Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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ALD212904PALMOSFET 2N-CH 10.6V 0.08A 8DIP |
3029 | 5.45 |
ДобавитьРасследования |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
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Таблицы данных |
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ALD212904SALMOSFET 2N-CH 10.6V 0.08A 8SOIC |
2080 | 5.45 |
ДобавитьРасследования |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
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Таблицы данных |
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ALD212908PALMOSFET 2N-CH 10.6V 0.08A 8DIP |
3316 | 5.45 |
ДобавитьРасследования |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
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Таблицы данных |
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ALD212908SALMOSFET 2N-CH 10.6V 0.08A 8SOIC |
2338 | 5.45 |
ДобавитьРасследования |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
Таблицы данных |
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ALD110908PALMOSFET 2N-CH 10.6V 8DIP |
3745 | 5.52 |
ДобавитьРасследования |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 820mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
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Таблицы данных |
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ALD110914PALMOSFET 2N-CH 10.6V 8DIP |
3708 | 5.52 |
ДобавитьРасследования |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 5.4V | 1.42V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
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Таблицы данных |
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ALD1108ESCLMOSFET 4N-CH 10V 16SOIC |
3307 | 5.54 |
ДобавитьРасследования |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | 25pF @ 5V | 600mW | 0°C ~ 70°C (TJ) | Surface Mount |
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Таблицы данных |
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ALD114804SCLMOSFET 4N-CH 10.6V 16SOIC |
3410 | 5.57 |
ДобавитьРасследования |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
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Таблицы данных |
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ALD210808PCLMOSFET 4N-CH 10.6V 0.08A 16DIP |
3127 | 5.62 |
ДобавитьРасследования |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
Таблицы данных |
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ALD210808SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC |
3408 | 5.62 |
ДобавитьРасследования |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
Таблицы данных |
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ALD110802PCLMOSFET 4N-CH 10.6V 16DIP |
3660 | 5.68 |
ДобавитьРасследования |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
Таблицы данных |
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ALD110802SCLMOSFET 4N-CH 10.6V 16SOIC |
2073 | 5.68 |
ДобавитьРасследования |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
Таблицы данных |
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ALD110804PCLMOSFET 4N-CH 10.6V 16DIP |
3386 | 5.68 |
ДобавитьРасследования |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
Таблицы данных |
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ALD110804SCLMOSFET 4N-CH 10.6V 16SOIC |
2710 | 5.68 |
ДобавитьРасследования |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
Таблицы данных |
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ALD110814PCLMOSFET 4N-CH 10.6V 16DIP |
3392 | 5.68 |
ДобавитьРасследования |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 5.4V | 1.42V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
Таблицы данных |
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ALD114813SCLMOSFET 4N-CH 10.6V 16SOIC |
2828 | 5.69 |
ДобавитьРасследования |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
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Таблицы данных |
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ALD110808PCLMOSFET 4N-CH 10.6V 16DIP |
3968 | 5.72 |
ДобавитьРасследования |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 820mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
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Таблицы данных |
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ALD114935PALMOSFET 2N-CH 10.6V 8DIP |
3353 | 5.77 |
ДобавитьРасследования |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
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Таблицы данных |
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ALD310700SCLMOSFET 4 P-CH 8V 16SOIC |
2862 | 5.80 |
ДобавитьРасследования |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount |
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Таблицы данных |
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ALD310702SCLMOSFET 4 P-CH 8V 16SOIC |
2249 | 5.80 |
ДобавитьРасследования |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount |
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