Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
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Таблицы данных |
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VBT2045BP-E3/4WDIODE SCHOTTKY 45V 20A TO263AB |
3160 | 1.23 |
ДобавитьРасследования |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2 mA @ 45 V | 45 V | 20A (DC) | 200°C (Max) | 660 mV @ 20 A | ||
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SCS208AGC17DIODE SCHOTTKY 650V 8A TO220AC |
3187 | 4.09 |
ДобавитьРасследования |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 291pF @ 1V, 1MHz | 0 ns | 160 µA @ 600 V | 650 V | 8A (DC) | 175°C | 1.55 V @ 8 A | |||
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S2MF_R1_00001SURFACE MOUNT RECTIFIER |
2452 | 0.45 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |||
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Таблицы данных |
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ES1GLW RVGDIODE GEN PURP 400V 1A SOD123W |
2702 | 0.47 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.3 V @ 1 A | |||
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Таблицы данных |
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SBYV27-150-E3/54DIODE GEN PURP 150V 2A DO204AC |
2151 | 0.55 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 15 ns | 5 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 1.07 V @ 3 A | |||
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Таблицы данных |
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GI250-2-E3/54DIODE GEN PURP 2KV 250MA DO204 |
2651 | 0.61 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 3pF @ 4V, 1MHz | 2 µs | 5 µA @ 2000 V | 2000 V | 250mA | -65°C ~ 175°C | 3.5 V @ 250 mA | ||
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Таблицы данных |
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STTH806G-TRDIODE GEN PURP 600V 8A D2PAK |
2804 | 2.30 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 55 ns | 8 µA @ 600 V | 600 V | 8A | 175°C (Max) | 1.85 V @ 8 A | |||
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Таблицы данных |
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IDH08G65C5XKSA2DIODE SCHOTTKY 650V 8A TO220-2-1 |
2063 | 4.11 |
ДобавитьРасследования |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 140 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A | ||
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S2MGF_R1_00001SURFACE MOUNT RECTIFIER |
3907 | 0.45 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |||
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Таблицы данных |
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ES1JLW RVGDIODE GEN PURP 600V 1A SOD123W |
3343 | 0.47 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A | |||
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Таблицы данных |
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BYG10Y-M3/TRDIODE AVALANCHE 1.6KV 1.5A |
2440 | 0.51 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1600 V | 1600 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |||
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Таблицы данных |
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GI250-4-E3/54DIODE GEN PURP 4KV 250MA DO204 |
2994 | 0.61 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 3pF @ 4V, 1MHz | 2 µs | 5 µA @ 4000 V | 4000 V | 250mA | -65°C ~ 175°C | 3.5 V @ 250 mA | ||
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Таблицы данных |
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VS-ETH0806FP-M3DIODE GEN PURP 600V 8A TO220-2 |
2940 | 1.25 |
ДобавитьРасследования |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 21 ns | 12 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.65 V @ 8 A | ||
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Таблицы данных |
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STPSC10H065DDIODE SCHOTTKY 650V 10A TO220AC |
3720 | 4.15 |
ДобавитьРасследования |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 480pF @ 0V, 1MHz | 0 ns | 100 µA @ 650 V | 650 V | 10A | -40°C ~ 175°C | 1.75 V @ 10 A | |||
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Таблицы данных |
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PMEG100T10ELRXPMEG100T10ELR/SOD123W/SOD2 |
3779 | 0.43 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 125pF @ 1V, 1MHz | 11.5 ns | 900 nA @ 100 V | 100 V | 1A | 175°C | 750 mV @ 1 A | |||
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Таблицы данных |
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SS315LW RVGDIODE SCHOTTKY 150V 3A SOD123W |
2085 | 0.47 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |||
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Таблицы данных |
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VSSB410S-M3/52TDIODE SCHOTTKY 100V 1.9A DO214AA |
3733 | 0.49 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 230pF @ 4V, 1MHz | - | 250 µA @ 100 V | 100 V | 1.9A (DC) | -40°C ~ 150°C | 770 mV @ 4 A | ||
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Таблицы данных |
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RS3MB-T R5G150NS 3A 1000V FAST RECOVERY REC |
3331 | 0.51 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 3A (DC) | -55°C ~ 150°C | 1.3 V @ 3 A | |||
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Таблицы данных |
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STPSC4H065DLFSILICON CARBIDE DIODES |
3456 | 2.32 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 245pF @ 0V, 1MHz | 0 ns | 40 µA @ 650 V | 650 V | 4A | -40°C ~ 175°C | 1.55 V @ 4 A | ||
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Таблицы данных |
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STTH3010WYDIODE GEN PURP 1KV 30A DO247-2 |
3285 | 4.21 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 15 µA @ 1000 V | 1000 V | 30A | -40°C ~ 175°C | 2 V @ 30 A |
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