Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
GIB1402HE3_A/I

Таблицы данных

GIB1402HE3_A/I

GIB1402HE3_A/I

DIODE GEN PURP 100V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3297 0.83
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 5 µA @ 100 V 100 V 8A -65°C ~ 150°C 975 mV @ 8 A
ES1DLHRUG

Таблицы данных

ES1DLHRUG

ES1DLHRUG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

3172 0.27
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 950 mV @ 1 A
JANTXV1N4148-1 JANTXV1N4148-1

JANTXV1N4148-1

ZENER DIODE

Microchip Technology

3969 1.29
- +

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Расследования

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - 20 ns 500 nA @ 75 V 75 V 200mA (DC) -65°C ~ 175°C 1.2 V @ 100 mA
VS-18TQ040STRRHM3

Таблицы данных

VS-18TQ040STRRHM3

VS-18TQ040STRRHM3

SCHOTTKY - D2PAK

Vishay General Semiconductor - Diodes Division

2330 1.22
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1400pF @ 5V, 1MHz - 2.5 mA @ 40 V 40 V 18A -55°C ~ 175°C 600 mV @ 18 A
JANTX1N4150-1

Таблицы данных

JANTX1N4150-1

JANTX1N4150-1

DIODE GEN PURP 50V 200MA DO35

Microchip Technology

3285 1.06
- +

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Расследования

Bulk Military, MIL-PRF-19500/231 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - 4 ns 100 nA @ 50 V 50 V 200mA -65°C ~ 175°C 1 V @ 200 mA
10A01-TP

Таблицы данных

10A01-TP

10A01-TP

DIODE GEN PURP 50V 10A R-6

Micro Commercial Co

3742 0.27
- +

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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Not For New Designs Through Hole 150pF @ 4V, 1MHz - 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 1 V @ 10 A
GIB1403HE3_A/I

Таблицы данных

GIB1403HE3_A/I

GIB1403HE3_A/I

DIODE GEN PURP 150V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3718 0.83
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 5 µA @ 150 V 150 V 8A -65°C ~ 150°C 975 mV @ 8 A
31GF4-E3/73

Таблицы данных

31GF4-E3/73

31GF4-E3/73

DIODE GEN PURP 400V 3A DO201AD

Vishay General Semiconductor - Diodes Division

3367 0.27
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 20 µA @ 400 V 400 V 3A -40°C ~ 150°C 1.25 V @ 3 A
JAN1N4148UR-1/TR JAN1N4148UR-1/TR

JAN1N4148UR-1/TR

SIGNAL/COMPUTER DIODE

Microchip Technology

3682 1.29
- +

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Расследования

Tape & Reel (TR) Military, MIL-PRF-19500/241 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 2.8pF @ 1.5V, 1MHz 20 ns 25 nA @ 20 V 100 V 200mA -65°C ~ 175°C 800 mV @ 10 mA
VS-18TQ035STRLHM3

Таблицы данных

VS-18TQ035STRLHM3

VS-18TQ035STRLHM3

SCHOTTKY - D2PAK

Vishay General Semiconductor - Diodes Division

2308 1.22
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1400pF @ 5V, 1MHz - 2.5 mA @ 35 V 35 V 18A -55°C ~ 175°C 600 mV @ 18 A
STTH12R06D

Таблицы данных

STTH12R06D

STTH12R06D

DIODE GEN PURP 600V 12A TO220AC

STMicroelectronics

2492 1.06
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 45 ns 45 µA @ 600 V 600 V 12A 175°C (Max) 2.9 V @ 12 A
BYT51G-TAP

Таблицы данных

BYT51G-TAP

BYT51G-TAP

DIODE AVALANCHE 400V 1.5A SOD57

Vishay General Semiconductor - Diodes Division

3539 0.27
- +

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Расследования

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 4 µs 1 µA @ 400 V 400 V 1.5A -55°C ~ 175°C 1.1 V @ 1 A
GIB1404HE3_A/I

Таблицы данных

GIB1404HE3_A/I

GIB1404HE3_A/I

DIODE GEN PURP 200V 8A TO263AB

Vishay General Semiconductor - Diodes Division

2217 0.83
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 5 µA @ 200 V 200 V 8A -65°C ~ 150°C 975 mV @ 8 A
DSA10IM100UC-TUB DSA10IM100UC-TUB

DSA10IM100UC-TUB

POWER DIODE DISCRETES-SCHOTTKY T

IXYS

2470 1.29
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 68pF @ 24V, 1MHz - 200 µA @ 100 V 100 V 10A -55°C ~ 175°C 890 mV @ 10 A
VS-18TQ035STRRHM3

Таблицы данных

VS-18TQ035STRRHM3

VS-18TQ035STRRHM3

SCHOTTKY - D2PAK

Vishay General Semiconductor - Diodes Division

3699 1.22
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1400pF @ 5V, 1MHz - 2.5 mA @ 35 V 35 V 18A -55°C ~ 175°C 600 mV @ 18 A
VS-30ETH06STRR-M3

Таблицы данных

VS-30ETH06STRR-M3

VS-30ETH06STRR-M3

DIODE GEN PURP 600V 30A TO263AB

Vishay General Semiconductor - Diodes Division

3085 1.06
- +

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Расследования

Tape & Reel (TR) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 50 µA @ 600 V 600 V 30A -65°C ~ 175°C 2.6 V @ 30 A
BYT52D-TAP

Таблицы данных

BYT52D-TAP

BYT52D-TAP

DIODE AVALANCHE 200V 1.4A SOD57

Vishay General Semiconductor - Diodes Division

2328 0.27
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 200 ns 5 µA @ 200 V 200 V 1.4A -55°C ~ 175°C 1.3 V @ 1 A
GIB1401HE3_A/P

Таблицы данных

GIB1401HE3_A/P

GIB1401HE3_A/P

DIODE GEN PURP 50V 8A TO263AB

Vishay General Semiconductor - Diodes Division

2384 0.83
- +

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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 5 µA @ 50 V 50 V 8A -65°C ~ 150°C 975 mV @ 8 A
DSA15IM45UC-TUB DSA15IM45UC-TUB

DSA15IM45UC-TUB

POWER DIODE DISCRETES-SCHOTTKY T

IXYS

2934 1.29
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 227pF @ 4V, 1MHz - 250 µA @ 45 V 45 V 15A -55°C ~ 175°C 750 mV @ 15 A
VS-10ETS08FP-M3

Таблицы данных

VS-10ETS08FP-M3

VS-10ETS08FP-M3

DIODE GEN PURP 800V 10A TO220-2

Vishay General Semiconductor - Diodes Division

3521 1.23
- +

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Расследования

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 50 µA @ 800 V 800 V 10A -40°C ~ 150°C 1.1 V @ 10 A
Total 48193 Records«Prev1... 758759760761762763764765...2410Next»
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