Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() |
SIDC14D60E6X7SA1DIODE SWITCHING 600V WAFER |
2117 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 30A (DC) | -55°C ~ 150°C | 1.25 V @ 30 A | |||
![]() Таблицы данных |
![]() |
HER604G A0GDIODE GEN PURP 300V 6A R-6 |
3089 | 0.00 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |||
![]() Таблицы данных |
![]() |
SIDC08D60C8X1SA3DIODE GEN PURP 600V 30A WAFER |
3093 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 30A (DC) | -40°C ~ 175°C | 1.95 V @ 30 A | |||
![]() Таблицы данных |
![]() |
HER605G A0GDIODE GEN PURP 400V 6A R-6 |
2199 | 0.00 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 6A | -55°C ~ 150°C | 1.3 V @ 6 A | |||
![]() |
![]() |
SIDC02D60C8F1SA1DIODE SWITCHING 600V 6A WAFER |
3718 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 6A (DC) | -40°C ~ 175°C | 1.95 V @ 6 A | |||
![]() Таблицы данных |
![]() |
HER606G A0GDIODE GEN PURP 600V 6A R-6 |
3991 | 0.00 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 6A | -55°C ~ 150°C | 1.7 V @ 6 A | |||
![]() Таблицы данных |
![]() |
SIDC14D60C8X1SA1DIODE GEN PURP 600V 50A WAFER |
2803 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 50A (DC) | -40°C ~ 175°C | 1.9 V @ 50 A | |||
![]() Таблицы данных |
![]() |
HT11G A0GDIODE GEN PURP 50V 1A TS-1 |
2041 | 0.00 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |||
![]() Таблицы данных |
![]() |
SIDC09D60F6X1SA1DIODE SWITCHING 600V WAFER |
3798 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 30A (DC) | -40°C ~ 175°C | 1.6 V @ 30 A | |||
![]() Таблицы данных |
![]() |
HT12G A0GDIODE GEN PURP 100V 1A TS-1 |
2866 | 0.00 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |||
![]() |
![]() |
SIDC04D60F6X7SA1DIODE SWITCHING 600V WAFER |
2935 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 9A (DC) | -40°C ~ 175°C | 1.6 V @ 9 A | |||
![]() Таблицы данных |
![]() |
HT13G A0GDIODE GEN PURP 200V 1A TS-1 |
2078 | 0.00 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |||
![]() Таблицы данных |
![]() |
SIDC03D60F6X1SA1DIODE SWITCHING 600V WAFER |
3584 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 6A (DC) | -40°C ~ 175°C | 1.6 V @ 6 A | |||
![]() Таблицы данных |
![]() |
HT14G A0GDIODE GEN PURP 300V 1A TS-1 |
3687 | 0.00 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |||
![]() |
![]() |
SIDC06D60E6X7SA1DIODE SWITCHING 600V WAFER |
3681 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 150°C | 1.25 V @ 10 A | |||
![]() Таблицы данных |
![]() |
HT15G A0GDIODE GEN PURP 400V 1A TS-1 |
3347 | 0.00 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |||
![]() |
![]() |
SIDC14D60F6X7SA1DIODE SWITCHING 600V WAFER |
3690 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 45A (DC) | -40°C ~ 175°C | 1.6 V @ 45 A | |||
![]() Таблицы данных |
![]() |
HT16G A0GDIODE GEN PURP 600V 1A TS-1 |
2410 | 0.00 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |||
![]() Таблицы данных |
![]() |
SIDC09D60F6X1SA4DIODE SWITCHING 600V WAFER |
2982 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 30A (DC) | -40°C ~ 175°C | 1.6 V @ 30 A | |||
![]() Таблицы данных |
![]() |
HT17G A0GDIODE GEN PURP 800V 1A TS-1 |
3676 | 0.00 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |