Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
BA159GPE-E3/54

Таблицы данных

BA159GPE-E3/54

BA159GPE-E3/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

2362 0.18
- +

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Расследования

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.3 V @ 1 A
QH03BZ600

Таблицы данных

QH03BZ600

QH03BZ600

DIODE GEN PURP 600V 3A TO263AB

Power Integrations

2905 0.80
- +

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Расследования

Tape & Reel (TR) Qspeed™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 11pF @ 10V, 1MHz 9.8 ns 250 µA @ 600 V 600 V 3A 150°C (Max) 3 V @ 3 A
RGP10BE-E3/54

Таблицы данных

RGP10BE-E3/54

RGP10BE-E3/54

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3437 0.18
- +

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Расследования

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A -65°C ~ 175°C 1.3 V @ 1 A
RFN10NS8DFHTL RFN10NS8DFHTL

RFN10NS8DFHTL

SUPER FAST RECOVERY DIODE (AEC-Q

Rohm Semiconductor

2472 2.94
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 40 ns 10 µA @ 800 V 800 V 10A 150°C 2.1 V @ 5 A
RGP10DE-E3/54

Таблицы данных

RGP10DE-E3/54

RGP10DE-E3/54

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2048 0.18
- +

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Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.3 V @ 1 A
RFUH10NS4STL

Таблицы данных

RFUH10NS4STL

RFUH10NS4STL

DIODE GEN PURP 430V 10A LPDS

Rohm Semiconductor

2826 0.80
- +

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Tape & Reel (TR) RoHS - - Active - - - - - - - -
RGP10JE-E3/54

Таблицы данных

RGP10JE-E3/54

RGP10JE-E3/54

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3987 0.18
- +

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Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.3 V @ 1 A
NGTD8R65F2WP

Таблицы данных

NGTD8R65F2WP

NGTD8R65F2WP

DIODE GEN PURP 650V DIE

onsemi

3454 0.80
- +

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Расследования

Bulk RoHS - Standard Active Surface Mount - - 1 µA @ 650 V 650 V - 175°C (Max) 2.8 V @ 30 A
RGP10KE-E3/54

Таблицы данных

RGP10KE-E3/54

RGP10KE-E3/54

DIODE GEN PURP 800V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3312 0.18
- +

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Расследования

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.3 V @ 1 A
VS-MBRB1635-M3 VS-MBRB1635-M3

VS-MBRB1635-M3

DIODE SCHOTTKY 35V 16A TO263AB

Vishay General Semiconductor - Diodes Division

2195 0.81
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1400pF @ 5V, 1MHz - 200 µA @ 35 V 35 V 16A -65°C ~ 150°C 630 mV @ 16 A
RGP10ME-E3/54

Таблицы данных

RGP10ME-E3/54

RGP10ME-E3/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

3041 0.18
- +

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Расследования

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.3 V @ 1 A
NRTS30120MFST3G

Таблицы данных

NRTS30120MFST3G

NRTS30120MFST3G

120V30A TRENCH SCHOTTKY

onsemi

2620 0.81
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1470pF @ 1V, 1MHz - 150 µA @ 120 V 120 V 30A (DC) -55°C ~ 175°C 950 mV @ 30 A
SDT5100LP5-7

Таблицы данных

SDT5100LP5-7

SDT5100LP5-7

DIODE SCHOTTKY 100V 5A POWERDI 5

Diodes Incorporated

3976 0.18
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 4 µA @ 100 V 100 V 5A -55°C ~ 150°C 820 mV @ 5 A
VS-18TQ045S-M3

Таблицы данных

VS-18TQ045S-M3

VS-18TQ045S-M3

DIODE SCHOTTKY 45V 18A D2PAK

Vishay General Semiconductor - Diodes Division

2022 0.81
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1400pF @ 5V, 1MHz - 2.5 mA @ 35 V 45 V 18A -55°C ~ 175°C 600 mV @ 18 A
SDT5100LP5-7D

Таблицы данных

SDT5100LP5-7D

SDT5100LP5-7D

DIODE SCHOTTKY 100V 5A POWERDI 5

Diodes Incorporated

2181 0.18
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 4 µA @ 100 V 100 V 5A -55°C ~ 150°C 820 mV @ 5 A
BYV29B-300HE3_A/I

Таблицы данных

BYV29B-300HE3_A/I

BYV29B-300HE3_A/I

DIODE GEN PURP 300V 8A TO263AB

Vishay General Semiconductor - Diodes Division

2839 0.81
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 10 µA @ 300 V 300 V 8A -40°C ~ 150°C 1.25 V @ 8 A
XBS306P11R-G

Таблицы данных

XBS306P11R-G

XBS306P11R-G

SCHOTTKY BARRIER DIODE

Torex Semiconductor Ltd

3652 0.18
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 60 V 60 V 3A 150°C 750 mV @ 3 A
BYV29B-400HE3_A/I

Таблицы данных

BYV29B-400HE3_A/I

BYV29B-400HE3_A/I

DIODE GEN PURP 400V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3742 0.81
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 10 µA @ 400 V 400 V 8A -40°C ~ 150°C 1.25 V @ 8 A
CMG02(TE12L,Q,M)

Таблицы данных

CMG02(TE12L,Q,M)

CMG02(TE12L,Q,M)

DIODE GEN PURP 400V 2A M-FLAT

Toshiba Semiconductor and Storage

3754 0.18
- +

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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Last Time Buy Surface Mount - - 10 µA @ 400 V 400 V 2A -40°C ~ 150°C 1.1 V @ 2 A
FESB8ATHE3_A/I

Таблицы данных

FESB8ATHE3_A/I

FESB8ATHE3_A/I

DIODE GEN PURP 50V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3543 0.81
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 10 µA @ 50 V 50 V 8A -55°C ~ 150°C 950 mV @ 8 A
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