Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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EGP31C-E3/CDIODE GEN PURP 150V 3A DO201AD |
2271 | 0.81 |
ДобавитьРасследования |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 1 µA @ 150 V | 150 V | 3A | -65°C ~ 175°C | 950 mV @ 3 A | ||
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Таблицы данных |
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RS3AHE3_A/HDIODE GEN PURP 50V 3A DO214AB |
2777 | 0.27 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | ||
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Таблицы данных |
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VS-10ETF06STRL-M3DIODE GEN PURP 600V 10A D2PAK |
3074 | 1.19 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 200 ns | 100 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |||
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Таблицы данных |
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FCQS30AU045DIODE SCHOTTKY 45V 30A TO-220 FU |
3036 | 0.68 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 600 µA @ 45 V | 45 V | 30A | -40°C ~ 150°C | 600 mV @ 15 A | |||
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UF5404GPL-TPDIODE ULT FAST GPP 3A DO-201AD |
3960 | 0.26 |
ДобавитьРасследования |
- | RoHS | - | - | Last Time Buy | - | - | - | - | - | - | - | - | |||
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Таблицы данных |
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EGP31D-E3/CDIODE GEN PURP 200V 3A DO201AD |
2690 | 0.81 |
ДобавитьРасследования |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 2 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 950 mV @ 3 A | ||
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Таблицы данных |
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RS3BHE3_A/HDIODE GEN PURP 100V 3A DO214AB |
3569 | 0.27 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | ||
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Таблицы данных |
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SD125SA45B.T1PIV 45V IO 15A CHIP SIZE 125MIL |
3776 | 1.20 |
ДобавитьРасследования |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 800pF @ 5V, 1MHz | - | 1.5 mA @ 45 V | 45 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A | |||
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Таблицы данных |
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MBRB745TRDIODE SCHOTTKY 45V 7.5A D2PAK |
2172 | 0.26 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 7.5A | -55°C ~ 150°C | 840 mV @ 15 A | |||
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Таблицы данных |
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EGP51A-E3/CDIODE GEN PURP 50V 5A DO201AD |
3534 | 0.81 |
ДобавитьРасследования |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 5A | -65°C ~ 175°C | 960 mV @ 5 A | ||
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Таблицы данных |
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RS3DHE3_A/HDIODE GEN PURP 200V 3A DO214AB |
3154 | 0.27 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | ||
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Таблицы данных |
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SD125SB45A.T1PIV 45V IO 15A CHIP SIZE 125MIL |
3167 | 1.20 |
ДобавитьРасследования |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 800pF @ 5V, 1MHz | - | 400 µA @ 45 V | 45 V | 15A | -55°C ~ 175°C | 640 mV @ 15 A | |||
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Таблицы данных |
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MBRB760TRDIODE SCHOTTKY 60V 7.5A D2PAK |
2373 | 0.26 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 7.5A | -55°C ~ 150°C | 750 mV @ 7.5 A | |||
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Таблицы данных |
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EGP51B-E3/CDIODE GEN PURP 100V 5A DO201AD |
2362 | 0.81 |
ДобавитьРасследования |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 5A | -65°C ~ 175°C | 960 mV @ 5 A | ||
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Таблицы данных |
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RS3GHE3_A/HDIODE GEN PURP 400V 3A DO214AB |
2694 | 0.27 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | ||
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Таблицы данных |
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VS-APU3006L-N3DIODE GEN PURP 600V 30A TO247AD |
2385 | 1.25 |
ДобавитьРасследования |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 30 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 2 V @ 30 A | ||
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Таблицы данных |
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SD125SB45B.T1PIV 45V IO 15A CHIP SIZE 125MIL |
3841 | 1.20 |
ДобавитьРасследования |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 800pF @ 5V, 1MHz | - | 400 µA @ 45 V | 45 V | 15A | -55°C ~ 175°C | 640 mV @ 15 A | |||
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Таблицы данных |
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UGB8JTHE3_A/IDIODE GEN PURP 600V 8A TO263AB |
2050 | 1.04 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 30 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.75 V @ 8 A | ||
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Таблицы данных |
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V8P6-M3/86ADIODE SCHOTTKY 60V 4.2A TO277A |
2726 | 0.27 |
ДобавитьРасследования |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 µA @ 60 V | 60 V | 4.2A | -40°C ~ 150°C | 610 mV @ 8 A | ||
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Таблицы данных |
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EGP51C-E3/CDIODE GEN PURP 150V 5A DO201AD |
3483 | 0.81 |
ДобавитьРасследования |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 5A | -65°C ~ 175°C | 960 mV @ 5 A |
Запрос котировок
