Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SIDC14D60E6X7SA1 SIDC14D60E6X7SA1

SIDC14D60E6X7SA1

DIODE SWITCHING 600V WAFER

Infineon Technologies

2117 0.00
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 30A (DC) -55°C ~ 150°C 1.25 V @ 30 A
HER604G A0G

Таблицы данных

HER604G A0G

HER604G A0G

DIODE GEN PURP 300V 6A R-6

Taiwan Semiconductor Corporation

3089 0.00
- +

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Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 6A -55°C ~ 150°C 1 V @ 6 A
SIDC08D60C8X1SA3

Таблицы данных

SIDC08D60C8X1SA3

SIDC08D60C8X1SA3

DIODE GEN PURP 600V 30A WAFER

Infineon Technologies

3093 0.00
- +

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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 30A (DC) -40°C ~ 175°C 1.95 V @ 30 A
HER605G A0G

Таблицы данных

HER605G A0G

HER605G A0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

2199 0.00
- +

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Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 6A -55°C ~ 150°C 1.3 V @ 6 A
SIDC02D60C8F1SA1 SIDC02D60C8F1SA1

SIDC02D60C8F1SA1

DIODE SWITCHING 600V 6A WAFER

Infineon Technologies

3718 0.00
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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 6A (DC) -40°C ~ 175°C 1.95 V @ 6 A
HER606G A0G

Таблицы данных

HER606G A0G

HER606G A0G

DIODE GEN PURP 600V 6A R-6

Taiwan Semiconductor Corporation

3991 0.00
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 6A -55°C ~ 150°C 1.7 V @ 6 A
SIDC14D60C8X1SA1

Таблицы данных

SIDC14D60C8X1SA1

SIDC14D60C8X1SA1

DIODE GEN PURP 600V 50A WAFER

Infineon Technologies

2803 0.00
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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 50A (DC) -40°C ~ 175°C 1.9 V @ 50 A
HT11G A0G

Таблицы данных

HT11G A0G

HT11G A0G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation

2041 0.00
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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
SIDC09D60F6X1SA1

Таблицы данных

SIDC09D60F6X1SA1

SIDC09D60F6X1SA1

DIODE SWITCHING 600V WAFER

Infineon Technologies

3798 0.00
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 30A (DC) -40°C ~ 175°C 1.6 V @ 30 A
HT12G A0G

Таблицы данных

HT12G A0G

HT12G A0G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation

2866 0.00
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
SIDC04D60F6X7SA1 SIDC04D60F6X7SA1

SIDC04D60F6X7SA1

DIODE SWITCHING 600V WAFER

Infineon Technologies

2935 0.00
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 9A (DC) -40°C ~ 175°C 1.6 V @ 9 A
HT13G A0G

Таблицы данных

HT13G A0G

HT13G A0G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation

2078 0.00
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
SIDC03D60F6X1SA1

Таблицы данных

SIDC03D60F6X1SA1

SIDC03D60F6X1SA1

DIODE SWITCHING 600V WAFER

Infineon Technologies

3584 0.00
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 6A (DC) -40°C ~ 175°C 1.6 V @ 6 A
HT14G A0G

Таблицы данных

HT14G A0G

HT14G A0G

DIODE GEN PURP 300V 1A TS-1

Taiwan Semiconductor Corporation

3687 0.00
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 300 V 300 V 1A -55°C ~ 150°C 1 V @ 1 A
SIDC06D60E6X7SA1 SIDC06D60E6X7SA1

SIDC06D60E6X7SA1

DIODE SWITCHING 600V WAFER

Infineon Technologies

3681 0.00
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 10A (DC) -55°C ~ 150°C 1.25 V @ 10 A
HT15G A0G

Таблицы данных

HT15G A0G

HT15G A0G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation

3347 0.00
- +

Добавить

Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
SIDC14D60F6X7SA1 SIDC14D60F6X7SA1

SIDC14D60F6X7SA1

DIODE SWITCHING 600V WAFER

Infineon Technologies

3690 0.00
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 45A (DC) -40°C ~ 175°C 1.6 V @ 45 A
HT16G A0G

Таблицы данных

HT16G A0G

HT16G A0G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation

2410 0.00
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
SIDC09D60F6X1SA4

Таблицы данных

SIDC09D60F6X1SA4

SIDC09D60F6X1SA4

DIODE SWITCHING 600V WAFER

Infineon Technologies

2982 0.00
- +

Добавить

Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 30A (DC) -40°C ~ 175°C 1.6 V @ 30 A
HT17G A0G

Таблицы данных

HT17G A0G

HT17G A0G

DIODE GEN PURP 800V 1A TS-1

Taiwan Semiconductor Corporation

3676 0.00
- +

Добавить

Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
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