Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
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Таблицы данных |
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SIDC14D60C6DIODE GEN PURP 600V 50A WAFER |
3736 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 50A (DC) | -40°C ~ 175°C | 1.9 V @ 50 A | |||
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Таблицы данных |
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20F1020 AMP SILCON RECTIFIER DO4 KK |
2674 | 1.87 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 10 µA @ 100 V | 100 V | 20A | -65°C ~ 150°C | 1.2 V @ 20 A | |||
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Таблицы данных |
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SIDC14D60C6YDIODE GEN PURP 600V 50A WAFER |
2162 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 50A (DC) | -40°C ~ 175°C | 1.9 V @ 50 A | |||
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Таблицы данных |
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20F0520 AMP SILCON RECTIFIER DO4 KK |
2786 | 1.87 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 50 V | 20A | - | - | |||
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Таблицы данных |
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SIDC14D60E6X1SA1DIODE GEN PURP 600V 30A WAFER |
3443 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 30A (DC) | -55°C ~ 150°C | 1.25 V @ 30 A | |||
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Таблицы данных |
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S3G-Q-CTCUT-TAPE VERSION. STANDARD RECO |
2860 | 1.87 |
ДобавитьРасследования |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 400 V | 400 V | 3A | -50°C ~ 150°C | 1.15 V @ 3 A | |||
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Таблицы данных |
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SIDC14D60E6YX1SA1DIODE GEN PURP 600V 30A WAFER |
3970 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 30A (DC) | -55°C ~ 150°C | 1.25 V @ 30 A | |||
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Таблицы данных |
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S3M-Q-CTCUT-TAPE VERSION. STANDARD RECO |
3272 | 1.87 |
ДобавитьРасследования |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 10 µA @ 1000 V | 1000 V | 3A | -50°C ~ 150°C | 1.15 V @ 3 A | |||
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Таблицы данных |
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SIDC14D60F6X1SA2DIODE GEN PURP 600V 45A WAFER |
2447 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 45A (DC) | -40°C ~ 150°C | 1.6 V @ 45 A | |||
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Таблицы данных |
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20FR4020 AMP SILCON RECTIFIER DO4 AK |
2506 | 1.89 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 10 µA @ 400 V | 400 V | 20A | -65°C ~ 150°C | 1.2 V @ 20 A | |||
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Таблицы данных |
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SIDC161D170HX1SA2DIODE GEN PURP 1.7KV 300A WAFER |
2420 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 27 µA @ 1700 V | 1700 V | 300A (DC) | -55°C ~ 150°C | 1.8 V @ 300 A | |||
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Таблицы данных |
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S5G-CTCUT-TAPE VERSION. STANDARD RECO |
2758 | 1.89 |
ДобавитьРасследования |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 10 µA @ 50 V | 400 V | 5A | -50°C ~ 150°C | 1.1 V @ 5 A | |||
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Таблицы данных |
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SIDC16D60SIC3DIODE SCHOTTKY 600V 5A WAFER |
2532 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 170pF @ 1V, 1MHz | 0 ns | 200 µA @ 600 V | 600 V | 5A (DC) | -55°C ~ 175°C | 1.7 V @ 5 A | |||
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Таблицы данных |
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S2X-CTCUT-TAPE VERSION. STANDARD RECO |
2384 | 1.91 |
ДобавитьРасследования |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 1800 V | 1800 V | 2A | -50°C ~ 150°C | 1.15 V @ 2 A | |||
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Таблицы данных |
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SIDC19D60SIC3DIODE SCHOTTKY 600V 6A WAFER |
2325 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | 200 µA @ 600 V | 600 V | 6A (DC) | -55°C ~ 175°C | 1.7 V @ 6 A | |||
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Таблицы данных |
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S5K-CTCUT-TAPE VERSION. STANDARD RECO |
2472 | 1.93 |
ДобавитьРасследования |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 10 µA @ 50 V | 800 V | 5A | -50°C ~ 150°C | 1.1 V @ 5 A | |||
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Таблицы данных |
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SIDC20D60C6DIODE GEN PURP 600V 75A WAFER |
3386 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 75A (DC) | -40°C ~ 175°C | 1.9 V @ 75 A | |||
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Таблицы данных |
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P2000ATLST Rect, 50V, 20A |
3516 | 1.93 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 5 V | 50 V | 20A | -50°C ~ 175°C | 1.1 V @ 20 A | |||
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Таблицы данных |
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SIDC23D120E6X1SA1DIODE GEN PURP 1.2KV 25A WAFER |
3419 | 0.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 25A (DC) | -55°C ~ 150°C | 1.9 V @ 25 A | |||
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Таблицы данных |
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P2000BTLST Rect, 100V, 20A |
2547 | 1.95 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 100 V | 100 V | 20A | -50°C ~ 175°C | 1.1 V @ 20 A |
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