Грузовой вагон ( | Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IXFN180N07MOSFET N-CH 70V 180A SOT-227B |
2977 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 70 V | 180A (Tc) | 10V | 7mOhm @ 500mA, 10V | 4V @ 8mA | 480 nC @ 10 V | ±20V | 9000 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN180N10MOSFET N-CH 100V 180A SOT-227B |
2797 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 8mOhm @ 500mA, 10V | 4V @ 8mA | 360 nC @ 10 V | ±20V | 9100 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN23N100MOSFET N-CH 1000V 23A SOT-227B |
3054 | 0.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | - | 5V @ 8mA | - | ±20V | - | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN25N90MOSFET N-CH 900V 25A SOT-227B |
2878 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 25A (Tc) | 10V | 330mOhm @ 500mA, 10V | 5V @ 8mA | 240 nC @ 10 V | ±20V | 10800 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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IXFN32N60MOSFET N-CH 600V 32A SOT227B |
3228 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 250mOhm @ 500mA, 10V | 4.5V @ 8mA | 325 nC @ 10 V | ±20V | 9000 pF @ 25 V | - | 520AW (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN34N100MOSFET N-CH 1000V 34A SOT-227B |
3505 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 34A (Tc) | 10V | 280mOhm @ 500mA, 10V | 5.5V @ 8mA | 380 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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IXFN44N50QMOSFET N-CH 500V 44A SOT-227B |
3841 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™, Q Class | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 120mOhm @ 500mA, 10V | 4V @ 4mA | 190 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN44N50U2MOSFET N-CH 500V 44A SOT-227B |
2689 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 120mOhm @ 500mA, 10V | 4V @ 8mA | 270 nC @ 10 V | ±20V | 8400 pF @ 25 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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IXFN44N50U3MOSFET N-CH 500V 44A SOT-227B |
3925 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 120mOhm @ 500mA, 10V | 4V @ 8mA | 270 nC @ 10 V | ±20V | 8400 pF @ 25 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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IXFN48N50U2MOSFET N-CH 500V 48A SOT-227B |
3555 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 48A (Tc) | 10V | 100mOhm @ 500mA, 10V | 4V @ 8mA | 270 nC @ 10 V | ±20V | 8400 pF @ 25 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN48N50U3MOSFET N-CH 500V 48A SOT-227B |
2002 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 48A (Tc) | 10V | 100mOhm @ 500mA, 10V | 4V @ 8mA | 270 nC @ 10 V | ±20V | 8400 pF @ 25 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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IXFN48N55MOSFET N-CH 550V 48A SOT-227B |
3344 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 48A (Tc) | 10V | 110mOhm @ 500mA, 10V | 4.5V @ 8mA | 330 nC @ 10 V | ±20V | 8900 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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IXFN50N50MOSFET N-CH 500V 50A SOT-227B |
2713 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 50A (Tc) | 10V | 90mOhm @ 500mA, 10V | 4.5V @ 8mA | 330 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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IXFN80N48MOSFET N-CH 480V 80A SOT-227B |
3533 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 480 V | 80A (Tc) | 10V | 45mOhm @ 500mA, 10V | 4V @ 8mA | 380 nC @ 10 V | ±20V | 9890 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFP4N100QMOSFET N-CH 1000V 4A TO220AB |
3527 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™, Q Class | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 5V @ 1.5mA | 39 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFQ26N50MOSFET N-CH 500V 26A TO3P |
3038 | 0.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole |
|
Таблицы данных |
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IXFR100N25MOSFET N-CH 250V 87A ISOPLUS247 |
2606 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 87A (Tc) | 10V | 27mOhm @ 50A, 10V | 4V @ 8mA | 300 nC @ 10 V | ±20V | 9100 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR10N100QMOSFET N-CH 1000V 9A ISOPLUS247 |
3918 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™, Q Class | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 9A (Tc) | 10V | 1.2Ohm @ 5A, 10V | 5.5V @ 4mA | 90 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR12N100QMOSFET N-CH 1000V 10A ISOPLUS247 |
3770 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™, Q Class | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10A (Tc) | 10V | 1.1Ohm @ 6A, 10V | 5.5V @ 4mA | 90 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFR12N120PMOSFET N-CH 1200V ISOPLUS247 |
3098 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | - | - | - | - | - | - | - | - | - | - | Through Hole |
Запрос котировок
