Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRFZ46ZSTRLPBFMOSFET N-CH 55V 51A D2PAK |
3434 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 10V | 13.6mOhm @ 31A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS6670ASMOSFET N-CH 30V 13.5A 8SOIC |
2497 | 0.93 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench®, SyncFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.5A (Ta) | 4.5V, 10V | 9mOhm @ 13.5A, 10V | 3V @ 1mA | 38 nC @ 10 V | ±20V | 1540 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TK35E08N1,S1XMOSFET N-CH 80V 55A TO220 |
3573 | 0.93 |
ДобавитьРасследования |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 55A (Tc) | 10V | 12.2mOhm @ 17.5A, 10V | 4V @ 300µA | 25 nC @ 10 V | ±20V | 1700 pF @ 40 V | - | 72W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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DMTH10H4M6SPS-13MOSFET BVDSS: 61V~100V POWERDI50 |
3564 | 0.93 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Ta), 100A (Tc) | 10V | 4.6mOhm @ 30A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 4327 pF @ 50 V | - | 2.7W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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DMTH84M1SPS-13MOSFET BVDSS: 61V~100V POWERDI50 |
3103 | 0.93 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 4mOhm @ 20A, 10V | 4V @ 250µA | - | ±20V | 4209 pF @ 40 V | - | 1.6W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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DMTH8004LPS-13MOSFET BVDSS: 61V~100V POWERDI50 |
2821 | 0.93 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.8V @ 250µA | 81 nC @ 10 V | ±20V | 4979 pF @ 40 V | - | 1.5W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SI7114DN-T1-GE3MOSFET N-CH 30V 11.7A PPAK1212-8 |
2797 | 0.93 |
ДобавитьРасследования |
Tape & Reel (TR),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.7A (Ta) | 4.5V, 10V | 7.5mOhm @ 18.3A, 10V | 3V @ 250µA | 19 nC @ 4.5 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NVTYS008N06CLTWGT6 60V N-CH LL IN LFPAK33 |
3520 | 0.93 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Ta), 63A (Tc) | 4.5V, 10V | 8mOhm @ 9A, 10V | 2.2V @ 50µA | 17 nC @ 10 V | ±20V | 1230 pF @ 25 V | - | 3.2W (Ta), 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPD30N08S222ATMA1MOSFET N-CH 75V 30A TO252-3 |
3208 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 30A (Tc) | 10V | 21.5mOhm @ 50A, 10V | 4V @ 80µA | 57 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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TK7P60W,RVQMOSFET N CH 600V 7A DPAK |
3481 | 0.94 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Ta) | 10V | 600mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15 nC @ 10 V | ±30V | 490 pF @ 300 V | Super Junction | 60W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STD5N60M2MOSFET N-CH 600V 3.5A DPAK |
3783 | 0.94 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.5A (Tc) | 10V | 1.4Ohm @ 1.7A, 10V | 4V @ 250µA | 8.5 nC @ 10 V | ±25V | 211 pF @ 100 V | - | 45W (Tc) | 150°C (TJ) | Surface Mount |
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NTMFS5C670NT1GMOSFET N-CH 60V 17A/71A 5DFN |
2469 | 0.94 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Ta), 71A (Tc) | 10V | 7mOhm @ 11A, 10V | 4V @ 53µA | 14.4 nC @ 10 V | ±20V | 1035 pF @ 30 V | - | 3.6W (Ta), 61W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPAN65R650CEXKSA1MOSFET N-CH 650V 10.1A TO220 |
2998 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.1A (Tc) | 10V | 650mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23 nC @ 10 V | ±20V | 440 pF @ 100 V | Super Junction | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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ATP302-TL-HMOSFET P-CH 60V 70A ATPAK |
3582 | 2.05 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 70A (Ta) | 4.5V, 10V | 13mOhm @ 35A, 10V | - | 115 nC @ 10 V | ±20V | 5400 pF @ 20 V | - | 70W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AOT7S60LMOSFET N-CH 600V 7A TO220 |
2915 | 0.94 |
ДобавитьРасследования |
Tube | aMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2 nC @ 10 V | ±30V | 372 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AOTF7S60LMOSFET N-CH 600V 7A TO220-3F |
3829 | 0.94 |
ДобавитьРасследования |
Tube | aMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2 nC @ 10 V | ±30V | 372 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPU80R750P7AKMA1MOSFET N-CH 800V 7A TO251-3 |
2401 | 0.94 |
ДобавитьРасследования |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 750mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17 nC @ 10 V | ±20V | 460 pF @ 500 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPS80R750P7AKMA1MOSFET N-CH 800V 7A TO251-3 |
2880 | 0.71 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 750mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17 nC @ 10 V | ±20V | 460 pF @ 500 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP70N04S406AKSA1MOSFET N-CH 40V 70A TO220-3-1 |
2518 | 0.94 |
ДобавитьРасследования |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 10V | 6.5mOhm @ 70A, 10V | 4V @ 26µA | 32 nC @ 10 V | ±20V | 2550 pF @ 25 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF9Z14LPBFMOSFET P-CH 60V 6.7A I2PAK |
3386 | 0.94 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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