Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
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Таблицы данных |
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TST30H120CW C0GDIODE SCHOTTKY 120V 15A TO220AB |
3651 | 1.35 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 120 V | 120 V | 15A | -55°C ~ 150°C | 880 mV @ 15 A | |||
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Таблицы данных |
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1N4246/TRRECTIFIER UFR,FRR |
3922 | 3.47 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A | |||
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Таблицы данных |
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AS1PDHM3/85ADIODE AVALANCHE 200V 1.5A DO220 |
2658 | 0.36 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 200 V | 200 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A | ||
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Таблицы данных |
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VS-6EWX06FNTRL-M3DIODE GEN PURP 600V 6A D-PAK |
3521 | 0.38 |
ДобавитьРасследования |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 21 ns | 20 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 3.1 V @ 6 A | ||
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Таблицы данных |
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FESB16FTHE3_A/IDIODE GEN PURP 300V 16A TO263AB |
3630 | 1.14 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A | ||
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Таблицы данных |
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SR1504 R0GDIODE SCHOTTKY 40V 15A R-6 |
3590 | 0.85 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 15A | -50°C ~ 150°C | 550 mV @ 15 A | |||
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Таблицы данных |
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FESB16ATHE3_A/IDIODE GEN PURP 50V 16A TO263AB |
3059 | 1.35 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | ||
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Таблицы данных |
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VS-25FR10DIODE GEN PURP 100V 25A DO203AA |
2527 | 3.48 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 100 V | 100 V | 25A | -65°C ~ 175°C | 1.3 V @ 78 A | |||
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Таблицы данных |
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AS1PGHM3/84ADIODE AVALANCHE 400V 1.5A DO220 |
3457 | 0.36 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 400 V | 400 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A | ||
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Таблицы данных |
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VS-6EWX06FNTRR-M3DIODE GEN PURP 600V 6A D-PAK |
3702 | 0.38 |
ДобавитьРасследования |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 21 ns | 20 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 3.1 V @ 6 A | ||
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Таблицы данных |
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FESB16GTHE3_A/IDIODE GEN PURP 400V 16A TO263AB |
2140 | 1.14 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A | ||
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Таблицы данных |
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VB20150SG-E3/8WDIODE SCHOTTKY 150V 20A TO263AB |
3594 | 0.85 |
ДобавитьРасследования |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.6 V @ 20 A | ||
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Таблицы данных |
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FESB16BTHE3_A/IDIODE GEN PURP 100V 16A TO263AB |
3550 | 1.35 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | ||
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Таблицы данных |
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JAN1N4246DIODE GEN PURP 400V 1A AXIAL |
2969 | 3.49 |
ДобавитьРасследования |
Bulk | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A | ||
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Таблицы данных |
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AS1PGHM3/85ADIODE AVALANCHE 400V 1.5A DO220 |
2196 | 0.36 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 400 V | 400 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A | ||
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Таблицы данных |
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DAN212KT146DIODE GEN PURP 80V 100MA SMD3 |
2202 | 0.38 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 3.5pF @ 6V, 1MHz | 4 ns | 100 nA @ 70 V | 80 V | 100mA | 150°C (Max) | 1.2 V @ 100 mA | |||
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Таблицы данных |
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FESB16HTHE3_A/IDIODE GEN PURP 500V 16A TO263AB |
2071 | 1.14 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 145pF @ 4V, 1MHz | 50 ns | 10 µA @ 500 V | 500 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A | ||
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Таблицы данных |
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HS5B V7GDIODE GEN PURP 100V 5A DO214AB |
3170 | 1.48 |
ДобавитьРасследования |
Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 1 V @ 5 A | |||
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Таблицы данных |
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FESB16CTHE3_A/IDIODE GEN PURP 150V 16A TO263AB |
3767 | 1.35 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | ||
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Таблицы данных |
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C6D08065EGEN 6 650V 8 A SBD |
2622 | 3.52 |
ДобавитьРасследования |
Tube | Z-Rec® | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 518pF @ 0V, 1MHz | 0 ns | 40 µA @ 650 V | 650 V | 29A (DC) | -55°C ~ 175°C | 1.5 V @ 8 A |
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