Memory,Integrated Circuits (ICs)

Таблицы данных	Производитель. Часть #	Акции	Цены	А	Packaging	Series	ProductStatus	MemoryType	MemoryFormat	Technology	MemorySize	MemoryInterface	ClockFrequency	WriteCycleTime-WordPage	AccessTime	Voltage-Supply	OperatingTemperature	MountingType
	S29GL128S11DHBV13 IC FLASH 128MBIT PARALLEL 64FBGA Cypress Semiconductor Corp	3981	4.92	- + Добавить Расследования	Tape & Reel (TR)	GL-S	Active	Non-Volatile	FLASH	FLASH - NOR	128Mb (8M x 16)	Parallel	-	60ns	110 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount
Таблицы данных	IS42SM16800H-75BLI IC DRAM 128MBIT PARALLEL 54TFBGA ISSI, Integrated Silicon Solution Inc	3427	4.92	- + Добавить Расследования	Tray	-	Active	Volatile	DRAM	SDRAM - Mobile	128Mb (8M x 16)	Parallel	133 MHz	-	6 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount
Таблицы данных	IS42RM16800H-75BLI IC DRAM 128MBIT PARALLEL 54TFBGA ISSI, Integrated Silicon Solution Inc	3193	4.92	- + Добавить Расследования	Tray	-	Active	Volatile	DRAM	SDRAM - Mobile	128Mb (8M x 16)	Parallel	133 MHz	-	6 ns	2.3V ~ 2.7V	-40°C ~ 85°C (TA)	Surface Mount
Таблицы данных	IS61WV2568EDBLL-10KLI IC SRAM 2MBIT PARALLEL 36SOJ ISSI, Integrated Silicon Solution Inc	3682	4.92	- + Добавить Расследования	Tube	-	Active	Volatile	SRAM	SRAM - Asynchronous	2Mb (256K x 8)	Parallel	-	10ns	10 ns	2.4V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount
	MT25QU128ABB8E12-0AUT TR IC FLASH 128MBIT SPI 24TPBGA Micron Technology Inc.	2830	4.93	- + Добавить Расследования	Tape & Reel (TR)	Automotive, AEC-Q100	Active	Non-Volatile	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	133 MHz	8ms, 2.8ms	-	1.7V ~ 2V	-40°C ~ 105°C (TA)	Surface Mount
Таблицы данных	W632GU8NB-09 TR 2GB DDR3L 1.35V SDRAM, X8, 1066M Winbond Electronics	3106	4.93	- + Добавить Расследования	Tape & Reel (TR)	-	Active	Volatile	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	Parallel	1.066 GHz	15ns	20 ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount
Таблицы данных	W632GG8NB-09 TR 2GB DDR3 SDRAM, X8, 1066MHZ, T&R Winbond Electronics	3039	4.93	- + Добавить Расследования	Tape & Reel (TR)	-	Active	Volatile	DRAM	SDRAM - DDR3	2Gb (256M x 8)	SSTL_15	1.066 GHz	15ns	20 ns	1.425V ~ 1.575V	0°C ~ 95°C (TC)	Surface Mount
Таблицы данных	W25N02JWTBIF TR 2G-BIT SERIAL NAND FLASH, 1.8V Winbond Electronics	3878	4.93	- + Добавить Расследования	Tape & Reel (TR)	SpiFlash®	Active	Non-Volatile	FLASH	FLASH - NAND (SLC)	2Gb (256M x 8)	SPI - Quad I/O, QPI, DTR	166 MHz	700µs	6 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount
Таблицы данных	W25N02JWTBIC TR 2G-BIT SERIAL NAND FLASH, 1.8V Winbond Electronics	2272	4.93	- + Добавить Расследования	Tape & Reel (TR)	SpiFlash®	Active	Non-Volatile	FLASH	FLASH - NAND (SLC)	2Gb (256M x 8)	SPI - Quad I/O, QPI, DTR	166 MHz	700µs	6 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount
Таблицы данных	S25FL256LAGMFA001 IC FLASH 256MBIT SPI/QUAD 16SOIC Cypress Semiconductor Corp	3726	4.94	- + Добавить Расследования	Tube	Automotive, AEC-Q100, FL-L	Active	Non-Volatile	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O, QPI	133 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount
