Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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NTD5413NT4GMOSFET N-CH 60V 30A DPAK |
3214 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Ta) | 10V | 26mOhm @ 20A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 1725 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
|
NTD5414NT4GMOSFET N-CH 60V 24A DPAK |
2098 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 24A (Ta) | 10V | 37mOhm @ 24A, 10V | 4V @ 250µA | 48 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTGS1135PT1GMOSFET P-CH 8V 4.6A 6TSOP |
17380 | 0.27 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8 V | 4.6A (Ta) | 1.2V, 4.5V | 31mOhm @ 4.6A, 4.5V | 850mV @ 250µA | 21 nC @ 4.5 V | ±6V | 2200 pF @ 6 V | - | 970mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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NTMFS4823NT3GMOSFET N-CH 30V 6.9A/30A 5DFN |
2848 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.9A (Ta), 30A (Tc) | 4.5V, 11.5V | 10.6mOhm @ 30A, 10V | 2.5V @ 250µA | 13 nC @ 11.5 V | ±20V | 795 pF @ 15 V | - | 860mW (Ta), 32.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FCD4N60TM_WSMOSFET N-CH 600V 3.9A DPAK |
3944 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.9A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 5V @ 250µA | 16.6 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI1067X-T1-GE3MOSFET P-CH 20V 1.06A SC89-6 |
3178 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.06A (Ta) | 1.8V, 4.5V | 150mOhm @ 1.06A, 4.5V | 950mV @ 250µA | 9.3 nC @ 5 V | ±8V | 375 pF @ 10 V | - | 236mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI4398DY-T1-GE3MOSFET N-CH 20V 19A 8SO |
2058 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 19A (Ta) | 4.5V, 10V | 2.8mOhm @ 25A, 10V | 3V @ 250µA | 50 nC @ 4.5 V | ±20V | 5620 pF @ 10 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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SIA443DJ-T1-GE3MOSFET P-CH 20V 9A PPAK SC70-6 |
2754 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 9A (Tc) | 1.8V, 4.5V | 45mOhm @ 4.7A, 4.5V | 1V @ 250µA | 25 nC @ 8 V | ±8V | 750 pF @ 10 V | - | 3.3W (Ta), 15W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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SIA450DJ-T1-GE3MOSFET N-CH 240V 1.52A PPAK |
3597 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 240 V | 1.52A (Tc) | 2.5V, 10V | 2.9Ohm @ 700mA, 10V | 2.4V @ 250µA | 7.04 nC @ 10 V | ±20V | 167 pF @ 120 V | - | 3.3W (Ta), 15W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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SIA810DJ-T1-GE3MOSFET N-CH 20V 4.5A PPAK SC70-6 |
3721 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | LITTLE FOOT® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.5A (Tc) | 1.8V, 4.5V | 53mOhm @ 3.7A, 4.5V | 1V @ 250µA | 11.5 nC @ 8 V | ±8V | 400 pF @ 10 V | Schottky Diode (Isolated) | 1.9W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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SIA811DJ-T1-GE3MOSFET P-CH 20V 4.5A PPAK SC70-6 |
3815 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | LITTLE FOOT® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.5A (Tc) | 1.8V, 4.5V | 94mOhm @ 2.8A, 4.5V | 1V @ 250µA | 13 nC @ 8 V | ±8V | 355 pF @ 10 V | Schottky Diode (Isolated) | 1.9W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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SIB412DK-T1-GE3MOSFET N-CH 20V 9A PPAK SC75-6 |
3914 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 9A (Tc) | 1.8V, 4.5V | 34mOhm @ 6.6A, 4.5V | 1V @ 250µA | 10.16 nC @ 5 V | ±8V | 535 pF @ 10 V | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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SI1046R-T1-GE3MOSFET N-CH 20V SC75A |
2124 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 606mA ( Ta) | 1.8V, 4.5V | 420mOhm @ 606mA, 4.5V | 950mV @ 250µA | 1.49 nC @ 5 V | ±8V | 66 pF @ 10 V | - | 250mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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SI1046X-T1-GE3MOSFET N-CH 20V SC89-3 |
2876 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 606mA ( Ta) | 1.8V, 4.5V | 420mOhm @ 606mA, 4.5V | 950mV @ 250µA | 1.49 nC @ 5 V | ±8V | 66 pF @ 10 V | - | 250mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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SI1051X-T1-GE3MOSFET P-CH 8V 1.2A SC89-6 |
2011 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8 V | 1.2A (Ta) | 1.5V, 4.5V | 122mOhm @ 1.2A, 4.5V | 1V @ 250µA | 9.45 nC @ 5 V | ±5V | 560 pF @ 4 V | - | 236mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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SI1054X-T1-GE3MOSFET N-CH 12V 1.32A SC89-6 |
3426 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 1.32A (Ta) | 1.8V, 4.5V | 95mOhm @ 1.32A, 4.5V | 1V @ 250µA | 8.57 nC @ 5 V | ±8V | 480 pF @ 6 V | - | 236mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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SI1069X-T1-GE3MOSFET P-CH 20V 0.94A SC89-6 |
3096 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 940mA (Ta) | 2.5V, 4.5V | 184mOhm @ 940mA, 4.5V | 1.5V @ 250µA | 6.86 nC @ 5 V | ±12V | 308 pF @ 10 V | - | 236mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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SI1073X-T1-GE3MOSFET P-CH 30V 0.98A SC89-6 |
3202 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 980mA (Ta) | 4.5V, 10V | 173mOhm @ 980mA, 10V | 3V @ 250µA | 9.45 nC @ 10 V | ±20V | 265 pF @ 15 V | - | 236mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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SI2305ADS-T1-GE3MOSFET P-CH 8V 5.4A SOT23-3 |
2724 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8 V | 5.4A (Tc) | 1.8V, 4.5V | 40mOhm @ 4.1A, 4.5V | 800mV @ 250µA | 15 nC @ 4.5 V | ±8V | 740 pF @ 4 V | - | 960mW (Ta), 1.7W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
SI5406CDC-T1-GE3MOSFET N-CH 12V 6A 1206-8 |
2013 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 6A (Tc) | 1.8V, 4.5V | 20mOhm @ 6.5A, 4.5V | 1V @ 250µA | 32 nC @ 8 V | ±8V | 1100 pF @ 6 V | - | 2.3W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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