Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
RS3J R6 RS3J R6

RS3J R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2620 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 250 ns 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.3 V @ 3 A
2A01G B0G

Таблицы данных

2A01G B0G

2A01G B0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation

2132 0.00
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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.1 V @ 2 A
ES3D R6G ES3D R6G

ES3D R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2800 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
2A01GHB0G

Таблицы данных

2A01GHB0G

2A01GHB0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation

3604 0.00
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Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.1 V @ 2 A
S4M M6 S4M M6

S4M M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3622 0.00
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 1000 V 1000 V 4A -55°C ~ 150°C 1.15 V @ 4 A
2A02G B0G

Таблицы данных

2A02G B0G

2A02G B0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

3297 0.00
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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.1 V @ 2 A
S12JC R6G S12JC R6G

S12JC R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3617 0.00
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 78pF @ 4V, 1MHz - 1 µA @ 600 V 600 V 12A (DC) -55°C ~ 150°C 1.1 V @ 12 A
2A02GHB0G

Таблицы данных

2A02GHB0G

2A02GHB0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

2196 0.00
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Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.1 V @ 2 A
MUR305S R6 MUR305S R6

MUR305S R6

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

2127 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 50 V 50 V 3A -55°C ~ 175°C 875 mV @ 3 A
2A03G B0G

Таблицы данных

2A03G B0G

2A03G B0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

2049 0.00
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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 1 V @ 2 A
HS3B R6 HS3B R6

HS3B R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

3862 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C 1 V @ 3 A
2A03GHB0G

Таблицы данных

2A03GHB0G

2A03GHB0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

3166 0.00
- +

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Расследования

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 1 V @ 2 A
S10JC M6 S10JC M6

S10JC M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2241 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz - 1 µA @ 600 V 600 V 10A (DC) -55°C ~ 150°C 1.1 V @ 10 A
2A04G B0G

Таблицы данных

2A04G B0G

2A04G B0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

3707 0.00
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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 2A -55°C ~ 150°C 1 V @ 2 A
HS5F R7 HS5F R7

HS5F R7

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

3812 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
2A04GHB0G

Таблицы данных

2A04GHB0G

2A04GHB0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

3938 0.00
- +

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Расследования

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 2A -55°C ~ 150°C 1 V @ 2 A
ES3H R6 ES3H R6

ES3H R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2256 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 3A -55°C ~ 150°C 1.7 V @ 3 A
2A05G B0G

Таблицы данных

2A05G B0G

2A05G B0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

3465 0.00
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1 V @ 2 A
ES3F R6G ES3F R6G

ES3F R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2559 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 3A -55°C ~ 150°C 1.3 V @ 3 A
2A05GHB0G

Таблицы данных

2A05GHB0G

2A05GHB0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

2398 0.00
- +

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Расследования

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1 V @ 2 A
Total 48193 Records«Prev1... 23672368236923702371237223732374...2410Next»
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