Diodes-Rectifiers-Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	Цены	А	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
Таблицы данных	RB450UMFHTL RB450UMFH IS THE HIGH RELIABILIT Rohm Semiconductor	3000	0.53	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®	Automotive, AEC-Q101	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	6pF @ 10V, 1MHz	-	10 µA @ 40 V	40 V	100mA	150°C (Max)	550 mV @ 100 mA
Таблицы данных	SB130-E3/73 DIODE SCHOTTKY 30V 1A DO204AL Vishay General Semiconductor - Diodes Division	4183	0.49	- + Добавить Расследования	Cut Tape (CT),Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 30 V	30 V	1A	-65°C ~ 125°C	480 mV @ 1 A
Таблицы данных	PSDP3060S1_T0_00001 TO-220AC, FAST Panjit International Inc.	4000	1.05	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	70 ns	250 µA @ 600 V	600 V	30A	-55°C ~ 150°C	2.3 V @ 30 A
Таблицы данных	SDURD830TR DIODE GEN PURP 300V 8A DPAK SMC Diode Solutions	24379	0.59	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	45 ns	10 µA @ 300 V	300 V	8A	-55°C ~ 150°C	1.3 V @ 8 A
Таблицы данных	RSFDL R3G DIODE GEN PURP 200V 500MA SUBSMA Taiwan Semiconductor Corporation	2992	0.36	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	500mA	-55°C ~ 150°C	1.3 V @ 500 mA
Таблицы данных	SS3P5HM3/85A DIODE SCHOTTKY 50V 3A DO220AA Vishay General Semiconductor - Diodes Division	27090	0.48	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®	eSMP®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	80pF @ 4V, 1MHz	-	100 µA @ 50 V	50 V	3A	-	780 mV @ 3 A
Таблицы данных	PSDP3060L1_T0_00001 TO-220AC, FAST Panjit International Inc.	4000	1.05	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	115 ns	250 µA @ 600 V	600 V	30A	-55°C ~ 150°C	1.8 V @ 30 A
Таблицы данных	B190-13-F DIODE SCHOTTKY 90V 1A SMA Diodes Incorporated	9619	0.61	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	80pF @ 4V, 1MHz	-	500 µA @ 90 V	90 V	1A	-65°C ~ 150°C	790 mV @ 1 A
Таблицы данных	MUR120-TP DIODE GEN PURP 200V 1A DO41 Micro Commercial Co	3887	0.19	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	20pF @ 4V, 1MHz	45 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1.35 V @ 1 A
Таблицы данных	BAS40T-7-F DIODE SCHOTTKY 40V 200MA SOT523 Diodes Incorporated	2940	0.50	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	5pF @ 0V, 1MHz	5 ns	200 nA @ 30 V	40 V	200mA (DC)	-55°C ~ 125°C	1 V @ 40 mA
Таблицы данных	PSDB3060L1_T0_00001 TO-263, FRED Panjit International Inc.	2000	1.05	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	115 ns	250 µA @ 600 V	600 V	30A	-55°C ~ 150°C	1.8 V @ 30 A
Таблицы данных	DD600 HV DIODE D2.5X6.5 6000V 0.02A Diotec Semiconductor	5000	0.47	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	-	150 ns	5 µA @ 6000 V	6000 V	20mA	-50°C ~ 150°C	40 V @ 10 mA
Таблицы данных	S3B-E3/57T DIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division	7410	0.51	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 4V, 1MHz	2.5 µs	10 µA @ 100 V	100 V	3A	-55°C ~ 150°C	1.15 V @ 2.5 A
Таблицы данных	BAS516,L3F DIODE GEN PURP 100V 250MA ESC Toshiba Semiconductor and Storage	3621	0.19	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	0.35pF @ 0V, 1MHz	3 ns	200 nA @ 80 V	100 V	250mA	150°C (Max)	1.25 V @ 150 mA
Таблицы данных	S2D-13-F DIODE GEN PURP 200V 1.5A SMB Diodes Incorporated	12130	0.50	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	20pF @ 4V, 1MHz	-	5 µA @ 200 V	200 V	1.5A	-65°C ~ 150°C	1.15 V @ 1.5 A
Таблицы данных	PSDB3060S1_T0_00001 TO-263, FRED Panjit International Inc.	1997	1.05	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	70 ns	250 µA @ 600 V	600 V	30A	-55°C ~ 150°C	2.3 V @ 30 A
Таблицы данных	S3Y DIODE STD SMC 2000V 3A Diotec Semiconductor	504000	0.48	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	1.5 µs	5 µA @ 2000 V	2000 V	3A	-50°C ~ 150°C	1.15 V @ 3 A
Таблицы данных	HER102G A0G DIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation	14202	0.60	- + Добавить Расследования	Cut Tape (CT),Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1 V @ 1 A
Таблицы данных	RS2AA R3G DIODE GEN PURP 50V 1.5A DO214AC Taiwan Semiconductor Corporation	4763	0.49	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	50pF @ 4V, 1MHz	150 ns	5 µA @ 50 V	50 V	1.5A	-55°C ~ 150°C	1.3 V @ 1.5 A
Таблицы данных	RGP10D-E3/73 DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division	9856	0.42	- + Добавить Расследования	Cut Tape (CT),Tape & Box (TB)	SUPERECTIFIER®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	1A	-65°C ~ 175°C	1.3 V @ 1 A

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