Diodes-Rectifiers-Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	Цены	А	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
Таблицы данных	V20150SG-M3/4W DIODE SCHOTTKY 20A 150V TO-220AB Vishay General Semiconductor - Diodes Division	3632	0.67	- + Добавить Расследования	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 150 V	150 V	20A	-55°C ~ 150°C	1.6 V @ 20 A
Таблицы данных	FCHS30A12 DIODE SCHOTTKY 120V 30A TO-220 F KYOCERA AVX	2252	0.75	- + Добавить Расследования	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 120 V	120 V	30A	-40°C ~ 150°C	900 mV @ 15 A
Таблицы данных	SB380-T DIODE SCHOTTKY 80V 3A DO201AD Diodes Incorporated	2365	0.27	- + Добавить Расследования	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 80 V	80 V	3A	-65°C ~ 150°C	790 mV @ 3 A
Таблицы данных	EG1A DIODE GEN PURP 600V 600MA AXIAL Sanken	3067	0.26	- + Добавить Расследования	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	100 ns	100 µA @ 600 V	600 V	600mA	-40°C ~ 150°C	2 V @ 600 mA
Таблицы данных	BYM36E-TR DIODE AVALANCHE 1KV 1.5A SOD64 Vishay General Semiconductor - Diodes Division	2241	0.53	- + Добавить Расследования	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	150 ns	5 µA @ 1000 V	1000 V	1.5A	-55°C ~ 175°C	1.78 V @ 3 A
Таблицы данных	VS-10ETF06STRR-M3 DIODE GEN PURP 600V 10A D2PAK Vishay General Semiconductor - Diodes Division	2005	1.15	- + Добавить Расследования	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	200 ns	100 µA @ 600 V	600 V	10A	-40°C ~ 150°C	1.2 V @ 10 A
Таблицы данных	VS-20TQ035-M3 DIODE SCHOTTKY 20A TO-220 Vishay General Semiconductor - Diodes Division	3302	0.67	- + Добавить Расследования	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	1400pF @ 5V, 1MHz	-	2.7 mA @ 35 V	35 V	20A	-55°C ~ 150°C	730 mV @ 40 A
Таблицы данных	FCHS10A12 DIODE SCHOTTKY 120V 10A TO-220 F KYOCERA AVX	2495	0.75	- + Добавить Расследования	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 120 V	120 V	10A	-40°C ~ 150°C	860 mV @ 10 A
Таблицы данных	CMS16(TE12L,Q,M) DIODE SCHOTTKY 40V 3A MFLAT Toshiba Semiconductor and Storage	2568	0.27	- + Добавить Расследования	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	200 µA @ 40 V	40 V	3A	-40°C ~ 150°C	550 mV @ 3 A
Таблицы данных	EG01 DIODE GEN PURP 400V 700MA AXIAL Sanken	3354	0.26	- + Добавить Расследования	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	100 ns	50 µA @ 400 V	400 V	700mA	-40°C ~ 150°C	2 V @ 700 mA
Таблицы данных	BYT56K-TR DIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division	3067	0.53	- + Добавить Расследования	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	100 ns	5 µA @ 800 V	800 V	3A	-55°C ~ 175°C	1.4 V @ 3 A
Таблицы данных	VS-10ETF10STRL-M3 DIODE GEN PURP 1KV 10A D2PAK Vishay General Semiconductor - Diodes Division	3273	1.15	- + Добавить Расследования	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	310 ns	100 µA @ 1000 V	1000 V	10A	-40°C ~ 150°C	1.33 V @ 10 A
Таблицы данных	VS-20TQ040-M3 DIODE SCHOTTKY 20A TO-220 Vishay General Semiconductor - Diodes Division	3163	0.67	- + Добавить Расследования	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	1400pF @ 5V, 1MHz	-	2.7 mA @ 40 V	40 V	20A	-55°C ~ 150°C	730 mV @ 40 A
Таблицы данных	FRQS20A045 DIODE SCHOTTKY 45V 20A TO-220 FU KYOCERA AVX	3995	0.75	- + Добавить Расследования	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	600 µA @ 45 V	45 V	20A	-40°C ~ 150°C	570 mV @ 20 A
Таблицы данных	EG01CV0 DIODE GEN PURP 1KV 500MA AXIAL Sanken	2488	0.27	- + Добавить Расследования	Tape & Box (TB)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	100 ns	50 µA @ 1000 V	1000 V	500mA	-40°C ~ 150°C	3.3 V @ 500 mA
Таблицы данных	EG01A DIODE GEN PURP 600V 500MA AXIAL Sanken	2454	0.26	- + Добавить Расследования	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	100 ns	100 µA @ 600 V	600 V	500mA	-40°C ~ 150°C	2 V @ 500 mA
Таблицы данных	BYW74TR DIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division	2807	0.53	- + Добавить Расследования	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	200 ns	5 µA @ 400 V	400 V	3A	-55°C ~ 175°C	1.1 V @ 3 A
Таблицы данных	VS-10ETF10STRR-M3 DIODE GEN PURP 1KV 10A D2PAK Vishay General Semiconductor - Diodes Division	2673	1.15	- + Добавить Расследования	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	310 ns	100 µA @ 1000 V	1000 V	10A	-40°C ~ 150°C	1.33 V @ 10 A
Таблицы данных	BYWB29-100-E3/45 DIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division	2944	0.67	- + Добавить Расследования	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	25 ns	10 µA @ 100 V	100 V	8A	-65°C ~ 150°C	1.3 V @ 20 A
	FCH30AU10 DIODE SCHOTTKY 100V 30A TO-220 F KYOCERA AVX	2701	0.75	- + Добавить Расследования	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 100 V	100 V	30A	-40°C ~ 150°C	940 mV @ 15 A

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