Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NTD4806NA-1GMOSFET N-CH 30V 11.3A/79A IPAK |
10350 | 0.10 |
ДобавитьРасследования |
Tube,Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.3A (Ta), 79A (Tc) | - | 6mOhm @ 30A, 10V | 2.5V @ 250µA | 23 nC @ 4.5 V | - | 2142 pF @ 12 V | - | - | - | Through Hole |
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NTD4806NA-35GMOSFET N-CH 30V 11.3A/79A IPAK |
2989 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.3A (Ta), 79A (Tc) | - | 6mOhm @ 30A, 10V | 2.5V @ 250µA | 23 nC @ 4.5 V | - | 2142 pF @ 12 V | - | - | - | Through Hole |
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NTD4806NAT4GMOSFET N-CH 30V 11.3A/79A DPAK |
7500 | 0.23 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.3A (Ta), 79A (Tc) | - | 6mOhm @ 30A, 10V | 2.5V @ 250µA | 23 nC @ 4.5 V | - | 2142 pF @ 12 V | - | - | - | Surface Mount |
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Таблицы данных |
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NTD4808N-1GMOSFET N-CH 30V 10A/63A IPAK |
2443 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta), 63A (Tc) | 4.5V, 11.5V | 8mOhm @ 30A, 10V | 2.5V @ 250µA | 13 nC @ 4.5 V | ±20V | 1538 pF @ 12 V | - | 1.4W (Ta), 54.6W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTD4808N-35GMOSFET N-CH 30V 10A/63A IPAK |
7105 | 0.10 |
ДобавитьРасследования |
Tube,Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta), 63A (Tc) | 4.5V, 11.5V | 8mOhm @ 30A, 10V | 2.5V @ 250µA | 13 nC @ 4.5 V | ±20V | 1538 pF @ 12 V | - | 1.4W (Ta), 54.6W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTD4808NT4GMOSFET N-CH 30V 10A/63A DPAK |
22486 | 0.20 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta), 63A (Tc) | 4.5V, 11.5V | 8mOhm @ 30A, 10V | 2.5V @ 250µA | 13 nC @ 4.5 V | ±20V | 1538 pF @ 12 V | - | 1.4W (Ta), 54.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTD4809N-1GMOSFET N-CH 30V 9.6A/58A IPAK |
6748 | 0.09 |
ДобавитьРасследования |
Tube,Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 13 nC @ 4.5 V | ±20V | 1456 pF @ 12 V | - | 1.4W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTD4809N-35GMOSFET N-CH 30V 9.6A/58A IPAK |
62400 | 0.20 |
ДобавитьРасследования |
Tube,Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 13 nC @ 4.5 V | ±20V | 1456 pF @ 12 V | - | 1.4W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTD4809NA-1GMOSFET N-CH 30V 9.6A/58A IPAK |
86000 | 0.09 |
ДобавитьРасследования |
Tube,Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 13 nC @ 4.5 V | ±20V | 1456 pF @ 12 V | - | 1.3W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTD4809NA-35GMOSFET N-CH 30V 9.6A/58A IPAK |
2840 | 0.19 |
ДобавитьРасследования |
Tube,Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 13 nC @ 4.5 V | ±20V | 1456 pF @ 12 V | - | 1.3W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTD4809NAT4GMOSFET N-CH 30V 9.6A/58A DPAK |
193200 | 0.20 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 13 nC @ 4.5 V | ±20V | 1456 pF @ 12 V | - | 1.3W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTD4809NH-1GMOSFET N-CH 30V 9.6A/58A IPAK |
3624 | 0.18 |
ДобавитьРасследования |
Tube,Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 15 nC @ 4.5 V | ±20V | 2155 pF @ 12 V | - | 1.3W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTD4809NH-35GMOSFET N-CH 30V 9.6A/58A IPAK |
58847 | 0.18 |
ДобавитьРасследования |
Tube,Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 15 nC @ 4.5 V | ±20V | 2155 pF @ 12 V | - | 1.3W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTD4810NH-1GMOSFET N-CH 30V 9A/54A IPAK |
3665 | 0.14 |
ДобавитьРасследования |
Tube,Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta), 54A (Tc) | 4.5V, 11.5V | 10mOhm @ 30A, 10V | 2.5V @ 250µA | 12 nC @ 4.5 V | ±20V | 1225 pF @ 12 V | - | 1.28W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTD4810NH-35GMOSFET N-CH 30V 9A/54A IPAK |
3250 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta), 54A (Tc) | 4.5V, 11.5V | 10mOhm @ 30A, 10V | 2.5V @ 250µA | 12 nC @ 4.5 V | ±20V | 1225 pF @ 12 V | - | 1.28W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTD4810NHT4GMOSFET N-CH 30V 9A/54A DPAK |
5000 | 0.27 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta), 54A (Tc) | 4.5V, 11.5V | 10mOhm @ 30A, 10V | 2.5V @ 250µA | 12 nC @ 4.5 V | ±20V | 1225 pF @ 12 V | - | 1.28W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTD4813N-1GMOSFET N-CH 30V 7.6A/40A IPAK |
6645 | 0.17 |
ДобавитьРасследования |
Tube,Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.6A (Ta), 40A (Tc) | 4.5V, 11.5V | 13mOhm @ 30A, 10V | 2.5V @ 250µA | 7.9 nC @ 4.5 V | ±20V | 860 pF @ 12 V | - | 1.27W (Ta), 35.3W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTD4813N-35GMOSFET N-CH 30V 7.6A/40A IPAK |
6150 | 0.18 |
ДобавитьРасследования |
Tube,Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.6A (Ta), 40A (Tc) | 4.5V, 11.5V | 13mOhm @ 30A, 10V | 2.5V @ 250µA | 7.9 nC @ 4.5 V | ±20V | 860 pF @ 12 V | - | 1.27W (Ta), 35.3W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTD4813NH-1GMOSFET N-CH 30V 7.6A/40A IPAK |
2919 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.6A (Ta), 40A (Tc) | 4.5V, 11.5V | 13mOhm @ 30A, 10V | 2.5V @ 250µA | 10 nC @ 4.5 V | ±20V | 940 pF @ 12 V | - | 1.27W (Ta), 35.3W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTD4813NH-35GMOSFET N-CH 30V 7.6A/40A IPAK |
14455 | 0.17 |
ДобавитьРасследования |
Tube,Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.6A (Ta), 40A (Tc) | 4.5V, 11.5V | 13mOhm @ 30A, 10V | 2.5V @ 250µA | 10 nC @ 4.5 V | ±20V | 940 pF @ 12 V | - | 1.27W (Ta), 35.3W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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