Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
GL41AHE3/96

Таблицы данных

GL41AHE3/96

GL41AHE3/96

DIODE GEN PURP 50V 1A DO213AB

Vishay General Semiconductor - Diodes Division

2330 0.14
- +

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Расследования

Tape & Reel (TR) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 4V, 1MHz - 10 µA @ 50 V 50 V 1A -65°C ~ 175°C 1.1 V @ 1 A
ESH3C V6G

Таблицы данных

ESH3C V6G

ESH3C V6G

DIODE GEN PURP 150V 3A DO214AB

Taiwan Semiconductor Corporation

3136 0.20
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 45pF @ 4V, 1MHz 20 ns 5 µA @ 150 V 150 V 3A -55°C ~ 175°C -
ES3G

Таблицы данных

ES3G

ES3G

DIODE GEN PURP 400V 3A DO214AB

Taiwan Semiconductor Corporation

2688 0.25
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C -
SJPB-D9

Таблицы данных

SJPB-D9

SJPB-D9

DIODE SCHOTTKY 90V 1A SJP

Sanken

2032 0.24
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 90 V 90 V 1A -40°C ~ 150°C 850 mV @ 1 A
SS1FL3HM3/I

Таблицы данных

SS1FL3HM3/I

SS1FL3HM3/I

DIODE SCHOTTKY 30V 1A DO-219AB

Vishay General Semiconductor - Diodes Division

2098 0.11
- +

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Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 130pF @ 4V, 1MHz - 200 µA @ 30 V 30 V 1A -55°C ~ 150°C 480 mV @ 1 A
UF5400-E3/73

Таблицы данных

UF5400-E3/73

UF5400-E3/73

DIODE GEN PURP 50V 3A DO201AD

Vishay General Semiconductor - Diodes Division

2394 0.23
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 45pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C 1 V @ 3 A
GL41DHE3/96

Таблицы данных

GL41DHE3/96

GL41DHE3/96

DIODE GEN PURP 200V 1A DO213AB

Vishay General Semiconductor - Diodes Division

3674 0.14
- +

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Tape & Reel (TR) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 4V, 1MHz - 10 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.1 V @ 1 A
ESH3D V6G

Таблицы данных

ESH3D V6G

ESH3D V6G

DIODE GEN PURP 200V 3A DO214AB

Taiwan Semiconductor Corporation

3187 0.20
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 45pF @ 4V, 1MHz 20 ns 5 µA @ 200 V 200 V 3A -55°C ~ 175°C -
CMR1-02 BK PBFREE

Таблицы данных

CMR1-02 BK PBFREE

CMR1-02 BK PBFREE

DIODE GEN PURP 200V 1A SMB

Central Semiconductor Corp

2915 0.25
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 10 µA @ 200 V 200 V 1A -65°C ~ 150°C 1.1 V @ 1 A
SJPJ-D3

Таблицы данных

SJPJ-D3

SJPJ-D3

DIODE SCHOTTKY 30V 1A SJP

Sanken

3014 0.24
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 30 V 30 V 1A -40°C ~ 150°C 450 mV @ 1 A
SS2FL3-M3/I

Таблицы данных

SS2FL3-M3/I

SS2FL3-M3/I

DIODE SCHOTTKY 30V 2A DO-219AB

Vishay General Semiconductor - Diodes Division

2325 0.11
- +

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Расследования

Tape & Reel (TR) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 145pF @ 4V, 1MHz - 200 µA @ 30 V 30 V 2A -55°C ~ 150°C 540 mV @ 2 A
CD214C-B3100R

Таблицы данных

CD214C-B3100R

CD214C-B3100R

DIO SBD VRRM 100V 3A SMC

Bourns Inc.

2584 0.23
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 180pF @ 4V, 1MHz - 500 µA @ 100 V 100 V 3A -55°C ~ 150°C 850 mV @ 3 A
GL41GHE3/96

Таблицы данных

GL41GHE3/96

GL41GHE3/96

DIODE GEN PURP 400V 1A DO213AB

Vishay General Semiconductor - Diodes Division

3945 0.14
- +

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Расследования

Tape & Reel (TR) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 4V, 1MHz - 10 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
MUR305S V6G

Таблицы данных

MUR305S V6G

MUR305S V6G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation

3974 0.20
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 5 µA @ 50 V 50 V 3A -55°C ~ 175°C -
AS1PK-M3/85A

Таблицы данных

AS1PK-M3/85A

AS1PK-M3/85A

DIODE AVALANCHE 800V 1.5A DO220

Vishay General Semiconductor - Diodes Division

2035 0.25
- +

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Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount 10.4pF @ 4V, 1MHz 1.5 µs 5 µA @ 800 V 800 V 1.5A (DC) -55°C ~ 175°C 1.15 V @ 1.5 A
SJPW-F6

Таблицы данных

SJPW-F6

SJPW-F6

DIODE SCHOTTKY 60V 1.5A SJP

Sanken

2251 0.24
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Last Time Buy Surface Mount - - 1 µA @ 60 V 60 V 1.5A -40°C ~ 150°C 700 mV @ 1.5 A
SS1FL4HM3/I

Таблицы данных

SS1FL4HM3/I

SS1FL4HM3/I

DIODE SCHOTTKY 40V 1A DO-219AB

Vishay General Semiconductor - Diodes Division

3150 0.11
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 115pF @ 4V, 1MHz - 200 µA @ 40 V 40 V 1A -55°C ~ 150°C 500 mV @ 1 A
NRVTS5100ETFSWFTWG

Таблицы данных

NRVTS5100ETFSWFTWG

NRVTS5100ETFSWFTWG

DIODE SCHOTTKY 8WDFN

onsemi

2996 0.23
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 26.5pF @ 100V, 1MHz - 50 µA @ 100 V 100 V 5A -65°C ~ 175°C 1 V @ 5 A
GL41JHE3/96

Таблицы данных

GL41JHE3/96

GL41JHE3/96

DIODE GEN PURP 600V 1A DO213AB

Vishay General Semiconductor - Diodes Division

3531 0.14
- +

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Расследования

Tape & Reel (TR) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 4V, 1MHz - 10 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
MUR310S V6G

Таблицы данных

MUR310S V6G

MUR310S V6G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

2667 0.20
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C -
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