8 |
2990 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.1A (Ta) | 2.5V, 4.5V | 85mOhm @ 3.1A, 4.5V | 600mV @ 250µA (Min) | 11 nC @ 4.5 V | ±12V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI5473DC-T1-GE3MOSFET P-CH 12V 5.9A 1206-8 |
2222 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 5.9A (Ta) | 1.8V, 4.5V | 27mOhm @ 5.9A, 4.5V | 1V @ 250µA | 32 nC @ 4.5 V | ±8V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI5475BDC-T1-E3MOSFET P-CH 12V 6A 1206-8 |
2139 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 6A (Ta) | 1.8V, 4.5V | 28mOhm @ 5.6A, 4.5V | 1V @ 250µA | 40 nC @ 8 V | ±8V | 1400 pF @ 6 V | - | 2.5W (Ta), 6.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI5475BDC-T1-GE3MOSFET P-CH 12V 6A 1206-8 |
2030 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 6A (Ta) | 1.8V, 4.5V | 28mOhm @ 5.6A, 4.5V | 1V @ 250µA | 40 nC @ 8 V | ±8V | 1400 pF @ 6 V | - | 2.5W (Ta), 6.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI5475DC-T1-E3MOSFET P-CH 12V 5.5A 1206-8 |
3731 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 5.5A (Ta) | 1.8V, 4.5V | 31mOhm @ 5.5A, 4.5V | 450mV @ 1mA (Min) | 29 nC @ 4.5 V | ±8V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI5475DC-T1-GE3MOSFET P-CH 12V 5.5A 1206-8 |
2565 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 5.5A (Ta) | 1.8V, 4.5V | 31mOhm @ 5.5A, 4.5V | 450mV @ 1mA (Min) | 29 nC @ 4.5 V | ±8V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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SI5479DU-T1-GE3MOSFET P-CH 12V 16A PPAK |
3633 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 16A (Tc) | 1.8V, 4.5V | 21mOhm @ 6.9A, 4.5V | 1V @ 250µA | 51 nC @ 8 V | ±8V | 1810 pF @ 6 V | - | 3.1W (Ta), 17.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI5480DU-T1-GE3MOSFET N-CH 30V 12A PPAK |
2469 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Tc) | 4.5V, 10V | 16mOhm @ 7.2A, 10V | 3V @ 250µA | 34 nC @ 10 V | ±20V | 1230 pF @ 15 V | - | 3.1W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI5481DU-T1-GE3MOSFET P-CH 20V 12A PPAK |
3447 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Tc) | 1.8V, 4.5V | 22mOhm @ 6.5A, 4.5V | 1V @ 250µA | 50 nC @ 8 V | ±8V | 1610 pF @ 10 V | - | 3.1W (Ta), 17.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
Запрос котировок
