Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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NX3008PBKV,115NEXPERIA NX3008PBKV - 30 V, 220 |
2797 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDC6321CDUAL N & P CHANNEL DIGITAL FET 2 |
3028 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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FDG6321C-F169DUAL N & P CHANNEL DIGITAL FET 2 |
2750 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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DI038N04PQ2-AQMOSFET, 45V, 38A, N, 31W |
2667 | 1.52 |
ДобавитьРасследования |
Tape & Reel (TR),Tape & Reel (TR) | Automotive, AEC-Q101 | Active | 2 N-Channel (Dual) | Standard | 45V | 38A (Tc) | 12mOhm @ 10A, 10V | 2.5V @ 250µA | 14nC @ 10V | 830pF @ 30V | 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DI048N04PQ2MOSFET, 40V, 48A, N, 28W |
3083 | 1.67 |
ДобавитьРасследования |
Tape & Reel (TR),Tape & Reel (TR) | - | Active | 2 N-Channel (Dual) | Standard | 40V | 48A (Tc) | 9.6mOhm @ 12A, 10V | 2.5V @ 250µA | 48nC @ 10V | 2270pF @ 20V | 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DI048N04PQ2-AQMOSFET, 40V, 48A, N, 28W |
3416 | 1.80 |
ДобавитьРасследования |
Tape & Reel (TR),Tape & Reel (TR) | Automotive, AEC-Q101 | Active | 2 N-Channel (Dual) | Standard | 40V | 48A (Tc) | 9.6mOhm @ 12A, 10V | 2.5V @ 250µA | 48nC @ 10V | 2270pF @ 20V | 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SD5400CY SOIC 14LQUAD HIGH SPEED N-CHANNEL LATERA |
3831 | 6.89 |
ДобавитьРасследования |
Tube | SD5400 | Active | 4 N-Channel | Standard | 20V | 50mA (Ta) | 75Ohm @ 1mA, 5V | 1.5V @ 1µA | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SD5401CY SOIC 14LQUAD HIGH SPEED N-CHANNEL LATERA |
3863 | 7.09 |
ДобавитьРасследования |
Tube | SD5401 | Active | 4 N-Channel | Standard | 10V | 50mA (Ta) | 75Ohm @ 1mA, 5V | 1.5V @ 1µA | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FCA100AC1201200V 7.4M SIC MOSFET |
2908 | 720.00 |
ДобавитьРасследования |
Tray | - | Active | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A (Tc) | 14mOhm @ 100A, 20V | 5V @ 3mA | - | 17200pF @ 20V | 625W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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PAA12400BM31200V HALF-BRIDGE |
3047 | 882.36 |
ДобавитьРасследования |
Tray | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 350A | 7.3mOhm @ 300A, 20V | 5V @ 100mA | - | 29.5pF @ 1000V | - | -40°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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FCA150AC1201200V 4.5M SIC MOSFET |
2511 | 885.00 |
ДобавитьРасследования |
Tray | - | Active | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 150A (Tc) | 9.3mOhm @ 150A, 20V | 5V @ 4.5mA | - | 25300pF @ 20V | 1135W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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CAR600M12HN6600A 1200V HALF-BRIDGE RECTIFIER |
3411 | 2894.08 |
ДобавитьРасследования |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 908A (Tc) | - | - | - | 45300pF @ 0V | 50mW | -40°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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CAR600M17HN6600A 1700V HALF-BRIDGE RECTIFIER |
3525 | 3046.48 |
ДобавитьРасследования |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1700V (1.7kV) | 986A (Tc) | - | - | - | 55700pF @ 0V | 50mW | -40°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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CXT-PLA3SA12450AAMOS POWER MODULE 1200V/450A SIC |
2322 | 3484.80 |
ДобавитьРасследования |
Tray | - | Active | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 450A | 3.25mOhm @ 300A | - | 295nC @ 15V | 30000pF @ 600V | - | -40°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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CAB500M17HM3500A 1700V SIC HALF-BRIDGE |
3392 | 3619.50 |
ДобавитьРасследования |
Bulk | - | Active | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1700V (1.7kV) | 653A (Tc) | 2.6mOhm @ 500A, 15V | 3.6V @ 203mA | 1992nC @ 15V | 64900pF @ 1200V | 50mW | -40°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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FW297-TL-2WMOSFET 2N-CH 60V 4.5A 8SOIC |
2385 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | 2 N-Channel (Dual) | Logic Level Gate, 4V Drive | 60V | 4.5A | 58mOhm @ 4.5A, 10V | 2.6V @ 1mA | 14nC @ 10V | 750pF @ 20V | 1.8W | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS6911MOSFET 2N-CH 20V 7.5A 8SOIC |
3749 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 20V | 7.5A | 13mOhm @ 7.5A, 10V | 3V @ 250µA | 24nC @ 10V | 1130pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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EPC2106ENGRTGAN TRANS 2N-CH 100V BUMPED DIE |
3590 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | eGaN® | Discontinued at Mosen | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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EPC2103ENGRTGANFET TRANS SYM HALF BRDG 80V |
2704 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | eGaN® | Discontinued at Mosen | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | - | - | Surface Mount |
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Таблицы данных |
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EPC2104ENGRTGANFET 2NCH 100V 23A DIE |
2747 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | eGaN® | Discontinued at Mosen | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount |
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