Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSO080P03SNTMA1

Таблицы данных

BSO080P03SNTMA1

BSO080P03SNTMA1

MOSFET P-CH 30V 12.6A 8DSO

Infineon Technologies

3856 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 12.6A (Ta) 10V 8mOhm @ 14.9A, 10V 2.2V @ 250µA 136 nC @ 10 V ±25V 5890 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSO220N03MSGXUMA1

Таблицы данных

BSO220N03MSGXUMA1

BSO220N03MSGXUMA1

MOSFET N-CH 30V 7A 8DSO

Infineon Technologies

3394 1.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 22mOhm @ 8.6A, 10V 2.1V @ 250µA 10.4 nC @ 10 V ±20V 800 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS205NL6327HTSA1

Таблицы данных

BSS205NL6327HTSA1

BSS205NL6327HTSA1

MOSFET N-CH 20V 2.5A SOT23-3

Infineon Technologies

3401 0.00
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) 2.5V, 4.5V 50mOhm @ 2.5A, 4.5V 1.2V @ 11µA 3.2 nC @ 4.5 V ±12V 419 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD031N03M G

Таблицы данных

IPD031N03M G

IPD031N03M G

MOSFET N-CH 30V 90A TO252-3

Infineon Technologies

2822 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 3.1mOhm @ 30A, 10V 2.2V @ 250µA 51 nC @ 10 V ±20V 5300 pF @ 15 V - - -55°C ~ 175°C (TJ) Surface Mount
FDPF5N50NZF

Таблицы данных

FDPF5N50NZF

FDPF5N50NZF

MOSFET N-CH 500V 4.2A TO220F

onsemi

3907 0.00
- +

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Расследования

Tube UniFET-II™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.2A (Tc) 10V 1.75Ohm @ 2.1A, 10V 5V @ 250µA 12 nC @ 10 V ±25V 485 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF5N50NZU

Таблицы данных

FDPF5N50NZU

FDPF5N50NZU

MOSFET N-CH 500V 3.9A TO220F

onsemi

3071 0.00
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Tube,Tube,Tube UniFET-II™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3.9A (Tc) 10V 2Ohm @ 1.95A, 10V 5V @ 250µA 12 nC @ 10 V ±25V 485 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF8N50NZF

Таблицы данных

FDPF8N50NZF

FDPF8N50NZF

MOSFET N-CH 500V 7A TO220F

onsemi

3633 0.00
- +

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Расследования

Tube,Tube UniFET-II™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 7A (Tc) 10V 1Ohm @ 3.5A, 10V 5V @ 250µA 18 nC @ 10 V ±25V 735 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD60R380C6

Таблицы данных

IPD60R380C6

IPD60R380C6

MOSFET N-CH 600V 10.6A TO252-3

Infineon Technologies

2953 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R600C6BTMA1

Таблицы данных

IPD60R600C6BTMA1

IPD60R600C6BTMA1

MOSFET N-CH 600V 7.3A TO252-3

Infineon Technologies

3867 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R950C6

Таблицы данных

IPD60R950C6

IPD60R950C6

MOSFET N-CH 600V 4.4A TO252-3

Infineon Technologies

2476 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP60R380C6XKSA1

Таблицы данных

IPP60R380C6XKSA1

IPP60R380C6XKSA1

MOSFET N-CH 600V 10.6A TO220-3

Infineon Technologies

2777 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R600C6XKSA1

Таблицы данных

IPP60R600C6XKSA1

IPP60R600C6XKSA1

MOSFET N-CH 600V 7.3A TO220-3

Infineon Technologies

2458 1.00
- +

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Расследования

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R950C6XKSA1

Таблицы данных

IPP60R950C6XKSA1

IPP60R950C6XKSA1

MOSFET N-CH 600V 4.4A TO220-3

Infineon Technologies

75989 0.42
- +

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Расследования

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
DMG4712SSS-13

Таблицы данных

DMG4712SSS-13

DMG4712SSS-13

MOSFET N-CH 30V 11.2A 8SOP

Diodes Incorporated

447 0.35
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT),Digi-Reel® - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.2A (Ta) 4.5V, 10V 14mOhm @ 11.2A, 10V 2.2V @ 250µA 45.7 nC @ 10 V ±12V 2296 pF @ 15 V Schottky Diode (Body) 1.55W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NDD04N60Z-1G

Таблицы данных

NDD04N60Z-1G

NDD04N60Z-1G

MOSFET N-CH 600V 4.1A IPAK

onsemi

3960 1.00
- +

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Расследования

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.1A (Tc) 10V 2Ohm @ 2A, 10V 4.5V @ 50µA 29 nC @ 10 V ±30V 640 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDD05N50Z-1G

Таблицы данных

NDD05N50Z-1G

NDD05N50Z-1G

MOSFET N-CH 500V 4.7A IPAK

onsemi

650325 0.33
- +

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Расследования

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.7A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 18.5 nC @ 10 V ±30V 530 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTB6411ANG

Таблицы данных

NTB6411ANG

NTB6411ANG

MOSFET N-CH 100V 77A D2PAK

onsemi

3010 1.60
- +

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Расследования

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 77A (Tc) 10V 14mOhm @ 72A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3700 pF @ 25 V - 217W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTB6412ANG

Таблицы данных

NTB6412ANG

NTB6412ANG

MOSFET N-CH 100V 58A D2PAK

onsemi

9461 1.36
- +

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Расследования

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) 10V 18.2mOhm @ 58A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3500 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTB6413ANG

Таблицы данных

NTB6413ANG

NTB6413ANG

MOSFET N-CH 100V 42A D2PAK

onsemi

2425 0.97
- +

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Расследования

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 28mOhm @ 42A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 1800 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4860NA-1G

Таблицы данных

NTD4860NA-1G

NTD4860NA-1G

MOSFET N-CH 25V 10.4A/65A IPAK

onsemi

8325 0.17
- +

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Расследования

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 10.4A (Ta), 65A (Tc) - 7.5mOhm @ 30A, 10V 2.5V @ 250µA 21.8 nC @ 10 V - 1308 pF @ 12 V - 1.28W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
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