Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
1N5618US/TR

Таблицы данных

1N5618US/TR

1N5618US/TR

STD RECTIFIER

Microchip Technology

3129 6.80
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 2 µs 500 nA @ 600 V 600 V 1A -65°C ~ 200°C 1.3 V @ 3 A
HSM350GE3/TR13

Таблицы данных

HSM350GE3/TR13

HSM350GE3/TR13

DIODE SCHOTTKY 50V 3A DO215AB

Microchip Technology

2682 0.86
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 50 V 50 V 3A -55°C ~ 175°C 620 mV @ 3 A
JANTX1N5806 JANTX1N5806

JANTX1N5806

DIODE GEN PURP 150V 1A AXIAL

Microchip Technology

2022 5.18
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Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 10V, 1MHz 25 ns 1 µA @ 150 V 150 V 1A -65°C ~ 175°C 875 mV @ 1 A
JANTX1N5712-1/TR JANTX1N5712-1/TR

JANTX1N5712-1/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology

2065 8.07
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Tape & Reel (TR) Military, MIL-PRF-19500/444 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 2pF @ 0V, 1MHz - 150 nA @ 16 V 20 V 750mA -65°C ~ 150°C 1 V @ 35 mA
VS-ETU0805-M3

Таблицы данных

VS-ETU0805-M3

VS-ETU0805-M3

DIODE GEN PURP 500V 8A TO220AC

Vishay General Semiconductor - Diodes Division

2257 0.94
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Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 9 µA @ 500 V 500 V 8A -65°C ~ 175°C 1.25 V @ 8 A
CDLL5195/TR CDLL5195/TR

CDLL5195/TR

SIGNAL/COMPUTER DIODE

Microchip Technology

3090 7.74
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Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - - 100 µA @ 180 V 180 V 200mA -65°C ~ 175°C 1 V @ 100 mA
VS-12FL100S05

Таблицы данных

VS-12FL100S05

VS-12FL100S05

DIODE GEN PURP 1KV 12A DO203AA

Vishay General Semiconductor - Diodes Division

2678 6.80
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 50 µA @ 1000 V 1000 V 12A -65°C ~ 150°C 1.4 V @ 12 A
HSM350JE3/TR13

Таблицы данных

HSM350JE3/TR13

HSM350JE3/TR13

DIODE SCHOTTKY 50V 3A DO214AB

Microchip Technology

2123 0.86
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 50 V 50 V 3A -55°C ~ 175°C 620 mV @ 3 A
JANTX1N5615/TR JANTX1N5615/TR

JANTX1N5615/TR

RECTIFIER UFR,FRR

Microchip Technology

2580 5.18
- +

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Tape & Reel (TR) Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 45pF @ 12V, 1MHz 150 ns 500 nA @ 200 V 200 V 1A -65°C ~ 175°C 1.6 V @ 3 A
JANTX1N6640US

Таблицы данных

JANTX1N6640US

JANTX1N6640US

DIODE GEN PURP 50V 300MA D5D

Microchip Technology

2531 8.09
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Bulk Military, MIL-PRF-19500/609 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 4 ns 100 nA @ 50 V 50 V 300mA -65°C ~ 175°C 1 V @ 200 mA
MF10H100HE3_B/P

Таблицы данных

MF10H100HE3_B/P

MF10H100HE3_B/P

DIODE SCHOTTKY 100V 10A TO220AC

Vishay General Semiconductor - Diodes Division

2916 0.94
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Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 4.5 µA @ 100 V 100 V 10A -65°C ~ 175°C 880 mV @ 20 A
1N6622US/TR

Таблицы данных

1N6622US/TR

1N6622US/TR

RECTIFIER UFR,FRR

Microchip Technology

2987 7.74
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 10V, 1MHz 30 ns 500 nA @ 660 V 660 V 1.2A -65°C ~ 150°C 1.4 V @ 1.2 A
VS-12FLR100S05

Таблицы данных

VS-12FLR100S05

VS-12FLR100S05

DIODE GEN PURP 1KV 12A DO203AA

Vishay General Semiconductor - Diodes Division

2187 6.80
- +

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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 50 µA @ 1000 V 1000 V 12A -65°C ~ 150°C 1.4 V @ 12 A
HSM360GE3/TR13

Таблицы данных

HSM360GE3/TR13

HSM360GE3/TR13

DIODE SCHOTTKY 60V 3A DO215AB

Microchip Technology

3972 0.86
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 60 V 60 V 3A -55°C ~ 175°C 620 mV @ 3 A
VS-90EPF12L-M3

Таблицы данных

VS-90EPF12L-M3

VS-90EPF12L-M3

RECTIFIER DIODE 90A 1200V TO-247

Vishay General Semiconductor - Diodes Division

3298 5.18
- +

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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 480 ns 100 µA @ 1200 V 1200 V 90A -40°C ~ 150°C 1.38 V @ 90 A
JANTX1N5804US

Таблицы данных

JANTX1N5804US

JANTX1N5804US

DIODE GEN PURP 100V 1A D5A

Microchip Technology

2576 8.09
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Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 10V, 1MHz 25 ns 1 µA @ 100 V 100 V 1A -65°C ~ 175°C 875 mV @ 1 A
VS-8ETH06STRLHM3

Таблицы данных

VS-8ETH06STRLHM3

VS-8ETH06STRLHM3

DIODE GEN PURP 600V 8A TO263

Vishay General Semiconductor - Diodes Division

2985 0.94
- +

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Tape & Reel (TR) Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 22 ns 50 µA @ 600 V 600 V 8A -55°C ~ 175°C 2.4 V @ 8 A
1N5819UR-1/TR

Таблицы данных

1N5819UR-1/TR

1N5819UR-1/TR

SCHOTTKY

Microchip Technology

3196 7.75
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 70pF @ 5V, 1MHz - 50 µA @ 45 V 45 V 1A -65°C ~ 125°C 490 mV @ 1 A
VS-52PF120

Таблицы данных

VS-52PF120

VS-52PF120

DIODE GEN PURP 1.2KV 50A DO203AB

Vishay General Semiconductor - Diodes Division

3024 6.82
- +

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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 1200 V 50A -55°C ~ 180°C 1.4 V @ 125 A
HSM5100JE3/TR13

Таблицы данных

HSM5100JE3/TR13

HSM5100JE3/TR13

DIODE SCHOTTKY 100V 5A DO214AB

Microchip Technology

3534 0.86
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 250 µA @ 100 V 100 V 5A -55°C ~ 175°C 800 mV @ 5 A
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