Таблицы данных	IS43R83200D-5TL-TR IC DRAM 256MBIT PAR 66TSOP II ISSI, Integrated Silicon Solution Inc	3815	4.94	- + Добавить Расследования	Tape & Reel (TR)	-	Not For New Designs	Volatile	DRAM	SDRAM - DDR	256Mb (32M x 8)	Parallel	200 MHz	15ns	700 ps	2.3V ~ 2.7V	0°C ~ 70°C (TA)	Surface Mount
Таблицы данных	CY62146EV30LL-45ZSXIT IC SRAM 4MBIT PARALLEL 44TSOP II Cypress Semiconductor Corp	2800	1.00	- + Добавить Расследования	Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk	MoBL®	Active	Volatile	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	45ns	45 ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount
Таблицы данных	W63AH6NBVABE 1GB LPDDR3, X16, 800MHZ Winbond Electronics	3898	4.94	- + Добавить Расследования	Tray	-	Active	Volatile	DRAM	SDRAM - Mobile LPDDR3	1Gb (64M x 16)	HSUL_12	800 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-25°C ~ 85°C (TC)	Surface Mount
Таблицы данных	W978H2KBVX2E IC DRAM 256MBIT PAR 134VFBGA Winbond Electronics	2043	4.94	- + Добавить Расследования	Tray	-	Not For New Designs	Volatile	DRAM	SDRAM - Mobile LPDDR2	256Mb (8M x 32)	Parallel	400 MHz	15ns	-	1.14V ~ 1.95V	-25°C ~ 85°C (TC)	Surface Mount
Таблицы данных	W978H2KBVX2I IC DRAM 256MBIT PAR 134VFBGA Winbond Electronics	2520	4.94	- + Добавить Расследования	Tray	-	Not For New Designs	Volatile	DRAM	SDRAM - Mobile LPDDR2	256Mb (8M x 32)	Parallel	400 MHz	15ns	-	1.14V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount
Таблицы данных	W978H6KBVX1E 256MB LPDDR2, X16, 533MHZ, -25 ~ Winbond Electronics	2471	4.94	- + Добавить Расследования	Tray	-	Not For New Designs	Volatile	DRAM	SDRAM - Mobile LPDDR2-S4B	256Mb (16M x 16)	HSUL_12	533 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-25°C ~ 85°C (TC)	Surface Mount
Таблицы данных	W978H2KBVX1I 256MB LPDDR2, X32, 533MHZ, -40 ~ Winbond Electronics	2797	4.94	- + Добавить Расследования	Tray	-	Not For New Designs	Volatile	DRAM	SDRAM - Mobile LPDDR2-S4B	256Mb (8M x 32)	HSUL_12	533 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount
Таблицы данных	W978H2KBVX1E 256MB LPDDR2, X32, 533MHZ, -25 ~ Winbond Electronics	2572	4.94	- + Добавить Расследования	Tray	-	Not For New Designs	Volatile	DRAM	SDRAM - Mobile LPDDR2-S4B	256Mb (8M x 32)	HSUL_12	533 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-25°C ~ 85°C (TC)	Surface Mount
Таблицы данных	W978H6KBVX1I 256MB LPDDR2, X16, 533MHZ, -40 ~ Winbond Electronics	2468	4.94	- + Добавить Расследования	Tray	-	Not For New Designs	Volatile	DRAM	SDRAM - Mobile LPDDR2-S4B	256Mb (16M x 16)	HSUL_12	533 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount
Таблицы данных	IS45S16800F-7BLA1-TR IC DRAM 128MBIT PARALLEL 54TFBGA ISSI, Integrated Silicon Solution Inc	2623	4.95	- + Добавить Расследования	Tape & Reel (TR)	-	Active	Volatile	DRAM	SDRAM	128Mb (8M x 16)	Parallel	143 MHz	-	5.4 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount

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