Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
JAN1N6075

Таблицы данных

JAN1N6075

JAN1N6075

DIODE GEN PURP 150V 3A AXIAL

Microchip Technology

2328 13.86
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Bulk Military, MIL-PRF-19500/503 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 1 µA @ 150 V 150 V 3A -65°C ~ 155°C 2.04 V @ 9.4 A
VS-35APF12L-M3

Таблицы данных

VS-35APF12L-M3

VS-35APF12L-M3

RECTIFIER DIODE 35A 1200V TO-247

Vishay General Semiconductor - Diodes Division

2568 1.86
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 450 ns 100 µA @ 1200 V 1200 V 35A -40°C ~ 150°C 1.47 V @ 35 A
1N5298UR-1/TR

Таблицы данных

1N5298UR-1/TR

1N5298UR-1/TR

CURRENT REGULATOR

Microchip Technology

3856 19.25
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - - 100 V 1.21A -65°C ~ 175°C 1.4 V @ 792 mA
KSF30H60

Таблицы данных

KSF30H60

KSF30H60

DIODE FAST RECOVERY 600V 30A TO-

KYOCERA AVX

3576 2.16
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 130 ns 50 µA @ 600 V 600 V 30A -40°C ~ 175°C 1.35 V @ 30 A
S70D

Таблицы данных

S70D

S70D

DIODE GEN PURP 200V 70A DO5

GeneSiC Semiconductor

2310 11.83
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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 200 V 70A -65°C ~ 180°C 1.1 V @ 70 A
FR16B02

Таблицы данных

FR16B02

FR16B02

DIODE GEN PURP 100V 16A DO4

GeneSiC Semiconductor

2824 9.24
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 100 V 100 V 16A -65°C ~ 150°C 900 mV @ 16 A
1N5820US/TR 1N5820US/TR

1N5820US/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology

3189 13.88
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 20 V 20 V 3A -65°C ~ 125°C 500 mV @ 3 A
VS-35EPF12L-M3

Таблицы данных

VS-35EPF12L-M3

VS-35EPF12L-M3

RECTIFIER DIODE 35A 1200V TO-247

Vishay General Semiconductor - Diodes Division

3473 1.86
- +

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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 450 ns 100 µA @ 1200 V 1200 V 35A -40°C ~ 150°C 1.47 V @ 35 A
1N5304UR-1/TR

Таблицы данных

1N5304UR-1/TR

1N5304UR-1/TR

CURRENT REGULATOR

Microchip Technology

3796 19.25
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - - 100 V 1.98A -65°C ~ 175°C 1.75 V @ 1.296 A
KCF16A20

Таблицы данных

KCF16A20

KCF16A20

DIODE FAST RECOVERY 200V 16A TO-

KYOCERA AVX

2563 2.16
- +

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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 25 µA @ 200 V 200 V 16A -40°C ~ 150°C 980 mV @ 8 A
S70DR

Таблицы данных

S70DR

S70DR

DIODE GEN PURP REV 200V 70A DO5

GeneSiC Semiconductor

3425 11.83
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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 100 V 200 V 70A -65°C ~ 180°C 1.1 V @ 70 A
FR16B05

Таблицы данных

FR16B05

FR16B05

DIODE GEN PURP 100V 16A DO4

GeneSiC Semiconductor

3436 9.24
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 100 V 16A -65°C ~ 150°C 1.4 V @ 16 A
UES1103E3/TR UES1103E3/TR

UES1103E3/TR

RECTIFIER UFR,FRR

Microchip Technology

2906 13.89
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 2 µA @ 150 V 150 V 2.5A 175°C 975 mV @ 2 A
VS-20ETF08STRL-M3

Таблицы данных

VS-20ETF08STRL-M3

VS-20ETF08STRL-M3

DIODE GEN PURP 800V 20A TO263AB

Vishay General Semiconductor - Diodes Division

2224 1.87
- +

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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 400 ns 100 µA @ 800 V 800 V 20A -40°C ~ 150°C 1.31 V @ 20 A
1N5311UR-1/TR

Таблицы данных

1N5311UR-1/TR

1N5311UR-1/TR

CURRENT REGULATOR

Microchip Technology

2400 19.25
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - - 100 V 3.96A -65°C ~ 175°C 2.5 V @ 2.592 A
RRD20TJ10SGC9 RRD20TJ10SGC9

RRD20TJ10SGC9

RECTIFYING DIODE : RRD20TJ10S IS

Rohm Semiconductor

3328 3.87
- +

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Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 1000 V 1000 V 20A 150°C 1.05 V @ 20 A
S70G

Таблицы данных

S70G

S70G

DIODE GEN PURP 400V 70A DO5

GeneSiC Semiconductor

3442 11.83
- +

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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 400 V 70A -65°C ~ 180°C 1.1 V @ 70 A
FR16D02

Таблицы данных

FR16D02

FR16D02

DIODE GEN PURP 200V 16A DO4

GeneSiC Semiconductor

3226 9.24
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 100 V 200 V 16A -65°C ~ 150°C 900 mV @ 16 A
JANTX1N6621US/TR JANTX1N6621US/TR

JANTX1N6621US/TR

RECTIFIER UFR,FRR

Microchip Technology

3801 13.92
- +

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Tape & Reel (TR) Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 10V, 1MHz 30 ns 500 nA @ 440 V 440 V 2A -65°C ~ 150°C 1.4 V @ 1.2 A
VS-20ETF08STRR-M3

Таблицы данных

VS-20ETF08STRR-M3

VS-20ETF08STRR-M3

DIODE GEN PURP 800V 20A TO263AB

Vishay General Semiconductor - Diodes Division

3329 1.87
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 400 ns 100 µA @ 800 V 800 V 20A -40°C ~ 150°C 1.31 V @ 20 A
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