Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
LTC1177ISW-5

Таблицы данных

LTC1177ISW-5

LTC1177ISW-5

IC GATE DRVR HIGH-SIDE 28SOIC

Analog Devices Inc.

3864 0.00
- +

Добавить

Расследования

Bulk - Obsolete High-Side - 1 - 4.75V ~ 5.25V - - Non-Inverting - - - Surface Mount
LTC1255IN8

Таблицы данных

LTC1255IN8

LTC1255IN8

IC GATE DRVR HIGH-SIDE 8DIP

Analog Devices Inc.

3212 0.00
- +

Добавить

Расследования

Tube - Active High-Side Independent 2 N-Channel MOSFET 9V ~ 24V 0.8V, 2V - Non-Inverting - - -40°C ~ 85°C (TA) Through Hole
MAX627CSA

Таблицы данных

MAX627CSA

MAX627CSA

IC GATE DRVR LOW-SIDE 8SOIC

Analog Devices Inc./Maxim Integrated

2467 1.00
- +

Добавить

Расследования

Tube,Tube - Obsolete Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 2A, 2A Non-Inverting - 25ns, 20ns 0°C ~ 70°C (TA) Surface Mount
IR2101S

Таблицы данных

IR2101S

IR2101S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

2700 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Non-Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2102

Таблицы данных

IR2102

IR2102

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

2100 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR21064

Таблицы данных

IR21064

IR21064

IC GATE DRVR HI/LOW SIDE 14DIP

Infineon Technologies

2399 0.00
- +

Добавить

Расследования

Tube - Obsolete High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR21064S

Таблицы данных

IR21064S

IR21064S

IC GATE DRVR HI/LOW SIDE 14SOIC

Infineon Technologies

3697 0.00
- +

Добавить

Расследования

Tube - Obsolete High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2106S

Таблицы данных

IR2106S

IR2106S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

3288 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR21074

Таблицы данных

IR21074

IR21074

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

3348 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 200mA, 350mA Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR21074S

Таблицы данных

IR21074S

IR21074S

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies

2875 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 200mA, 350mA Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2107S

Таблицы данных

IR2107S

IR2107S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

2332 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 200mA, 350mA Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
98-0255

Таблицы данных

98-0255

98-0255

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

3033 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole
98-0317

Таблицы данных

98-0317

98-0317

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies

2172 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2108S

Таблицы данных

IR2108S

IR2108S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

3760 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2109

Таблицы данных

IR2109

IR2109

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

2282 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR21094

Таблицы данных

IR21094

IR21094

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

2132 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR21094S

Таблицы данных

IR21094S

IR21094S

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies

3815 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2109S

Таблицы данных

IR2109S

IR2109S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

2677 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2109STR

Таблицы данных

IR2109STR

IR2109STR

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

3941 0.00
- +

Добавить

Расследования

Tape & Reel (TR) - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2110-1

Таблицы данных

IR2110-1

IR2110-1

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

3672 0.00
- +

Добавить

Расследования

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 6V, 9.5V 2A, 2A Non-Inverting 500 V 25ns, 17ns -40°C ~ 150°C (TJ) Through Hole
Total 6914 Records«Prev1... 212213214215216217218219...346Next»
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