Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
DMP3007SPSQ-13

Таблицы данных

DMP3007SPSQ-13

DMP3007SPSQ-13

MOSFET 25V~30V POWERDI5060-8

Diodes Incorporated

3488 0.56
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Tape & Reel (TR) - Active - - - 90A (Tc) - - - - - - - - - -
DMP4025LSSQ-13

Таблицы данных

DMP4025LSSQ-13

DMP4025LSSQ-13

MOSFET P-CH 40V 6A 8SO

Diodes Incorporated

3283 0.56
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Tape & Reel (TR) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 40 V 6A (Ta) 4.5V, 10V 25mOhm @ 3A, 10V 1.8V @ 250µA 33.7 nC @ 10 V ±20V 1640 pF @ 20 V - 1.52W (Ta) -55°C ~ 150°C (TJ) Surface Mount
STD30NF06LAG

Таблицы данных

STD30NF06LAG

STD30NF06LAG

MOSFET N-CH 60V 28A DPAK

STMicroelectronics

3949 0.56
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Tape & Reel (TR) STripFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) - - - - - - - - - Surface Mount
IRLR3410TRRPBF

Таблицы данных

IRLR3410TRRPBF

IRLR3410TRRPBF

MOSFET N-CH 100V 17A DPAK

Infineon Technologies

3895 0.56
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Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V 800 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR812TRPBF

Таблицы данных

IRFR812TRPBF

IRFR812TRPBF

MOSFET N-CH 500V 3.6A DPAK

Infineon Technologies

3631 0.56
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 5V @ 250µA 20 nC @ 10 V ±20V 810 pF @ 25 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMP65H11D0HSS-13

Таблицы данных

DMP65H11D0HSS-13

DMP65H11D0HSS-13

MOSFET BVDSS: 501V~650V SO-8 T&R

Diodes Incorporated

2469 0.56
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Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 600 V 270mA (Ta) 10V 11Ohm @ 270mA, 10V 4V @ 250µA 13 nC @ 10 V ±30V 670 pF @ 25 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMTH6005LFG-13

Таблицы данных

DMTH6005LFG-13

DMTH6005LFG-13

MOSFET N-CH 60V 19.7A/100A PWRDI

Diodes Incorporated

3452 0.56
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 19.7A (Ta), 100A (Tc) 4.5V, 10V 4.1mOhm @ 20A, 10V 2.5V @ 250µA 48.7 nC @ 10 V ±20V 3150 pF @ 30 V - 2.38W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMTH6005LFG-7

Таблицы данных

DMTH6005LFG-7

DMTH6005LFG-7

MOSFET N-CH 60V 19.7A/100A PWRDI

Diodes Incorporated

3853 0.56
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 19.7A (Ta), 100A (Tc) 4.5V, 10V 4.1mOhm @ 20A, 10V 2.5V @ 250µA 48.7 nC @ 10 V ±20V 3150 pF @ 30 V - 2.38W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU024NPBF

Таблицы данных

IRFU024NPBF

IRFU024NPBF

MOSFET N-CH 55V 17A IPAK

Infineon Technologies

2908 1.00
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Bulk,Tube HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK5P60W5,RVQ TK5P60W5,RVQ

TK5P60W5,RVQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

2983 0.54
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Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Ta) 10V 990mOhm @ 2.3A, 10V 4.5V @ 230µA 11.5 nC @ 10 V ±30V 370 pF @ 300 V - 60W (Tc) 150°C Surface Mount
VN10KN3-G-P003

Таблицы данных

VN10KN3-G-P003

VN10KN3-G-P003

MOSFET N-CH 60V 310MA TO92-3

Microchip Technology

2191 0.56
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 310mA (Tj) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 1mA - ±30V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN10KN3-G-P013

Таблицы данных

VN10KN3-G-P013

VN10KN3-G-P013

MOSFET N-CH 60V 310MA TO92-3

Microchip Technology

2005 0.56
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Tape & Box (TB) - Active N-Channel MOSFET (Metal Oxide) 60 V 310mA (Tj) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 1mA - ±30V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN10KN3-G-P014

Таблицы данных

VN10KN3-G-P014

VN10KN3-G-P014

MOSFET N-CH 60V 310MA TO92-3

Microchip Technology

3453 0.56
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Tape & Box (TB) - Active N-Channel MOSFET (Metal Oxide) 60 V 310mA (Tj) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 1mA - ±30V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI5441BDC-T1-GE3

Таблицы данных

SI5441BDC-T1-GE3

SI5441BDC-T1-GE3

MOSFET P-CH 20V 4.4A 1206-8

Vishay Siliconix

3251 1.23
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 2.5V, 4.5V 45mOhm @ 4.4A, 4.5V 1.4V @ 250µA 22 nC @ 4.5 V ±12V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC8015L-L701

Таблицы данных

FDMC8015L-L701

FDMC8015L-L701

FET 40V 26.0 MOHM MLP33

onsemi

3895 0.56
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Tape & Reel (TR) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 7A (Ta), 18A (Tc) 4.5V, 10V 26mOhm @ 7A, 10V 3V @ 250µA 19 nC @ 10 V ±20V 945 pF @ 20 V - 2.3W (Ta), 24W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD25N06S240ATMA2

Таблицы данных

IPD25N06S240ATMA2

IPD25N06S240ATMA2

MOSFET N-CH 55V 29A TO252-31

Infineon Technologies

3723 1.00
- +

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Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 13A, 10V 4V @ 26µA 18 nC @ 10 V ±20V 513 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AON7442

Таблицы данных

AON7442

AON7442

MOSFET N-CHANNEL 30V 50A 8DFN

Alpha & Omega Semiconductor Inc.

2928 0.56
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Tape & Reel (TR) AlphaMOS Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 1.9mOhm @ 20A, 10V 2.2V @ 250µA 65 nC @ 10 V ±20V 2994 pF @ 15 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOI600A60

Таблицы данных

AOI600A60

AOI600A60

MOSFET N-CH 600V 8A TO251A

Alpha & Omega Semiconductor Inc.

3470 0.56
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Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 250µA 11.5 nC @ 10 V ±20V 608 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM3401CX RFG

Таблицы данных

TSM3401CX RFG

TSM3401CX RFG

MOSFET P-CHANNEL 30V 3A SOT23

Taiwan Semiconductor Corporation

24000 0.58
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) 4.5V, 10V 60mOhm @ 3A, 10V 3V @ 250µA 2.7 nC @ 10 V ±20V 551.57 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NVD6414ANT4G-VF01 NVD6414ANT4G-VF01

NVD6414ANT4G-VF01

MOSFET N-CH 100V 32A DPAK

onsemi

2567 0.56
- +

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Расследования

Tape & Reel (TR),Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 10V 37mOhm @ 32A, 10V 4V @ 250µA 40 nC @ 10 V ±20V 1450 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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