Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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SI7483ADP-T1-GE3MOSFET P-CH 30V 14A PPAK SO-8 |
2157 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 5.7mOhm @ 24A, 10V | 3V @ 250µA | 180 nC @ 10 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI7485DP-T1-GE3MOSFET P-CH 20V 12.5A PPAK SO-8 |
2494 | 0.00 |
ДобавитьРасследования |
Cut Tape (CT),Digi-Reel® | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 12.5A (Ta) | - | 7.3mOhm @ 20A, 4.5V | 900mV @ 1mA | 150 nC @ 5 V | - | - | - | - | - | Surface Mount |
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Таблицы данных |
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SIA411DJ-T1-GE3MOSFET P-CH 20V 12A PPAK SC70-6 |
3999 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Tc) | 1.5V, 4.5V | 30mOhm @ 5.9A, 4.5V | 1V @ 250µA | 38 nC @ 8 V | ±8V | 1200 pF @ 10 V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BSS131L6327HTSA1MOSFET N-CH 240V 110MA SOT23-3 |
2512 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | SIPMOS® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 240 V | 110mA (Ta) | 4.5V, 10V | 14Ohm @ 100mA, 10V | 1.8V @ 56µA | 3.1 nC @ 10 V | ±20V | 77 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP065N03LGXKSA1MOSFET N-CH 30V 50A TO220-3 |
16000 | 0.37 |
ДобавитьРасследования |
Tube,Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 6.5mOhm @ 30A, 10V | 2.2V @ 250µA | 23 nC @ 10 V | ±20V | 2400 pF @ 15 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPP096N03L GMOSFET N-CH 30V 35A TO220-3 |
2562 | 0.00 |
ДобавитьРасследования |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 9.6mOhm @ 30A, 10V | 2.2V @ 250µA | 15 nC @ 10 V | ±20V | 1600 pF @ 15 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPP114N03L GMOSFET N-CH 30V 30A TO220-3 |
3274 | 0.00 |
ДобавитьРасследования |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 11.4mOhm @ 30A, 10V | 2.2V @ 250µA | 14 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
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IPP147N03L GMOSFET N-CH 30V 20A TO220-3 |
2687 | 0.00 |
ДобавитьРасследования |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 4.5V, 10V | 14.7mOhm @ 20A, 10V | 2.2V @ 250µA | 10 nC @ 10 V | ±20V | 1000 pF @ 15 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
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IRFSL4620PBFMOSFET N-CH 200V 24A TO262 |
3612 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 77.5mOhm @ 15A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±20V | 1710 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFSL5620PBFMOSFET N-CH 200V 24A TO262 |
3997 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 77.5mOhm @ 15A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±20V | 1710 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFU4620PBFMOSFET N-CH 200V 24A IPAK |
3149 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 78mOhm @ 15A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±20V | 1710 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRLSL3036PBFMOSFET N-CH 60V 195A TO262 |
3754 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11210 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPS031N03L GMOSFET N-CH 30V 90A TO251-3 |
3325 | 0.00 |
ДобавитьРасследования |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 3.1mOhm @ 30A, 10V | 2.2V @ 250µA | 51 nC @ 10 V | ±20V | 5300 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPS040N03LGBKMA1MOSFET N-CH 30V 90A TO251-3 |
3362 | 0.00 |
ДобавитьРасследования |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.2V @ 250µA | 38 nC @ 10 V | ±20V | 3900 pF @ 15 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPS050N03LGAKMA1MOSFET N-CH 30V 50A TO251-3 |
2836 | 0.00 |
ДобавитьРасследования |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31 nC @ 10 V | ±20V | 3200 pF @ 15 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
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IPS060N03LGAKMA1MOSFET N-CH 30V 50A TO251-3 |
6000 | 0.19 |
ДобавитьРасследования |
Tube,Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 23 nC @ 10 V | ±20V | 2400 pF @ 15 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
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IPS090N03LGAKMA1MOSFET N-CH 30V 40A TO251-3 |
2095 | 1.00 |
ДобавитьРасследования |
Tube,Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15 nC @ 10 V | ±20V | 1600 pF @ 15 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
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IPS105N03LGAKMA1MOSFET N-CH 30V 35A TO251-3 |
27000 | 0.17 |
ДобавитьРасследования |
Tube,Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 2.2V @ 250µA | 14 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
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IPS135N03LGAKMA1MOSFET N-CH 30V 30A TO251-3 |
3967 | 0.00 |
ДобавитьРасследования |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 13.5mOhm @ 30A, 10V | 2.2V @ 250µA | 10 nC @ 10 V | ±20V | 1000 pF @ 15 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPU039N03LGXKMOSFET N-CH 30V 50A TO251-3 |
3551 | 0.00 |
ДобавитьРасследования |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 3.9mOhm @ 30A, 10V | 2.2V @ 250µA | 51 nC @ 10 V | ±20V | 5300 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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