Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
ZVN4306GVTA

Таблицы данных

ZVN4306GVTA

ZVN4306GVTA

MOSFET N-CH 60V 2.1A SOT223

Diodes Incorporated

2837 0.84
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 2.1A (Ta) 5V, 10V 330mOhm @ 3A, 10V 3V @ 1mA - ±20V 350 pF @ 25 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
STU5N70M6-S

Таблицы данных

STU5N70M6-S

STU5N70M6-S

MOSFET N-CH 700V 3.5A IPAK

STMicroelectronics

2970 0.84
- +

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Расследования

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 700 V 3.5A (Tc) 10V 1.4Ohm @ 1.75A, 10V 3.75V @ 250µA 5.1 nC @ 10 V ±25V 170 pF @ 100 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU80R900P7AKMA1

Таблицы данных

IPU80R900P7AKMA1

IPU80R900P7AKMA1

MOSFET N-CH 800V 6A TO251-3

Infineon Technologies

5489 0.63
- +

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Расследования

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 2.2A, 10V 3.5V @ 110µA 15 nC @ 10 V ±20V 350 pF @ 500 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPS80R900P7AKMA1

Таблицы данных

IPS80R900P7AKMA1

IPS80R900P7AKMA1

MOSFET N-CH 800V 6A TO251-3

Infineon Technologies

2342 1.00
- +

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Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 2.2A, 10V 3.5V @ 110µA 15 nC @ 10 V ±20V 350 pF @ 500 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
RZY200P01TL

Таблицы данных

RZY200P01TL

RZY200P01TL

MOSFET P-CH 12V 20A TCPT3

Rohm Semiconductor

2799 0.85
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 12 V 20A (Ta) - - - - ±10V - - 20W (Tc) 150°C (TJ) Surface Mount
SIHF9540S-GE3

Таблицы данных

SIHF9540S-GE3

SIHF9540S-GE3

MOSFET P-CH 100V 19A D2PAK

Vishay Siliconix

2967 0.85
- +

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Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQD40030E_GE3

Таблицы данных

SQD40030E_GE3

SQD40030E_GE3

MOSFET N-CHANNEL 40V TO252AA

Vishay Siliconix

2440 0.85
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V - - 65 nC @ 10 V - - - - 175°C (TJ) Surface Mount
BUK7215-55A,118

Таблицы данных

BUK7215-55A,118

BUK7215-55A,118

MOSFET N-CH 55V 55A DPAK

Nexperia USA Inc.

2633 0.85
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 55A (Tc) 10V 15mOhm @ 25A, 10V 4V @ 1mA 50 nC @ 10 V ±20V 2107 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFS5C673NWFT1G NVMFS5C673NWFT1G

NVMFS5C673NWFT1G

MOSFET N-CH 60V 14A/50A 5DFN

onsemi

3298 0.85
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Ta), 50A (Tc) 10V 10.7mOhm @ 7A, 10V 4V @ 35µA 9.6 nC @ 10 V ±20V 680 pF @ 30 V - 3.6W (Ta), 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOW10N65

Таблицы данных

AOW10N65

AOW10N65

MOSFET N-CH 650V 10A TO262

Alpha & Omega Semiconductor Inc.

3170 0.85
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 1Ohm @ 5A, 10V 4.5V @ 250µA 33 nC @ 10 V ±30V 1645 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOW12N50

Таблицы данных

AOW12N50

AOW12N50

MOSFET N-CH 500V 12A TO262

Alpha & Omega Semiconductor Inc.

3956 0.85
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 520mOhm @ 6A, 10V 4.5V @ 250µA 37 nC @ 10 V ±30V 1633 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVD5C460NT4G

Таблицы данных

NVD5C460NT4G

NVD5C460NT4G

MOSFET N-CH 40V 18A/70A DPAK

onsemi

2269 0.85
- +

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Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta), 70A (Tc) 10V 4.9mOhm @ 25A, 10V 4V @ 60µA 26 nC @ 10 V ±20V 1600 pF @ 25 V - 3W (Ta), 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVTFWS004N04CTAG

Таблицы данных

NVTFWS004N04CTAG

NVTFWS004N04CTAG

MOSFET N-CH 40V 18A/77A 8WDFN

onsemi

3478 0.85
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta), 77A (Tc) 10V 4.9mOhm @ 35A, 10V 3.5V @ 50µA 18 nC @ 10 V ±20V 1150 pF @ 25 V - 3.2W (Ta), 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTTFS5CS73NLTAG NTTFS5CS73NLTAG

NTTFS5CS73NLTAG

T6 60V NCH LL IN U8FL

onsemi

2581 1.00
- +

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Расследования

Tape & Reel (TR),Bulk * Active - - - - - - - - - - - - - -
TJ50S06M3L(T6L1,NQ

Таблицы данных

TJ50S06M3L(T6L1,NQ

TJ50S06M3L(T6L1,NQ

MOSFET P-CH 60V 50A DPAK

Toshiba Semiconductor and Storage

2474 0.86
- +

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Расследования

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 50A (Ta) 6V, 10V 13.8mOhm @ 25A, 10V 3V @ 1mA 124 nC @ 10 V +10V, -20V 6290 pF @ 10 V - 90W (Tc) 175°C (TJ) Surface Mount
IPL65R1K0C6SATMA1

Таблицы данных

IPL65R1K0C6SATMA1

IPL65R1K0C6SATMA1

MOSFET N-CH 650V 4.2A THIN-PAK

Infineon Technologies

2625 1.00
- +

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Tape & Reel (TR),Bulk CoolMOS™ C6 Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 4.2A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 150µA 15 nC @ 10 V ±20V 328 pF @ 100 V - 34.7W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SIHD6N65ET1-GE3

Таблицы данных

SIHD6N65ET1-GE3

SIHD6N65ET1-GE3

MOSFET N-CH 650V 7A TO252AA

Vishay Siliconix

3705 0.86
- +

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Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD6N65ET4-GE3

Таблицы данных

SIHD6N65ET4-GE3

SIHD6N65ET4-GE3

MOSFET N-CH 650V 7A TO252AA

Vishay Siliconix

2651 0.86
- +

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Расследования

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD6N65ET5-GE3

Таблицы данных

SIHD6N65ET5-GE3

SIHD6N65ET5-GE3

MOSFET N-CH 650V 7A TO252AA

Vishay Siliconix

2137 0.86
- +

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Расследования

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM038N03PQ33 RGG

Таблицы данных

TSM038N03PQ33 RGG

TSM038N03PQ33 RGG

MOSFET N-CH 30V 78A 8PDFN

Taiwan Semiconductor Corporation

2733 0.86
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 78A (Tc) 4.5V, 10V 3.8mOhm @ 19A, 10V 2.5V @ 250µA 25 nC @ 4.5 V ±20V 2557 pF @ 15 V - 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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