Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
TC4428MJA

Таблицы данных

TC4428MJA

TC4428MJA

IC GATE DRVR LOW-SIDE 8CERDIP

Microchip Technology

2189 0.00
- +

Добавить

Расследования

Tube - Obsolete Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.5A, 1.5A Inverting, Non-Inverting - 19ns, 19ns -55°C ~ 125°C (TA) Through Hole
TC428MJA

Таблицы данных

TC428MJA

TC428MJA

IC GATE DRVR LOW-SIDE 8CERDIP

Microchip Technology

3192 0.00
- +

Добавить

Расследования

Tube - Obsolete Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.5A, 1.5A Inverting, Non-Inverting - 30ns, 30ns -55°C ~ 125°C (TA) Through Hole
TC4427AMJA

Таблицы данных

TC4427AMJA

TC4427AMJA

IC GATE DRVR LOW-SIDE 8CERDIP

Microchip Technology

3393 0.00
- +

Добавить

Расследования

Tube - Obsolete Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.5A, 1.5A Non-Inverting - 25ns, 25ns -55°C ~ 125°C (TA) Through Hole
TC4426AMJA

Таблицы данных

TC4426AMJA

TC4426AMJA

IC GATE DRVR LOW-SIDE 8CERDIP

Microchip Technology

3391 0.00
- +

Добавить

Расследования

Tube - Obsolete Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.5A, 1.5A Inverting - 25ns, 25ns -55°C ~ 125°C (TA) Through Hole
TC4469EJD

Таблицы данных

TC4469EJD

TC4469EJD

IC GATE DRVR LOW-SIDE 14CERDIP

Microchip Technology

2777 0.00
- +

Добавить

Расследования

Tube - Obsolete Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.2A, 1.2A Inverting, Non-Inverting - 15ns, 15ns -40°C ~ 150°C (TJ) Through Hole
TC4467EJD

Таблицы данных

TC4467EJD

TC4467EJD

IC GATE DRVR LOW-SIDE 14CERDIP

Microchip Technology

3711 0.00
- +

Добавить

Расследования

Tube - Obsolete Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.2A, 1.2A Inverting - 15ns, 15ns -40°C ~ 150°C (TJ) Through Hole
TC4468EJD

Таблицы данных

TC4468EJD

TC4468EJD

IC GATE DRVR LOW-SIDE 14CERDIP

Microchip Technology

2225 0.00
- +

Добавить

Расследования

Tube - Obsolete Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.2A, 1.2A Non-Inverting - 15ns, 15ns -40°C ~ 150°C (TJ) Through Hole
TC428IJA

Таблицы данных

TC428IJA

TC428IJA

IC GATE DRVR LOW-SIDE 8CERDIP

Microchip Technology

3991 0.00
- +

Добавить

Расследования

Tube - Obsolete Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.5A, 1.5A Inverting, Non-Inverting - 30ns, 30ns -25°C ~ 85°C (TA) Through Hole
TC4431EJA

Таблицы данных

TC4431EJA

TC4431EJA

IC GATE DRVR HI/LOW SIDE 8CERDIP

Microchip Technology

3281 0.00
- +

Добавить

Расследования

Tube - Obsolete High-Side or Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 30V 0.8V, 2.4V 1.5A, 1.5A Inverting - 25ns, 33ns -40°C ~ 150°C (TJ) Through Hole
TC4432EJA

Таблицы данных

TC4432EJA

TC4432EJA

IC GATE DRVR HI/LOW SIDE 8CERDIP

Microchip Technology

2431 0.00
- +

Добавить

Расследования

Tube - Obsolete High-Side or Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 30V 0.8V, 2.4V 1.5A, 1.5A Non-Inverting - 25ns, 33ns -40°C ~ 150°C (TJ) Through Hole
IR21834STR

Таблицы данных

IR21834STR

IR21834STR

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies

2312 0.00
- +

Добавить

Расследования

Tape & Reel (TR),Cut Tape (CT) - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 1.9A, 2.3A Inverting, Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
IR1175

Таблицы данных

IR1175

IR1175

IC GATE DRVR LOW-SIDE 20DIP

Infineon Technologies

2266 0.00
- +

Добавить

Расследования

Tube - Obsolete Low-Side Synchronous 2 N-Channel MOSFET 4V ~ 5.5V - 2A, 2A Non-Inverting - 20ns, 20ns -40°C ~ 150°C (TJ) Through Hole
IR1176

Таблицы данных

IR1176

IR1176

IC GATE DRVR LOW-SIDE 20DIP

Infineon Technologies

2395 0.00
- +

Добавить

Расследования

Tube - Obsolete Low-Side Single 1 N-Channel MOSFET 4V ~ 5.25V - 4A, 4A Non-Inverting - 20ns, 20ns -40°C ~ 150°C (TJ) Through Hole
IR21271S

Таблицы данных

IR21271S

IR21271S

IC GATE DRVR HI/LOW SIDE 8SOIC

Infineon Technologies

3179 0.00
- +

Добавить

Расследования

Tube - Obsolete High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 9V ~ 20V 0.8V, 3V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
IR1176S

Таблицы данных

IR1176S

IR1176S

IC GATE DRVR LOW-SIDE 20SSOP

Infineon Technologies

2708 0.00
- +

Добавить

Расследования

Tube - Obsolete Low-Side Single 1 N-Channel MOSFET 4V ~ 5.25V - 4A, 4A Non-Inverting - 20ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
IR21271

Таблицы данных

IR21271

IR21271

IC GATE DRV HI-SIDE/LO-SIDE 8DIP

Infineon Technologies

2002 0.00
- +

Добавить

Расследования

Tube - Obsolete High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 9V ~ 20V 0.8V, 3V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
IR21814S

Таблицы данных

IR21814S

IR21814S

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies

3888 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 1.9A, 2.3A Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
IR2181

Таблицы данных

IR2181

IR2181

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

3433 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 1.9A, 2.3A Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Through Hole
IR21814

Таблицы данных

IR21814

IR21814

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

3501 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 1.9A, 2.3A Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Through Hole
IR2183S

Таблицы данных

IR2183S

IR2183S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

3204 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 1.9A, 2.3A Inverting, Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
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