Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
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Таблицы данных |
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EU01V0DIODE GEN PURP 400V 250MA AXIAL |
2689 | 0.24 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 250mA | -40°C ~ 150°C | 2.5 V @ 250 mA | |||
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Таблицы данных |
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SJPB-D4VLDIODE SCHOTTKY SMD |
2990 | 0.14 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 1 V | 40 V | 1A | -40°C ~ 150°C | 550 mV @ 1 A | |||
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Таблицы данных |
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RSFDLHR3GDIODE GEN PURP 200V 500MA SUBSMA |
2885 | 0.21 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | ||
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Таблицы данных |
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MBR540MFST3GDIODE SCHOTTKY 40V 5A 5DFN |
3454 | 0.62 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 40 V | 40 V | 5A | -40°C ~ 175°C | 580 mV @ 5 A | |||
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Таблицы данных |
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V8P6HM3_A/HDIODE SCHOTTKY 60V 8A TO277A |
2616 | 0.29 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 µA @ 60 V | 60 V | 8A | -40°C ~ 150°C | 610 mV @ 8 A | ||
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Таблицы данных |
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SE30AFBHM3/6BDIODE GEN PURP 100V 1.4A DO221AC |
2716 | 0.13 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 1.4A (DC) | -55°C ~ 175°C | 1.1 V @ 3 A | ||
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Таблицы данных |
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EU01V1DIODE GEN PURP 400V 250MA AXIAL |
3735 | 0.24 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 250mA | -40°C ~ 150°C | 2.5 V @ 250 mA | |||
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Таблицы данных |
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SJPB-D6VLDIODE SCHOTTKY SMD |
2525 | 0.14 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 1A | -40°C ~ 150°C | 680 mV @ 1 A | |||
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Таблицы данных |
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RSFGLHR3GDIODE GEN PURP 400V 500MA SUBSMA |
3419 | 0.21 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | ||
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Таблицы данных |
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XBS204S19R-GSCHOTTKY BARRIER DIODE |
3519 | 0.25 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 180pF @ 1V, 1MHz | 51 ns | 200 µA @ 60 V | 40 V | 2A | 125°C | 540 mV @ 2 A | |||
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Таблицы данных |
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EGP20KDIODE GEN PURP 800V 2A DO15 |
3340 | 0.29 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 2A | -65°C ~ 150°C | 1.7 V @ 2 A | |||
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Таблицы данных |
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SE30AFDHM3/6BDIODE GEN PURP 200V 1.4A DO221AC |
2142 | 0.13 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 1.4A (DC) | -55°C ~ 175°C | 1.1 V @ 3 A | ||
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Таблицы данных |
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EU01WDIODE GEN PURP 400V 250MA AXIAL |
2691 | 0.24 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 250mA | -40°C ~ 150°C | 2.5 V @ 250 mA | |||
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Таблицы данных |
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SJPB-D9VRDIODE SCHOTTKY SMD |
3029 | 0.14 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1A | -40°C ~ 150°C | 850 mV @ 1 A | |||
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Таблицы данных |
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RSFKLHR3GDIODE GEN PURP 800V 500MA SUBSMA |
3073 | 0.21 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | ||
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Таблицы данных |
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XBS204V19R-GSCHOTTKY BARRIER DIODE |
2278 | 0.25 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 2A | 125°C | 490 mV @ 2 A | |||
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Таблицы данных |
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EGP20ADIODE GEN PURP 50V 2A DO15 |
2171 | 0.29 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 2A | -65°C ~ 150°C | 950 mV @ 2 A | |||
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Таблицы данных |
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SE30AFGHM3/6BDIODE GEN PURP 400V 1.4A DO221AC |
2019 | 0.13 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 1.4A (DC) | -55°C ~ 175°C | 1.1 V @ 3 A | ||
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Таблицы данных |
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EU02AV0DIODE GEN PURP 600V 1A AXIAL |
3585 | 0.24 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 1.4 V @ 1 A | |||
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Таблицы данных |
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SJPB-H4VLDIODE SCHOTTKY SMD |
3867 | 0.14 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 2A | -40°C ~ 150°C | 550 mV @ 2 A |
Запрос котировок
