Transistors - FETs, MOSFETs - Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	А	Packaging	Series	ProductStatus	FETType	Technology	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	DriveVoltage(MaxRdsOnMinRdsOn)	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	Vgs(Max)	InputCapacitance(Ciss)(Max)@Vds	FETFeature	PowerDissipation(Max)	OperatingTemperature	MountingType
Таблицы данных	NDP7050L MOSFET N-CH 50V 75A TO220-3 onsemi	3576	- + Добавить Расследования	Tube	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	50 V	75A (Tc)	5V	15mOhm @ 37.5A, 5V	2V @ 250µA	115 nC @ 5 V	±20V	4000 pF @ 25 V	-	150W (Tc)	-65°C ~ 175°C (TJ)	Through Hole
Таблицы данных	NDP7060 MOSFET N-CH 60V 75A TO220-3 onsemi	3900	- + Добавить Расследования	Tube	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	75A (Tc)	10V	13mOhm @ 40A, 10V	4V @ 250µA	115 nC @ 10 V	±20V	3600 pF @ 25 V	-	150W (Tc)	-65°C ~ 175°C (TJ)	Through Hole
Таблицы данных	NDP7060L MOSFET N-CH 60V 75A TO220-3 onsemi	2771	- + Добавить Расследования	Tube	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	75A (Tc)	-	15mOhm @ 37.5A, 5V	2V @ 250µA	115 nC @ 5 V	-	4000 pF @ 25 V	-	-	-	Through Hole
	BSS100 MOSFET N-CH 100V 220MA TO92-3 onsemi	2156	- + Добавить Расследования	Bulk	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	220mA (Ta)	-	6Ohm @ 220mA, 10V	2V @ 1mA	2 nC @ 10 V	-	60 pF @ 25 V	-	-	-	Through Hole
Таблицы данных	IRL3103D1S MOSFET N-CH 30V 64A D2PAK Infineon Technologies	2465	- + Добавить Расследования	Tube	FETKY™	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	64A (Tc)	4.5V, 10V	14mOhm @ 34A, 10V	1V @ 250µA	43 nC @ 4.5 V	±16V	1900 pF @ 25 V	-	3.1W (Ta), 89W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
Таблицы данных	IRL3103S MOSFET N-CH 30V 64A D2PAK Infineon Technologies	3857	- + Добавить Расследования	Tube	HEXFET®	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	64A (Tc)	4.5V, 10V	12mOhm @ 34A, 10V	1V @ 250µA	33 nC @ 4.5 V	±16V	1650 pF @ 25 V	-	94W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
Таблицы данных	IRL3303S MOSFET N-CH 30V 38A D2PAK Infineon Technologies	3892	- + Добавить Расследования	Tube	HEXFET®	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	38A (Tc)	4.5V, 10V	26mOhm @ 20A, 10V	1V @ 250µA	26 nC @ 4.5 V	±16V	870 pF @ 25 V	-	3.8W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
Таблицы данных	IRL3803S MOSFET N-CH 30V 140A D2PAK Infineon Technologies	3886	- + Добавить Расследования	Tube	HEXFET®	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	140A (Tc)	4.5V, 10V	6mOhm @ 71A, 10V	1V @ 250µA	140 nC @ 4.5 V	±16V	5000 pF @ 25 V	-	3.8W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
Таблицы данных	IXFT58N20Q MOSFET N-CH 200V 58A TO268 IXYS	3756	- + Добавить Расследования	Tube	HiPerFET™	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	58A (Tc)	10V	40mOhm @ 29A, 10V	4V @ 4mA	140 nC @ 10 V	±20V	3600 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
Таблицы данных	IRFI830G MOSFET N-CH 500V 3.1A TO220-3 Vishay Siliconix	3122	- + Добавить Расследования	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	500 V	3.1A (Tc)	10V	1.5Ohm @ 1.9A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	610 pF @ 25 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
	IRFR9210 MOSFET P-CH 200V 1.9A DPAK Vishay Siliconix	2343	- + Добавить Расследования	Tube	-	Obsolete	P-Channel	MOSFET (Metal Oxide)	200 V	1.9A (Tc)	10V	3Ohm @ 1.1A, 10V	4V @ 250µA	8.9 nC @ 10 V	±20V	170 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
	FB180SA10 MOSFET N-CH 100V 180A SOT-227 Vishay General Semiconductor - Diodes Division	2350	- + Добавить Расследования	Tube	HEXFET®	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	180A (Tc)	10V	6.5mOhm @ 108A, 10V	4V @ 250µA	380 nC @ 10 V	±20V	10700 pF @ 25 V	-	480W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount
Таблицы данных	IRF614S MOSFET N-CH 250V 2.7A D2PAK Vishay Siliconix	2720	- + Добавить Расследования	Tube	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	250 V	2.7A (Tc)	10V	2Ohm @ 1.6A, 10V	4V @ 250µA	8.2 nC @ 10 V	±20V	140 pF @ 25 V	-	3.1W (Ta), 36W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
Таблицы данных	IRF624S MOSFET N-CH 250V 4.4A D2PAK Vishay Siliconix	2549	- + Добавить Расследования	Tube	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	250 V	4.4A (Tc)	10V	1.1Ohm @ 2.6A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	260 pF @ 25 V	-	3.1W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
	IRF634S MOSFET N-CH 250V 8.1A D2PAK Vishay Siliconix	2587	- + Добавить Расследования	Tube	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	250 V	8.1A (Tc)	10V	450mOhm @ 5.1A, 10V	4V @ 250µA	41 nC @ 10 V	±20V	770 pF @ 25 V	-	3.1W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
	IRF644S MOSFET N-CH 250V 14A D2PAK Vishay Siliconix	3286	- + Добавить Расследования	Tube	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	250 V	14A (Tc)	10V	280mOhm @ 8.4A, 10V	4V @ 250µA	68 nC @ 10 V	±20V	1300 pF @ 25 V	-	3.1W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
	IRF710S MOSFET N-CH 400V 2A D2PAK Vishay Siliconix	2670	- + Добавить Расследования	Tube	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	400 V	2A (Tc)	10V	3.6Ohm @ 1.2A, 10V	4V @ 250µA	17 nC @ 10 V	±20V	170 pF @ 25 V	-	3.1W (Ta), 36W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
Таблицы данных	IRF720S MOSFET N-CH 400V 3.3A D2PAK Vishay Siliconix	3490	- + Добавить Расследования	Tube	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	400 V	3.3A (Tc)	10V	1.8Ohm @ 2A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	410 pF @ 25 V	-	3.1W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
Таблицы данных	IRF730S MOSFET N-CH 400V 5.5A D2PAK Vishay Siliconix	3442	- + Добавить Расследования	Tube	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	400 V	5.5A (Tc)	10V	1Ohm @ 3.3A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	700 pF @ 25 V	-	3.1W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
Таблицы данных	IRF740S MOSFET N-CH 400V 10A D2PAK Vishay Siliconix	2739	- + Добавить Расследования	Tube	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	400 V	10A (Tc)	10V	550mOhm @ 6A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1400 pF @ 25 V	-	3.1W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount

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