Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SK56C R6 SK56C R6

SK56C R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3494 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 60 V 60 V 5A -55°C ~ 150°C 750 mV @ 5 A
1N4933GHB0G

Таблицы данных

1N4933GHB0G

1N4933GHB0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

2376 0.00
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Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.2 V @ 1 A
HS3F M6 HS3F M6

HS3F M6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

3396 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 3A -55°C ~ 150°C 1 V @ 3 A
1N4934G B0G

Таблицы данных

1N4934G B0G

1N4934G B0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

3855 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.2 V @ 1 A
SS35 R6 SS35 R6

SS35 R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3088 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 50 V 50 V 3A (DC) -55°C ~ 150°C 750 mV @ 3 A
ES3A R6G ES3A R6G

ES3A R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3873 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C 950 mV @ 3 A
1N4934GHB0G

Таблицы данных

1N4934GHB0G

1N4934GHB0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

2103 0.00
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Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.2 V @ 1 A
S3J R6 S3J R6

S3J R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2895 0.00
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.15 V @ 3 A
1N4935G B0G

Таблицы данных

1N4935G B0G

1N4935G B0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

2164 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.2 V @ 1 A
S3D R6 S3D R6

S3D R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2138 0.00
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 1.15 V @ 3 A
1N4935GHB0G

Таблицы данных

1N4935GHB0G

1N4935GHB0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

2197 0.00
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Расследования

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.2 V @ 1 A
HS3K R6 HS3K R6

HS3K R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2571 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 75 ns 10 µA @ 800 V 800 V 3A -55°C ~ 150°C 1.7 V @ 3 A
1N4936G B0G

Таблицы данных

1N4936G B0G

1N4936G B0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

2266 0.00
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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.2 V @ 1 A
SS34 R6G SS34 R6G

SS34 R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3615 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 40 V 40 V 3A (DC) -55°C ~ 125°C 500 mV @ 3 A
1N4936GHB0G

Таблицы данных

1N4936GHB0G

1N4936GHB0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

3275 0.00
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Расследования

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.2 V @ 1 A
SK82C R7 SK82C R7

SK82C R7

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3533 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 8A (DC) -55°C ~ 125°C 550 mV @ 8 A
1N4937G B0G

Таблицы данных

1N4937G B0G

1N4937G B0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

3839 0.00
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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.2 V @ 1 A
ES3A R6 ES3A R6

ES3A R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2596 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C 950 mV @ 3 A
1N4937GHB0G

Таблицы данных

1N4937GHB0G

1N4937GHB0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

3465 0.00
- +

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Расследования

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.2 V @ 1 A
SK59C R7 SK59C R7

SK59C R7

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3534 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 300 µA @ 90 V 90 V 5A -55°C ~ 150°C 850 mV @ 5 A
Total 48193 Records«Prev1... 23622363236423652366236723682369...2410Next»
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